Renesas HZ11C3LTD-E

Overview

HZ11C3LTD-E from Renesas Electronics is a silicon planar Zener diode engineered for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 11.4–11.9 V at 0.5 mA test current, 80 Ω dynamic resistance, 400 mW power dissipation, and DO-35 glass package with navy-blue cathode band. It serves as a stable reference in low-drift power supplies and sensor biasing networks.

For engineers reviewing the HZ11C3LTD-E datasheet, HZ11C3LTD-E pinout, HZ11C3LTD-E application, or HZ11C3LTD-E equivalent, key selection criteria include zener voltage tolerance (±0.5 V), temperature coefficient (−0.02 %/°C at ~11.6 V), low noise performance (~1/3–1/10 of standard HZ series), and DO-35 mechanical compatibility in space-constrained PCB layouts.

Technical Context

This device operates as a two-terminal voltage reference using avalanche breakdown in a silicon planar junction. Its low dynamic impedance (80 Ω) ensures minimal output voltage variation under load changes, while its −0.02 %/°C temperature coefficient enables stable regulation across −55°C to +175°C ambient range.

The HZ11C3LTD-E is optimized for DC-biased applications requiring low reverse leakage (<1 μA at VR = 9.1 V) and low intrinsic noise-critical in high-gain amplifiers, ADC reference buffers, and precision instrumentation front-ends where supply ripple rejection and thermal drift directly impact measurement fidelity.

Key Specifications

Pinout & Package

Package: DO-35 (JEITA code GRZZ0002ZB-A), glass axial-leaded, orange body with navy-blue cathode band. Dimensions: φD = 2.0 mm, L = 26.0 mm, E = 4.2 mm. Mass: 0.13 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with 1N4742A and BZX55C12, the HZ11C3LTD-E offers tighter V_Z tolerance (±0.5 V vs. ±5%), lower noise, and superior temperature stability-making it preferred for metrology-grade and medical analog subsystems despite identical DO-35 footprint.

Availability

HZ11C3LTD-E is available at Aetrix Electronics and suitable for industrial sensor conditioning, high-gain instrumentation amplifier biasing, and PLC analog input modules requiring stable component supply with traceable sourcing and long-lifecycle support.

Supply support for HZ11C3LTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and IoT applications.

The HZ-L Series Zener diodes were designed specifically for low-noise, high-stability voltage reference applications in precision analog signal chains-addressing limitations of legacy HZ-series devices in medical, test equipment, and sensor interface designs.

FAQ

What is the exact zener voltage range for HZ11C3LTD-E at 0.5 mA test current?

The HZ11C3LTD-E has a guaranteed zener voltage range of 11.4 V to 11.9 V when tested at I_Z = 0.5 mA and T_a = 25°C. This ±0.5 V window reflects tighter binning than standard 5% tolerance Zeners and supports accurate 12 V rail referencing without external trimming. The value is measured with DC, per Renesas REJ03G0182-0300 Rev.3.00 specification.

Does HZ11C3LTD-E have a specified noise performance metric, and how does it compare to standard Zener diodes?

Yes-HZ11C3LTD-E is explicitly characterized as having approximately 1/3 to 1/10 the noise level of the legacy HZ series. While no absolute nV/√Hz value is published, this reduction is achieved via optimized planar junction processing and low-impurity silicon. In practice, this translates to measurable improvement in SNR for high-gain amplifier stages where HZ11C3LTD-E replaces generic Zeners like 1N4742A.

What is the maximum allowable reverse voltage (V_R) before leakage exceeds 1 μA for HZ11C3LTD-E?

Per the Electrical Characteristics table in REJ03G0182-0300, the HZ11C3LTD-E guarantees reverse leakage current I_R ≤ 1 μA when reverse voltage V_R is held at 9.1 V. This threshold is fixed across the HZ-L family and represents the maximum safe reverse bias below which leakage remains within specification-critical for high-impedance bias networks.

Is HZ11C3LTD-E qualified for automotive applications, and what quality grade does it carry?

No-HZ11C3LTD-E is classified as "Standard" grade per Renesas quality grading (Section 7 of REJ03G0182-0300), intended for office equipment, communications gear, audio/video, and industrial robots-not transportation or safety-critical systems. It is not AEC-Q200 qualified, and Renesas explicitly prohibits its use in automotive ECUs or safety-related functions without written consent.

Can HZ11C3LTD-E be used in surface-mount designs, or is it strictly through-hole?

HZ11C3LTD-E is exclusively a through-hole device in DO-35 axial glass package (JEITA code GRZZ0002ZB-A). It has no SMD variant. For surface-mount equivalents, Renesas does not offer an SMT version of the HZ-L series; designers must use alternative families (e.g., RZM series) or adapt the DO-35 into SMT-compatible carriers-though thermal and mechanical reliability may be compromised.