Renesas HZ12B1LTD-E

Overview

HZ12B1LTD-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 12.4–12.9 V, 400 mW power dissipation, 80 Ω dynamic impedance at 0.5 mA, and DO-35 glass package with navy-blue cathode band. It serves as a stable reference in low-drift power supplies and sensor biasing networks.

For engineers reviewing the HZ12B1LTD-E datasheet, HZ12B1LTD-E pinout, HZ12B1LTD-E application, or HZ12B1LTD-E equivalent, this device is selected for noise-sensitive stabilization where zener temperature coefficient (−0.02 to −0.04 %/°C), low leakage (<1 μA at VR = 10.5 V), and tight VZ tolerance are critical design constraints.

Technical Context

This Zener diode operates in reverse breakdown mode with DC-tested zener voltage specification (12.4–12.9 V at IZ = 0.5 mA) and exhibits low dynamic resistance (80 Ω max) to minimize output impedance variation under load transients. Its silicon planar construction ensures consistent junction characteristics and reproducible noise performance.

The device is rated for 400 mW power dissipation at 25°C ambient, with derating to zero at 175°C junction temperature, and supports storage across −55 to +175°C. Its DO-35 package enables through-hole mounting on standard PCBs with 2.5 mm lead spacing and 0.5 mm lead diameter.

Key Specifications

Pinout & Package

DO-35 glass axial package with 2-terminal configuration: leads extend symmetrically from opposite ends of cylindrical body; cathode identified by navy-blue band; body color is orange; mass ≈ 0.13 g; lead diameter 0.5 mm; overall length 26.0 mm; lead spacing 4.2 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with 1N4742A and BZX85C12, HZ12B1LTD-E delivers superior voltage stability (±2% vs. ±5%), lower noise (1/3–1/10 of HZ series), and tighter thermal drift control-making it optimal for metrology-grade references despite its lower power rating.

Availability

HZ12B1LTD-E is available at Aetrix Electronics and suitable for instrumentation reference, industrial sensor biasing, low-power analog front-end, and medical diagnostic signal conditioning requiring stable component supply and traceable sourcing.

Supply support for HZ12B1LTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

HZ12B1LTD-E belongs to the HZ-L Series of low-noise silicon planar Zener diodes, designed specifically for precision voltage reference and stabilization in noise-critical analog systems where conventional Zeners introduce unacceptable signal degradation.

FAQ

What is the zener voltage range specified for HZ12B1LTD-E?

The HZ12B1LTD-E has a guaranteed zener voltage range of 12.4 V to 12.9 V when tested at 0.5 mA DC current, per Renesas REJ03G0182-0300 Rev.3.00. This ±2% tolerance enables precise reference design without external trimming. The value is measured under strictly controlled DC conditions and does not include AC or transient effects. HZ12B1LTD-E maintains this specification across its qualified operating temperature range.

Is HZ12B1LTD-E suitable for surface-mount assembly?

No, HZ12B1LTD-E uses a DO-35 axial glass package with 2.5 mm lead spacing and is designed exclusively for through-hole mounting. It is not compatible with reflow or wave soldering processes used for SMT. For surface-mount alternatives, Renesas offers other families such as the UDZS series, but HZ12B1LTD-E itself requires manual or automated axial insertion and axial-wave soldering. Always verify board land patterns against the DO-35 mechanical drawing in the HZ-L datasheet.

What is the maximum reverse leakage current for HZ12B1LTD-E?

The maximum reverse leakage current for HZ12B1LTD-E is 1 μA at VR = 10.5 V and Ta = 25°C, as specified in the Electrical Characteristics table on page 3 of the Renesas datasheet REJ03G0182-0300. This low IR minimizes error current in high-impedance reference nodes and supports accurate biasing in sensor interfaces. Leakage increases with temperature but remains below 10 μA up to 100°C ambient under rated conditions.

Does HZ12B1LTD-E have a specified noise performance metric?

Yes, the HZ-L Series-including HZ12B1LTD-E-is explicitly characterized for low noise: its diode noise level is approximately 1/3 to 1/10 that of the legacy HZ series, as stated in the Features section of the Renesas datasheet. While no quantitative spectral density (nV/√Hz) is provided, this comparative claim is based on standardized measurement methodology and confirms HZ12B1LTD-E's suitability for audio, instrumentation, and precision analog applications where zener noise limits system resolution.

What is the thermal resistance junction-to-ambient for HZ12B1LTD-E?

The datasheet does not specify an explicit junction-to-ambient thermal resistance (θJA) for HZ12B1LTD-E. Instead, Renesas provides the derating curve in Figure 3 (Page 4), showing power dissipation drops linearly from 400 mW at 25°C ambient to 0 mW at 175°C. From this, θJA can be inferred as approximately 375°C/W (ΔT = 150°C ÷ 0.4 W), assuming natural convection on a standard FR-4 PCB with 10 mm lead length. Actual θJA depends heavily on PCB copper area and airflow; no fixed value is guaranteed across all layouts.