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Renesas HZ12B3-E

Part No.:
HZ12B3-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixHZ12B3-E.pdf
Description:
DIODE ZENER 0.5W
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:10,000

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Product details

Overview

HZ12B3-E from Renesas is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized DC supplies, featuring a nominal zener voltage of 13.8–14.3 V at 5 mA, 500 mW power dissipation, and 9.5 Ω dynamic impedance - used in reference voltage generation, overvoltage protection, and biasing circuits for analog front-ends.

For engineers reviewing the HZ12B3-E datasheet, HZ12B3-E pinout, HZ12B3-E application, or HZ12B3-E equivalent, key selection criteria include verified zener voltage tolerance (±0.5 V), DO-35 package thermal limits (Tj = 175°C), reverse leakage (<1 µA at VR = 11.4 V), and temperature coefficient behavior across operating ambient range.

Technical Context

This discrete Zener diode operates in reverse breakdown mode with DC-tested characteristics; its 13.8–14.3 V zener voltage is specified at IZ = 5 mA, with dynamic resistance measured under identical conditions. The device exhibits a positive temperature coefficient near +0.04 %/°C per Figure 2, consistent with mid-voltage Zener devices in the HZ series.

Absolutely rated for 500 mW at Ta = 25°C, derating follows a linear curve to zero at 150°C (per Fig.3); junction-to-ambient thermal resistance is ~300 K/W in free-air DO-35 mounting. Storage temperature spans −55 to +175°C, matching industrial-grade reliability requirements.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 13.8–14.3 V at IZ = 5 mA - defines stable regulation point for feedback references or clamp thresholds.
Power Dissipation (Pd) 500 mW at Ta = 25°C - sets maximum continuous DC power handling before thermal shutdown risk.
Dynamic Resistance (rd) 9.5 Ω max at IZ = 5 mA - determines output impedance and load regulation sensitivity in shunt regulator designs.
Reverse Leakage (IR) ≤1 µA at VR = 11.4 V - ensures minimal quiescent current in standby or high-impedance sensing nodes.
Junction Temperature (Tj) 175°C max - enables operation in sealed enclosures or near heat-generating components without derating failure.
Package DO-35 (JEITA GRZZ0002ZB-A) - standard axial glass-body package with cathode band marking, compatible with wave soldering and manual prototyping.

Pinout & Package

DO-35 glass axial package with cathode band marking; total mass ≈ 0.13 g, body diameter φD = 2.0 mm (nom), length L = 26.0 mm (min), lead spacing E = 4.2 mm (nom).

Pin/Terminal Circuit Role Design Meaning
1 (banded end) Cathode Connected to regulated output node; reverse-biased terminal where controlled breakdown occurs.
2 (non-banded end) Anode Connected to ground or lower-potential rail; completes current path during zener conduction.

Key Features

Feature Design Value
Low zener impedance 9.5 Ω max ensures tight voltage regulation under varying load currents in shunt configurations.
Stable temperature coefficient +0.04 %/°C typical minimizes drift in precision references across −40 to +85°C ambient ranges.
Controlled leakage current ≤1 µA at 80% VZ enables use in ultra-low-power monitoring circuits without degrading source impedance.
Robust thermal rating 175°C junction limit supports deployment in automotive under-hood or industrial control environments.

Applications

Voltage Reference Generator Overvoltage Clamp Circuit

Use Scenario: Providing stable 14 V reference for ADC voltage dividers or op-amp bias networks in sensor signal conditioning modules.

IC Role / Device Role / Timing Role: Passive voltage reference element establishing fixed potential against which analog signals are scaled or compared.

Use Value: Delivers ±0.5 V tolerance and <10 Ω output impedance, enabling 12-bit ADC accuracy without trimming resistors.

Use Scenario: Protecting microcontroller I/O pins from transient surges exceeding 14 V in 12 V automotive subsystems.

IC Role / Device Role / Timing Role: Shunt clamping device that conducts excess current when input exceeds VZ, diverting energy to ground.

Use Value: Activates within nanoseconds at 13.8 V, limiting peak voltage to ≤14.3 V while dissipating up to 500 mW safely.

DC Power Supply Regulator Current Source Bias Node

Use Scenario: Stabilizing unregulated 15 V rail to 14 V for analog ICs requiring clean, low-noise supply in instrumentation amplifiers.

IC Role / Device Role / Timing Role: Primary shunt regulator element maintaining constant voltage via controlled reverse conduction.

Use Value: Maintains regulation within ±1.5% over 1–10 mA load range due to low rd and tight VZ tolerance.

Use Scenario: Setting precise bias current for JFET or cascode amplifier stages using constant-current sink topology.

IC Role / Device Role / Timing Role: Voltage-setting element defining emitter/base potential in transistor-based current mirrors.

Use Value: Enables sub-1% current matching stability across temperature via predictable VZ drift and low IR.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N4742A Zener voltage 12 V ±5%, rd = 9 Ω, Pd = 1 W, DO-41 package - higher power but looser tolerance. Acceptable for non-critical 12 V clamping; unsuitable where 14 V reference or tight VZ spread is required. Select only if board layout accommodates larger DO-41 footprint and system tolerates ±0.6 V variation.
BZX55-C15 Zener voltage 15 V ±5%, rd = 30 Ω, Pd = 500 mW, DO-35 - same package but higher VZ and higher impedance. Valid for 15 V systems; introduces 1.2 V higher regulation point and reduced load regulation performance. Choose when 15 V target is acceptable and cost sensitivity outweighs need for lowest rd and tightest VZ bin.

Compared with HZ12B3-E, 1N4742A offers higher power but sacrifices voltage accuracy and package compatibility, while BZX55-C15 matches power and package but trades tighter VZ control and lower dynamic impedance for broader voltage tolerance.

Availability

HZ12B3-E is available at Aetrix Electronics and suitable for voltage reference generation, overvoltage protection, and DC power supply regulation requiring stable component supply, long-term obsolescence resilience, and traceable industrial-grade sourcing.

Supply support for HZ12B3-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog, and power devices for automotive, industrial, and IoT applications.

HZ12B3-E belongs to the HZ Series silicon planar Zener diodes - engineered for high-stability DC voltage regulation in space-constrained, thermally demanding environments where precision and reliability are critical.

FAQ

What is the exact zener voltage range for HZ12B3-E?

The HZ12B3-E has a guaranteed zener voltage range of 13.8 V to 14.3 V when tested at IZ = 5 mA and Ta = 25°C. This binning grade (B3) reflects tighter tolerance than A or C grades in the HZ12 family, making HZ12B3-E suitable for applications requiring tighter regulation without external trimming.

Is HZ12B3-E compatible with automated PCB assembly processes?

Yes, HZ12B3-E uses the standard DO-35 axial package with JEITA code GRZZ0002ZB-A and is qualified for wave soldering and reflow-compatible hand-soldering. Its glass body and 2.0 mm diameter allow reliable placement in automated axial insertion equipment, and the cathode band provides unambiguous orientation marking for AOI verification.

Does HZ12B3-E meet RoHS and REACH compliance requirements?

Yes, HZ12B3-E complies with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006 as confirmed by Renesas' material declarations. Lead content is below 1000 ppm, and no SVHC substances above threshold are present in the DO-35 package or silicon die of HZ12B3-E.

Can HZ12B3-E be used in series or parallel configurations?

HZ12B3-E is not recommended for parallel connection due to mismatched dynamic resistance causing current hogging. In series, it can achieve higher composite zener voltages, but thermal coupling must be ensured to avoid runaway - each HZ12B3-E must operate within its individual 500 mW limit and 175°C Tj rating.

What is the maximum allowable reverse voltage before breakdown for HZ12B3-E?

The HZ12B3-E begins controlled zener breakdown at approximately 13.8 V and fully regulates between 13.8 V and 14.3 V. Below 11.4 V, reverse leakage remains ≤1 µA; operation above 14.3 V is permissible only with current limiting to stay within 500 mW dissipation - sustained voltage >14.3 V without current control risks thermal failure of HZ12B3-E.

HZ12B3-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HZ12B3-E FAQ

1.How can I place an order for HZ12B3-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZ12B3-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZ12B3-E reliable?

The price and inventory of HZ12B3-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZ12B3-E is usually 5 days.

3.What payment methods are accepted for HZ12B3-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZ12B3-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZ12B3-E?

HZ12B3-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZ12B3-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZ12B3-E?

For technical support, including HZ12B3-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZ12B3-E requirements.

6.How does Aetrix verify that HZ12B3-E is sourced from the original manufacturer or authorized distributors?

All HZ12B3-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZ12B3-E meets industry standards.

7.What is the process for return or replacement of HZ12B3-E?

All HZ12B3-E units undergo pre-shipment inspection (PSI). If there is an issue with HZ12B3-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZ12B3-E part is unused and in its original packaging.

Return procedure for HZ12B3-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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