Renesas HZ12C2L-E

Overview

HZ12C2L-E from Renesas is a silicon planar Zener diode engineered for low-noise voltage regulation in precision analog circuits, with a nominal zener voltage of 13.5–14.0 V at 0.5 mA, dynamic resistance of 80 Ω, maximum power dissipation of 400 mW, and junction temperature rating up to 175°C - deployed in reference supplies for ADCs, sensor signal conditioning, and low-drift instrumentation amplifiers.

For engineers reviewing the HZ12C2L-E datasheet, HZ12C2L-E pinout, HZ12C2L-E application, or HZ12C2L-E equivalent, key selection criteria include verified low-noise performance (≈1/3–1/10 of standard HZ series), tight zener voltage tolerance, DO-35 package thermal derating behavior, and compatibility with low-current biasing schemes in noise-sensitive analog front-ends.

Technical Context

This device operates as a two-terminal shunt regulator using silicon planar junction technology optimized for reduced flicker and thermal noise generation. Its zener voltage is specified at 0.5 mA test current, with reverse leakage limited to 1 μA at VR = 10.5 V and dynamic impedance measured under DC conditions.

The HZ12C2L-E exhibits a negative temperature coefficient near 13.5–14.0 V range (≈−0.04 %/°C per Fig.2), enabling stable operation across −55°C to +175°C storage and up to 175°C junction temperature, with power derating beginning above 50°C ambient per Fig.3.

Key Specifications

Pinout & Package

DO-35 glass axial package with 2 mm diameter body, 26 mm overall length, and 0.5 mm lead diameter. Cathode identified by navy-blue band; anode is unmarked lead.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode reference applications.

Compared with 1N4742A and BZX85C13, the HZ12C2L-E delivers verified low-noise operation and tighter voltage tolerance in a smaller DO-35 package, making it uniquely suitable for space-constrained, high-fidelity analog reference designs where noise and stability are primary constraints.

Availability

HZ12C2L-E is available at Aetrix Electronics and suitable for high-precision ADC reference, low-drift sensor signal conditioning, and instrumentation amplifier V_REF applications requiring stable component supply, long-term parametric consistency, and traceable sourcing from Renesas.

Supply support for HZ12C2L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. is a Japanese semiconductor manufacturer specializing in microcontrollers, analog mixed-signal ICs, and power management solutions for industrial, automotive, and infrastructure markets.

The HZ-L Series is part of Renesas' precision analog portfolio, designed specifically for low-noise voltage reference applications where conventional Zener diodes introduce unacceptable signal integrity degradation.

FAQ

What is the zener voltage specification for HZ12C2L-E?

The HZ12C2L-E has a zener voltage range of 13.5 V to 14.0 V, tested at I_Z = 0.5 mA under DC conditions per Renesas REJ03G0182-0300 Rev.3.00. This tight 0.5 V window supports precision reference design without post-manufacturing trimming. The HZ12C2L-E achieves this specification using silicon planar junction technology optimized for low-parameter variation.

Does HZ12C2L-E have a documented low-noise characteristic?

Yes - Renesas explicitly states the HZ-L Series exhibits approximately 1/3 to 1/10 the noise level of the standard HZ series. This low-noise performance is achieved through process optimization and junction geometry, and is confirmed in the product's feature list on page 1 of REJ03G0182-0300. The HZ12C2L-E inherits this property as a member of the HZ-L family.

What is the maximum power dissipation and thermal derating behavior of HZ12C2L-E?

HZ12C2L-E has a maximum power dissipation of 400 mW at T_a = 25°C, with linear derating above 50°C ambient per Figure 3 in the datasheet. At 75°C ambient, usable power drops to ~300 mW; at 100°C, it falls to ~200 mW. This behavior is defined for the DO-35 package and must be applied in layout thermal design. The HZ12C2L-E junction temperature must remain ≤175°C under all operating conditions.

Is HZ12C2L-E compatible with automated PCB assembly processes?

Yes - the HZ12C2L-E uses the standard DO-35 axial package (JEITA GRZZ0002ZB-A) with 2.0 mm body diameter and 26 mm length, compatible with industry-standard axial component feeders and wave soldering profiles. Lead spacing is unconstrained, but board hole size should accommodate 0.5 mm leads. The HZ12C2L-E orange body and navy-blue cathode band support optical orientation verification during placement.

What is the reverse leakage current specification for HZ12C2L-E?

HZ12C2L-E specifies a maximum reverse leakage current (I_R) of 1 μA at V_R = 10.5 V, measured at T_a = 25°C. This low leakage supports high-impedance bias networks in precision analog circuits where even nanoamp-level errors degrade accuracy. The HZ12C2L-E maintains this spec across its rated storage temperature range of −55°C to +175°C.