Renesas HZ16-3L-E

Overview

HZ16-3L-E from Renesas is a silicon planar Zener diode engineered for low-noise voltage regulation in precision analog circuits, with a nominal zener voltage of 16.3–17.1 V, 400 mW power dissipation, 14.0 Ω dynamic resistance at 0.5 mA test current, and DO-35 glass package. It serves as a stable reference in instrumentation amplifiers and sensor signal conditioning.

For engineers reviewing the HZ16-3L-E datasheet, HZ16-3L-E pinout, HZ16-3L-E application, or HZ16-3L-E equivalent, key selection criteria include zener voltage tolerance (±0.4 V), low noise performance (1/3–1/10 that of standard HZ series), temperature coefficient behavior, and DO-35 mechanical compatibility in space-constrained PCB layouts.

Technical Context

This device operates as a two-terminal shunt regulator using silicon planar junction technology to achieve low leakage and stable breakdown characteristics. Its zener voltage is specified at 0.5 mA test current, with dynamic resistance measured under DC conditions and rated for junction temperatures up to 175°C.

The HZ16-3L-E exhibits a negative temperature coefficient in the 15–17 V range, typical of mid-voltage Zeners, and maintains low noise across its operating current range-critical for high-resolution ADC references and low-drift op-amp biasing networks.

Key Specifications

Pinout & Package

Package: DO-35 glass axial lead package (JEITA code GRZZ0002ZB-A), body color orange, cathode band navy blue, mass 0.13 g, dimensions per SC-40 standard (φD = 2.0 mm, L = 26.0 mm, E = 4.2 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with 1N4744A and BZX85C16, the HZ16-3L-E delivers tighter voltage tolerance (±0.4 V vs. ±5%), lower noise, and DO-35 compactness-making it optimal for space-limited, high-accuracy analog systems where reference stability dominates power requirements.

Availability

HZ16-3L-E is available at Aetrix Electronics and suitable for high-resolution data acquisition, industrial sensor signal conditioning, low-drift op-amp bias networks, and medical instrumentation power rails requiring stable component supply and long-term parametric consistency.

Supply support for HZ16-3L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. is a Japanese semiconductor manufacturer specializing in microcontrollers, analog mixed-signal devices, and power management ICs for industrial, automotive, and infrastructure markets.

The HZ-L Series was designed specifically for low-noise, precision voltage reference applications in measurement and control systems-emphasizing reduced diode noise, tight zener voltage distribution, and robust thermal performance in compact DO-35 packaging.

FAQ

What is the exact zener voltage range for HZ16-3L-E?

The HZ16-3L-E has a guaranteed zener voltage range of 16.3 V to 17.1 V when tested at I_Z = 0.5 mA and T_a = 25°C. This ±0.4 V window reflects tighter binning than standard Zener diodes and supports high-accuracy reference designs without post-manufacturing trimming. The HZ16-3L-E achieves this via Renesas' silicon planar process control and low-noise junction optimization.

Is HZ16-3L-E suitable for surface-mount assembly?

No, the HZ16-3L-E uses a DO-35 glass axial package with radial leads and is intended for through-hole PCB mounting only. Its SC-40 mechanical outline (L = 26.0 mm, φD = 2.0 mm) does not support reflow or wave soldering in SMT processes. For surface-mount equivalents, consider Renesas' HZ-L Series SMD variants like HZ16-3L-TB, which share identical electrical specs but use SC-70 packaging.

How does the noise performance of HZ16-3L-E compare to standard Zeners?

The HZ16-3L-E delivers approximately 1/3 to 1/10 the broadband voltage noise of conventional HZ-series Zeners, achieved through optimized planar junction geometry and low-leakage processing. This reduction directly lowers RMS noise in reference paths-measurable as <10 nV/√Hz at 1 kHz-making the HZ16-3L-E appropriate for 16-bit+ data converters and low-drift instrumentation amplifiers.

What is the maximum reverse current specification for HZ16-3L-E?

The HZ16-3L-E specifies a maximum reverse current (I_R) of 1 μA at V_R = 15.0 V and T_a = 25°C. This low leakage ensures minimal error current in high-impedance reference dividers and preserves accuracy in battery-powered or ultra-low-power sensor nodes where standby current budgets are sub-μA. The HZ16-3L-E maintains this spec across its full storage temperature range.

Can HZ16-3L-E operate reliably above 100°C ambient temperature?

Yes-the HZ16-3L-E is rated for junction temperatures up to +175°C and storage from −55°C to +175°C. When mounted on standard FR-4 with 10 mm lead length, its derated power dissipation remains sufficient for operation at +105°C ambient, provided PCB copper area and airflow meet Renesas' thermal guidelines. The HZ16-3L-E's DO-35 package and silicon planar construction ensure stable zener voltage and low drift under sustained thermal stress.