Renesas HZ20-1RE-E

Overview

HZ20-1RE-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 19.25 V (min 18.8 V, max 19.7 V), 400 mW power dissipation, 18 Ω dynamic impedance at 0.5 mA test current, and DO-35 glass axial package. It serves as a stable reference in low-drift power supplies and sensor biasing networks where noise suppression is critical.

For engineers reviewing the HZ20-1RE-E datasheet, HZ20-1RE-E pinout, HZ20-1RE-E application, or HZ20-1RE-E equivalent, this device is evaluated for use in high-stability analog references, low-noise LDO pre-regulation, and temperature-compensated voltage monitoring - with attention to its −0.04 %/°C temperature coefficient and 1 μA maximum reverse leakage at 15.2 V.

Technical Context

This Zener diode employs a planar diffusion structure on silicon to achieve low flicker noise and tight voltage tolerance across production lots. Its zener breakdown mechanism operates in the 5–38 V range, with HZ20-1RE-E specifically tuned for the 18.8–19.7 V band using controlled doping and junction geometry.

Thermal stability is enhanced by a low temperature coefficient (−0.04 %/°C) and junction-to-ambient thermal resistance of ~312.5 °C/W (calculated from 400 mW Pd and 125 °C ΔT). The DO-35 package supports hand-soldering and wave soldering per JEDEC J-STD-020, with cathode identification via navy-blue band.

Key Specifications

Pinout & Package

Package: DO-35 glass axial package with navy-blue cathode band; body color orange; mass 0.13 g; dimensions per JEITA SC-40 outline (L = 26.0 mm, φD = 2.0 mm, E = 4.2 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with HZ20-1RE-E, MMBZ5242B offers smaller footprint but lacks low-noise certification and precise 19.25 V targeting, while BZX55C20 provides higher power margin but introduces 39% higher impedance and undefined noise performance - making HZ20-1RE-E the sole option meeting simultaneous requirements for DO-35 compatibility, 19.25 V nominal, ≤18 Ω r_d, and verified low-noise operation.

Availability

HZ20-1RE-E is available at Aetrix Electronics and suitable for high-precision reference supplies, low-noise sensor biasing, and industrial temperature monitoring requiring stable component supply and long-term parametric consistency.

Supply support for HZ20-1RE-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for industrial, automotive, and infrastructure markets.

HZ20-1RE-E belongs to the HZ-L Series of low-noise silicon planar Zener diodes, designed specifically for precision voltage reference and stabilization in analog signal chains where noise and thermal drift critically impact measurement fidelity.

FAQ

What is the exact zener voltage range specified for HZ20-1RE-E?

The HZ20-1RE-E has a guaranteed zener voltage range of 18.8 V minimum to 19.7 V maximum when tested at I_Z = 0.5 mA and T_a = 25°C. This 0.9 V span reflects tight process control for mid-voltage analog references, and the typical value is 19.25 V. The specification is confirmed in Renesas document REJ03G0182-0300 Rev.3.00, Page 3.

Does HZ20-1RE-E have a documented noise performance specification?

Yes - the HZ-L Series, including HZ20-1RE-E, is explicitly characterized for low noise, with Renesas stating its noise level is approximately 1/3 to 1/10 that of the standard HZ series. This is achieved via optimized planar junction design and low-leakage processing, making HZ20-1RE-E suitable for applications where diode-generated noise directly impacts signal integrity.

What is the maximum reverse leakage current for HZ20-1RE-E, and at what voltage is it measured?

HZ20-1RE-E has a maximum reverse leakage current (I_R) of 1 μA, measured at V_R = 15.2 V and T_a = 25°C. This low leakage ensures minimal error in high-impedance bias networks and preserves battery life in portable instrumentation using HZ20-1RE-E as a reference source.

Is HZ20-1RE-E RoHS compliant and lead-free?

Yes - HZ20-1RE-E conforms to the EU RoHS Directive, as confirmed by Renesas' environmental compliance documentation. The DO-35 package uses lead-free glass and internal metallization, and the device carries no exemptions. Full material declarations are available upon request from Aetrix Electronics for traceability in regulated industries.

What is the thermal resistance and derating behavior of HZ20-1RE-E above 25°C ambient?

HZ20-1RE-E has a junction-to-ambient thermal resistance of approximately 312.5 °C/W, derived from its 400 mW rated power dissipation and 125 °C allowable temperature rise. Derating begins linearly above 25°C ambient, reaching zero power at 125°C case temperature - consistent with Figure 3 in Renesas REJ03G0182-0300. PCB copper area significantly improves actual thermal performance.