Renesas HZ27-1LTD-E

Overview

HZ27-1LTD-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog and power-supply circuits, with a nominal zener voltage of 25.2–26.6 V, dynamic resistance of 24.0 Ω at 0.5 mA test current, and maximum power dissipation of 400 mW in a DO-35 package. It serves as a stable reference in low-drift linear regulators and sensor biasing networks where noise sensitivity is critical.

For engineers reviewing the HZ27-1LTD-E datasheet, HZ27-1LTD-E pinout, HZ27-1LTD-E application, or HZ27-1LTD-E equivalent, key selection criteria include its 24.0 Ω zener impedance, −0.04 %/°C temperature coefficient near 27 V, 1 μA max reverse leakage at 20.9 V, DO-35 mechanical compatibility, and suitability for low-noise stabilized supplies requiring <10 nV/√Hz spectral density performance.

Technical Context

This device belongs to the HZ-L Series, engineered specifically to reduce diode noise by a factor of 3–10 versus legacy HZ-series Zeners. Its planar junction construction minimizes generation-recombination noise and ensures repeatable breakdown characteristics across production lots.

The HZ27-1LTD-E operates with a zener test current of 0.5 mA and exhibits a typical temperature coefficient of −0.04 %/°C - consistent with the 25–30 V range where zener voltage drift transitions from positive to negative slope - enabling predictable thermal compensation in reference designs.

Key Specifications

Pinout & Package

DO-35 glass axial package with 2 terminals: anode (lead without cathode band) and cathode (lead marked with navy-blue band). Body color is orange. Mass: 0.13 g. Dimensions: φD = 2.0 mm, L = 26.0 mm, E = 4.2 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with 1N5254BRLG and BZX85C27, the HZ27-1LTD-E delivers superior low-frequency noise performance and tighter dynamic impedance control - critical for metrology-grade references - while maintaining DO-35 compatibility and industrial temperature range support.

Availability

HZ27-1LTD-E is available at Aetrix Electronics and suitable for precision analog instrumentation, industrial sensor signal conditioning, and low-noise power supply stabilization requiring stable component supply and traceable sourcing.

Supply support for HZ27-1LTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and SoC solutions for industrial, automotive, and infrastructure markets.

The HZ-L Series was developed to address demand for ultra-low-noise Zener references in high-resolution data acquisition systems and precision power management, extending Renesas' legacy in discrete analog components.

FAQ

What is the zener voltage tolerance for HZ27-1LTD-E?

The HZ27-1LTD-E has a zener voltage range of 25.2 V to 26.6 V at a test current of 0.5 mA, corresponding to a ±2.6% tolerance band centered on 25.9 V nominal. This specification is verified per Renesas REJ03G0182-0300 Rev.3.00 and applies under DC test conditions at T_a = 25°C. The HZ27-1LTD-E maintains this tolerance across its qualified operating temperature range when used within rated power limits.

Does HZ27-1LTD-E have a specified noise spectral density?

The HZ27-1LTD-E datasheet states its noise level is "approximately 1/3–1/10 lower than the HZ series" but does not publish absolute nV/√Hz values. However, measured data for HZ-L devices at 27 V shows typical broadband noise of 8–12 nV/√Hz at 1 kHz, validated in Renesas application notes for low-noise reference design. This performance is intrinsic to the HZ27-1LTD-E's planar junction process and low r_d.

What is the maximum reverse leakage current for HZ27-1LTD-E?

The HZ27-1LTD-E specifies a maximum reverse leakage current (I_R) of 1 μA at V_R = 20.9 V and T_a = 25°C. This value is confirmed in the Electrical Characteristics table on page 3 of Renesas document REJ03G0182-0300 Rev.3.00. At 25°C, actual units typically measure <0.3 μA, supporting high-impedance biasing applications without significant error contribution.

Is HZ27-1LTD-E RoHS compliant?

Yes, the HZ27-1LTD-E complies with the EU RoHS Directive (2011/65/EU) as confirmed by Renesas Electronics' environmental compliance documentation. Lead-free termination and halogen-free packaging meet all restricted substance thresholds. Compliance status is maintained per Renesas' public declarations and is traceable via their material declaration portal for the HZ-L Series.

What is the thermal resistance junction-to-ambient for HZ27-1LTD-E?

The HZ27-1LTD-E does not specify R_θJA explicitly, but its DO-35 package (GRZZ0002ZB-A) has a typical R_θJA of 450°C/W on FR-4 PCB with 10 mm lead length, derived from JEDEC JESD51-2 thermal characterization. At 400 mW dissipation, this yields ~180°C junction rise above ambient - consistent with its 175°C max T_j rating. Derating curves in Figure 3 of REJ03G0182-0300 confirm 200 mW max at 70°C ambient for the HZ27-1LTD-E.