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Renesas HZ2ALLTD-E
- Part No.:
- HZ2ALLTD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZ2ALLTD-E.pdf
- Description:
- DIODE ZENER 0.25W
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Inventory:12,075
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Product details
Overview
HZ2ALLTD-E from Renesas Electronics is a silicon planar Zener diode optimized for hard-knee, low-noise voltage reference applications at low current (IZ = 0.001–0.5 mA), with nominal Zener voltage 1.8 V (min 1.6 V, max 2.0 V), dynamic impedance ZZT ≤ 350 Ω at IZT = 0.5 mA, and temperature coefficient γZ ≈ –0.03 mV/°C - used in precision analog front-ends and sensor biasing circuits.
For engineers reviewing the HZ2ALLTD-E datasheet, HZ2ALLTD-E pinout, HZ2ALLTD-E application, or HZ2ALLTD-E equivalent, this page delivers verified electrical specs, DO-35 package details, low-current Zener behavior, thermal derating curves, and direct alternatives for stable sub-2V reference design.
Technical Context
The HZ2ALLTD-E operates as a two-terminal shunt voltage reference with sharp breakdown knee below 1 µA, enabling stable regulation even in ultra-low-power sensor signal conditioning. Its semi-logarithmic VZ–IZ curve ensures predictable conduction onset across temperature.
Designed for DC-biased operation only, it exhibits low dynamic impedance (350 Ω typical at 0.5 mA) and minimal noise - approximately one-tenth that of conventional Zeners - due to optimized planar junction structure and low leakage (<100 nA at VR = 0.5 V).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 1.6–2.0 V at IZ = 0.5 mA - defines usable reference range for 1.8 V nominal biasing in analog sensor interfaces. |
| Dynamic Impedance (ZZT) | ≤350 Ω at IZT = 0.5 mA - ensures minimal output voltage shift under load variation in low-current references. |
| Reverse Current (IR) | ≤100 nA at VR = 0.5 V - enables high-impedance node stabilization without significant leakage error. |
| Temperature Coefficient (γZ) | ≈ –0.03 mV/°C - provides near-zero drift over industrial temperature range when paired with compensating circuitry. |
| Power Dissipation (Pd) | 250 mW at Ta = 25°C - supports continuous operation up to ~140°C ambient with linear derating per Fig.3. |
| Junction Temperature (Tj) | 175°C maximum - allows reliable use in thermally constrained PCB layouts with adequate copper area. |
Pinout & Package
Package: DO-35 glass axial leaded package (JEITA code GRZZ0002ZB-A), body color Verdure, cathode identified by navy-blue band. Mass: 0.13 g. Dimensions: φD = 2.0 mm max, L = 26.0 mm min, E = 4.2 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Reference output node | Connected to regulated voltage rail; polarity must be observed to avoid forward conduction. |
| 2 (Anode) | Ground/reference return | Typically tied to system ground or bias current source return; establishes reference potential. |
Key Features
| Feature | Design Value |
|---|---|
| Hard-knee breakdown | VZ transition occurs sharply between 1 nA and 0.05 mA - eliminates ambiguity in turn-on threshold for low-power wake-up circuits. |
| Low-noise operation | Approximately 1/10 noise of standard Zeners - critical for high-resolution ADC reference buffers and microphone preamp biasing. |
| Semi-logarithmic VZ–IZ curve | Linear in log(IZ) domain from 1 nA to 1 mA - simplifies modeling and compensation in SPICE simulations. |
| Low temperature coefficient | γZ ≈ –0.03 mV/°C - reduces need for external trimming in battery-powered portable instrumentation. |
Applications
| Portable Gas Sensor Biasing | Thermistor Reference Circuit |
|---|---|
Use Scenario: Low-power electrochemical gas sensor requiring stable 1.8 V bias at <1 µA quiescent current. IC Role / Device Role / Timing Role: Shunt voltage reference establishing precise bias point for sensor electrode drive. Use Value: Hard-knee behavior ensures repeatable turn-on at microamp-level currents, minimizing sensor startup delay and offset drift. |
Use Scenario: Analog front-end for NTC thermistor network in handheld medical thermometer. IC Role / Device Role / Timing Role: Low-noise, low-drift voltage reference for ratiometric measurement against ADC reference. Use Value: 10× lower noise vs. standard Zeners improves effective resolution by ≥1 LSB in 12-bit systems. |
| IoT Node Voltage Monitor | Low-Power RTC Backup Supply |
Use Scenario: Battery voltage supervisor in BLE beacon with 2.0 V brown-out detection threshold. IC Role / Device Role / Timing Role: Precision shunt reference feeding comparator input for accurate undervoltage lockout. Use Value: Tight 1.6–2.0 V VZ tolerance enables ±2.8% detection window without calibration. |
Use Scenario: Standby voltage reference for real-time clock IC during main power loss (coin-cell powered). IC Role / Device Role / Timing Role: Ultra-low-leakage Zener maintaining stable 1.8 V for RTC oscillator biasing. Use Value: IR ≤100 nA at 0.5 V minimizes coin-cell discharge, extending backup runtime beyond 3 years. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5221B (ON Semiconductor) | Zener voltage 2.4 V (±5%), ZZT = 600 Ω at 20 mA - higher voltage, higher impedance, rated for 500 mW. | Requires higher bias current; unsuitable for sub-µA nodes; better for higher-power regulator feedback. | Select only if 2.4 V reference and >1 mA operating current are acceptable; not drop-in for HZ2ALLTD-E's low-IZ use case. |
| BZX55C1V8 (Vishay) | Zener voltage 1.8 V (±5%), ZZT = 100 Ω at 5 mA - tighter VZ tolerance but requires 5× higher test current; IR = 50 µA at 1 V. | Higher leakage limits use in nanoamp-sensor biasing; better suited for general-purpose 5 mA reference rails. | Prefer where higher bias current is available and leakage <50 µA is acceptable; not suitable for µA-scale precision nodes. |
Compared with 1N5221B and BZX55C1V8, the HZ2ALLTD-E uniquely supports stable 1.8 V reference operation down to 1 nA while maintaining low noise and near-zero TC - making it irreplaceable in ultra-low-power analog sensing where other Zeners fail to regulate.
Availability
HZ2ALLTD-E is available at Aetrix Electronics and suitable for portable gas sensors, thermistor-based temperature monitors, IoT voltage supervisors, and RTC backup circuits requiring stable component supply with traceable Renesas manufacturing lineage.
Supply support for HZ2ALLTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and IoT applications.
The HZ-LL Series was designed specifically for ultra-low-current, low-noise voltage reference applications - targeting precision analog signal chains where conventional Zeners exhibit excessive noise and soft knee behavior.
FAQ
What is the guaranteed Zener voltage range for HZ2ALLTD-E at 0.5 mA?
The HZ2ALLTD-E has a specified Zener voltage range of 1.6 V minimum to 2.0 V maximum when tested at IZ = 0.5 mA and Ta = 25°C. This 0.4 V span reflects process-controlled tight distribution for 1.8 V nominal operation, enabling consistent performance in uncalibrated analog sensor interfaces without trimming.
Does HZ2ALLTD-E support AC-coupled or transient applications?
No - the HZ2ALLTD-E is characterized and rated for DC operation only. Its specifications, including dynamic impedance and noise, apply strictly under steady-state DC bias. Transient or AC signal injection may cause unpredictable junction behavior and is outside its validated operating conditions per Renesas REJ03G0183-0300 Rev.3.00.
How does the HZ2ALLTD-E achieve lower noise than standard Zener diodes?
The HZ2ALLTD-E achieves approximately one-tenth the noise of conventional Zeners through optimized silicon planar junction geometry and controlled doping profiles, which suppress avalanche noise mechanisms dominant below 5 mA. This is confirmed in Renesas' characterization data on page 1 of REJ03G0183-0300.
Is HZ2ALLTD-E suitable for automotive applications?
No - the HZ2ALLTD-E is classified as a Standard-grade Renesas product intended for office equipment, communications gear, and industrial robots. It is not qualified for automotive use (AEC-Q101), nor rated for extended temperature ranges beyond –55°C to +175°C junction, and lacks automotive-specific reliability testing.
What is the maximum allowable reverse voltage before breakdown for HZ2ALLTD-E?
The HZ2ALLTD-E does not specify a distinct "reverse breakdown threshold" separate from its Zener voltage. Per datasheet Electrical Characteristics, it begins regulating at ~1.6 V and fully enters breakdown within its 1.6–2.0 V VZ range at IZ = 0.5 mA. Applying >2.0 V continuously risks exceeding Pd limits unless current is strictly limited.
HZ2ALLTD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZ2ALLTD-E FAQ
1.How can I place an order for HZ2ALLTD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZ2ALLTD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZ2ALLTD-E reliable?
The price and inventory of HZ2ALLTD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZ2ALLTD-E is usually 5 days.
3.What payment methods are accepted for HZ2ALLTD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZ2ALLTD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZ2ALLTD-E?
HZ2ALLTD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZ2ALLTD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZ2ALLTD-E?
For technical support, including HZ2ALLTD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZ2ALLTD-E requirements.
6.How does Aetrix verify that HZ2ALLTD-E is sourced from the original manufacturer or authorized distributors?
All HZ2ALLTD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZ2ALLTD-E meets industry standards.
7.What is the process for return or replacement of HZ2ALLTD-E?
All HZ2ALLTD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZ2ALLTD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZ2ALLTD-E part is unused and in its original packaging.
Return procedure for HZ2ALLTD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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