Renesas HZ2B3JTA-E

Overview

HZ2B3JTA-E from Renesas is a silicon planar Zener diode engineered for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 5.7 V ±0.3 V, 400 mW power dissipation, 80 Ω dynamic impedance at 0.5 mA, and DO-35 glass package with navy-blue cathode band. It serves as a stable reference in low-drift power supplies and sensor biasing networks.

For engineers reviewing the HZ2B3JTA-E datasheet, HZ2B3JTA-E pinout, HZ2B3JTA-E application, or HZ2B3JTA-E equivalent, key selection criteria include zener voltage tolerance (±0.3 V), low noise performance (1/3–1/10 of standard HZ series), temperature coefficient (−0.04 %/°C typical), and DO-35 mechanical compatibility for through-hole PCB assembly.

Technical Context

This device operates as a two-terminal shunt regulator with DC-tested zener characteristics, optimized for low-noise applications where thermal drift and broadband noise must be minimized. Its junction temperature rating of 175°C and storage range of −55°C to +175°C support operation in industrial ambient conditions.

The HZ2B3JTA-E belongs to the HZ-L Series, distinguished by reduced diode noise versus legacy HZ parts, lower leakage current, and tighter zener voltage distribution across the 5.2–38 V range. It uses a silicon planar construction with controlled doping to achieve stable breakdown behavior under fixed reverse-bias conditions.

Key Specifications

Pinout & Package

Package: DO-35 glass axial lead package (JEITA code GRZZ0002ZB-A), orange body color, navy-blue cathode band, 2.0 mm diameter × 26.0 mm length, 0.13 g mass.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode reference applications.

Compared with 1N4734A and BZX55-C5V6, the HZ2B3JTA-E offers superior voltage accuracy (±0.3 V vs. ±5%), verified low-noise operation, and tighter dynamic impedance control-making it preferred for metrology-grade and audio-critical applications despite its 400 mW limit.

Availability

HZ2B3JTA-E is available at Aetrix Electronics and suitable for industrial power supply reference, precision sensor biasing, and portable calibration equipment requiring stable component supply with guaranteed long-term continuity.

Supply support for HZ2B3JTA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The HZ-L Series Zener diodes were developed specifically for low-noise, high-stability voltage reference applications in precision analog systems-emphasizing reduced broadband noise, tight V_Z binning, and predictable temperature behavior.

FAQ

What is the exact zener voltage range specified for HZ2B3JTA-E?

The HZ2B3JTA-E has a guaranteed zener voltage range of 5.7 V minimum to 6.0 V maximum when tested at I_Z = 0.5 mA and T_a = 25°C. This ±0.3 V tolerance is tighter than standard Zener diodes and supports high-accuracy reference design without external trimming. The HZ2B3JTA-E achieves this via binning within the HZ-L Series' low-noise silicon planar process.

Does HZ2B3JTA-E meet low-noise requirements for audio circuitry?

Yes, the HZ2B3JTA-E is explicitly characterized for low-noise operation, with diode noise approximately 1/3 to 1/10 that of the legacy HZ series. Its silicon planar construction and optimized doping profile minimize avalanche noise, making it suitable for microphone preamplifier biasing and high-SNR analog signal chains where reference noise directly impacts system performance. The HZ2B3JTA-E datasheet confirms this advantage in its Features section.

What is the maximum allowable junction temperature for HZ2B3JTA-E?

The absolute maximum junction temperature for HZ2B3JTA-E is 175°C, as specified in the Absolute Maximum Ratings table. This allows operation in high-ambient industrial environments when derated according to the power dissipation vs. ambient temperature curve on page 4 of the datasheet. Thermal design must ensure the HZ2B3JTA-E remains within this limit under worst-case power dissipation (400 mW at 25°C ambient).

Is HZ2B3JTA-E supplied in tape-and-reel or bulk packaging?

HZ2B3JTA-E is supplied in bulk packaging per the ordering information in the HZ-L Series datasheet (REJ03G0182-0300). The part uses DO-35 axial leads and is not offered in tape-and-reel format by Renesas. For automated assembly, customers should verify compatibility with axial-lead feeders or consider manual placement. The HZ2B3JTA-E package code GRZZ0002ZB-A corresponds to the DO-35 variant.

How does the temperature coefficient of HZ2B3JTA-E compare to generic 5.6 V Zeners?

The HZ2B3JTA-E exhibits a typical temperature coefficient (γ_Z) of −0.04 %/°C, significantly tighter than generic 5.6 V Zeners like the 1N4734A (±0.05 %/°C) or BZX55-C5V6 (±0.1 %/°C). This improved stability is confirmed in Figure 2 of the HZ-L Series datasheet and directly supports applications requiring <0.05% FS drift over industrial temperature ranges. The HZ2B3JTA-E achieves this via process-controlled junction design.