Renesas HZ2C2JTA-E

Overview

HZ2C2JTA-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, with a nominal zener voltage of 6.3 V (min 6.0 V, max 6.6 V), dynamic resistance of 60 Ω at 0.5 mA test current, maximum power dissipation of 400 mW, and junction temperature rating up to 175°C. It is used in stabilized power supplies and reference voltage sources where noise suppression and thermal stability are critical.

For engineers reviewing the HZ2C2JTA-E datasheet, HZ2C2JTA-E pinout, HZ2C2JTA-E application, or HZ2C2JTA-E equivalent, key selection criteria include its low-noise performance (≈1/3–1/10 of standard HZ series), DO-35 package compatibility, 60 Ω zener impedance at 0.5 mA, and −0.04 %/°C temperature coefficient near 6.3 V - all verified per Renesas REJ03G0182-0300 Rev.3.00.

Technical Context

The HZ2C2JTA-E belongs to the HZ-L Series, engineered specifically to reduce diode-generated noise in sensitive analog signal chains. Its silicon planar construction ensures consistent breakdown characteristics and low leakage current (<1 μA at VR = 2.0 V).

It operates with a defined zener test current of 0.5 mA, exhibits a dynamic resistance of 60 Ω under that condition, and maintains stable regulation across ambient temperatures from −55°C to +175°C, supported by a low temperature coefficient of approximately −0.04 %/°C at its nominal 6.3 V rating.

Key Specifications

Pinout & Package

Package: DO-35 (JEITA code GRZZ0002ZB-A), glass axial leaded package with orange body and navy-blue cathode band. Mass: 0.13 g. Dimensions: φD = 2.0 mm, L = 26.0 mm, E = 4.2 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Compared with 1N4735A and BZX55C6V2, the HZ2C2JTA-E delivers superior low-noise performance and tighter temperature coefficient at low test current (0.5 mA), making it uniquely suited for precision analog reference designs where current budget and spectral purity are constrained.

Availability

HZ2C2JTA-E is available at Aetrix Electronics and suitable for stabilized power supplies, precision analog references, industrial sensor excitation, and low-noise instrumentation requiring stable component supply with traceable sourcing and long-term lifecycle support.

Supply support for HZ2C2JTA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure applications.

The HZ-L Series was developed by Renesas to address demand for ultra-low-noise Zener diodes in high-fidelity analog signal conditioning and precision voltage reference circuits - targeting applications where conventional Zeners introduce unacceptable noise floor elevation.

FAQ

What is the exact zener voltage range for HZ2C2JTA-E?

The HZ2C2JTA-E has a guaranteed zener voltage range of 6.0 V minimum to 6.6 V maximum when tested at I_Z = 0.5 mA and T_a = 25°C, per Renesas REJ03G0182-0300 Rev.3.00. This 0.6 V span reflects tight process control for precision reference use, and the typical value is 6.3 V. The HZ2C2JTA-E is part of the HZ-L family's "C2" variant group, which consistently targets this mid-range specification.

Does HZ2C2JTA-E have a specified noise performance metric?

Yes - Renesas specifies that the HZ-L Series, including HZ2C2JTA-E, achieves diode noise levels approximately 1/3 to 1/10 that of the legacy HZ series. This improvement is achieved through optimized silicon planar processing and is validated in low-frequency analog reference applications. The HZ2C2JTA-E inherits this low-noise characteristic as a core feature of its product identity.

What is the maximum power dissipation and derating behavior of HZ2C2JTA-E?

HZ2C2JTA-E has a maximum power dissipation of 400 mW at T_a = 25°C. Derating begins linearly above 25°C, reaching zero dissipation at 175°C junction temperature. The device's DO-35 package and 175°C T_j rating enable robust thermal performance in confined spaces. Full derating curve is shown in Figure 3 of the HZ2C2JTA-E datasheet (REJ03G0182-0300).

Is HZ2C2JTA-E compatible with standard DO-35 footprint layouts?

Yes - HZ2C2JTA-E uses the industry-standard DO-35 package (JEITA code GRZZ0002ZB-A) with 2.0 mm diameter body, 26.0 mm length, and 4.2 mm lead spacing. Its cathode band is navy blue, and body color is orange, matching mechanical and soldering requirements of legacy DO-35 designs. No PCB layout changes are needed when replacing functionally similar DO-35 Zeners.

What is the temperature coefficient behavior of HZ2C2JTA-E near its nominal voltage?

HZ2C2JTA-E exhibits a temperature coefficient (γ_Z) of approximately −0.04 %/°C near its nominal 6.3 V zener voltage, as confirmed by Figure 2 in the official datasheet. This low, predictable drift enables stable reference performance across −40°C to +125°C ambient ranges without external compensation. The HZ2C2JTA-E's γ_Z is significantly better than generic 6.2 V Zeners, which often exceed ±0.08 %/°C.