Renesas HZ30-1TD-P-E

Overview

HZ30-1TD-P-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 28.2–29.6 V at 0.5 mA test current, 400 mW power dissipation, 27 Ω dynamic impedance, and DO-35 glass package with navy-blue cathode band.

For engineers reviewing the HZ30-1TD-P-E datasheet, HZ30-1TD-P-E pinout, HZ30-1TD-P-E application, or HZ30-1TD-P-E equivalent, key selection criteria include zener voltage tolerance (±1.4 V), low noise performance (1/3–1/10 of standard HZ series), temperature coefficient (−0.04 %/°C typical), and suitability for stabilized reference supplies in instrumentation and sensor signal conditioning.

Technical Context

This device operates as a two-terminal voltage reference using avalanche breakdown in a silicon planar junction, with low leakage current (<1 μA at VR = 20.2 V) and tightly controlled zener voltage distribution across production lots. Its DO-35 package enables through-hole mounting on PCBs with thermal relief design per JEITA GRZZ0002ZB-A.

The HZ30-1TD-P-E exhibits a negative temperature coefficient of −0.04 %/°C (≈ −11.3 mV/°C), making it suitable for temperature-compensated references when paired with positive-TC components. It is rated for junction temperatures up to 175°C and storage from −55°C to +175°C.

Key Specifications

Pinout & Package

DO-35 glass axial package (JEITA code GRZZ0002ZB-A, Renesas code SC-40), 2.0 mm diameter × 26.0 mm length, orange body with navy-blue cathode band. Mass: 0.13 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with 1N5256B and BZX85C30, the HZ30-1TD-P-E delivers superior noise suppression, tighter voltage tolerance (±1.4 V vs. ±1.5 V), lower dynamic impedance, and verified low-noise specification - critical for metrology-grade references where signal integrity dominates.

Availability

HZ30-1TD-P-E is available at Aetrix Electronics and suitable for precision instrumentation, industrial sensor interfaces, and medical analog front-end designs requiring stable component supply with traceable lot history and consistent low-noise performance.

Supply support for HZ30-1TD-P-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, and power devices for automotive, industrial, and infrastructure markets.

The HZ-L Series was developed specifically for low-noise voltage reference applications in high-precision analog systems, emphasizing reduced diode noise, tight zener voltage distribution, and stable temperature behavior.

FAQ

What is the exact zener voltage range for HZ30-1TD-P-E?

The HZ30-1TD-P-E has a guaranteed zener voltage range of 28.2 V to 29.6 V when tested at I_Z = 0.5 mA and T_a = 25°C. This 1.4 V span reflects the device's tight binning for 30 V-class references, enabling accurate circuit design without post-manufacturing trimming. The value is measured under DC conditions per Renesas specification REJ03G0182-0300 Rev.3.00.

Is HZ30-1TD-P-E suitable for surface-mount assembly?

No, the HZ30-1TD-P-E uses a DO-35 glass axial package with 2.0 mm diameter and 26.0 mm length, designed exclusively for through-hole PCB mounting. It is not compatible with reflow or wave soldering processes used for SMT. For surface-mount alternatives, consider Renesas' HZ-L Series SMD variants such as HZ30-1L-TB-E (SOD-123), but note that HZ30-1TD-P-E itself requires axial lead insertion and axial hole spacing.

What is the maximum reverse leakage current specification for HZ30-1TD-P-E?

The HZ30-1TD-P-E specifies a maximum reverse leakage current (I_R) of 1 μA when tested at V_R = 20.2 V and T_a = 25°C. This low leakage ensures minimal error contribution in high-impedance reference divider networks and preserves accuracy in battery-powered or low-quiescent-current applications where leakage-induced voltage drop must be minimized.

How does the noise performance of HZ30-1TD-P-E compare to standard Zener diodes?

The HZ30-1TD-P-E achieves approximately 1/3 to 1/10 the noise level of conventional HZ-series Zeners, as confirmed in Renesas' characterization data. This reduction stems from optimized silicon planar junction processing and low-noise epitaxial structure - directly enabling improved signal-to-noise ratio in precision analog stages where the HZ30-1TD-P-E serves as a reference or bias element.

Does HZ30-1TD-P-E have a documented temperature coefficient?

Yes, the HZ30-1TD-P-E has a typical temperature coefficient (γ_Z) of −0.04 %/°C, corresponding to approximately −11.3 mV/°C at 29 V. This value is derived from Figure 2 in the official datasheet (REJ03G0182-0300 Rev.3.00) and applies across its operating temperature range. The negative coefficient allows predictable drift modeling and compensation in multi-component reference designs.