Renesas HZ3ALL-E

Overview

HZ3ALL-E from Renesas is a silicon planar Zener diode engineered for hard-knee, low-noise voltage regulation at 2.5–2.9 V nominal Zener voltage, with dynamic impedance as low as 360 Ω at IZK = 0.5 µA and temperature coefficient of –0.02 mV/°C - deployed in precision reference circuits for analog sensor signal conditioning.

For engineers reviewing the HZ3ALL-E datasheet, HZ3ALL-E pinout, HZ3ALL-E application, or HZ3ALL-E equivalent, key selection criteria include low-current knee sharpness (IZ = 1 nA to 1 mA), ultra-low noise performance, DO-35 package compatibility, and stable 2.7 V nominal regulation under sub-mA bias conditions.

Technical Context

The HZ3ALL-E employs a planar diffusion process to achieve semi-logarithmic VZ–IZ linearity across 1 nA–1 mA, enabling stable reference generation without external current boosting. Its hard-knee behavior originates from controlled avalanche breakdown onset below 0.5 µA, minimizing voltage hysteresis during low-duty-cycle biasing.

Designed for operation at IZT = 0.5 mA, the device delivers <0.6 V linearity error (∆VZ1) between 0.05 mA and 0.5 mA, and maintains <50 Ω dynamic impedance (ZZK) at IZK = 0.5 µA - critical for noise-sensitive bandgap references and low-power ADC voltage references.

Key Specifications

Pinout & Package

Package: DO-35 (JEITA code GRZZ0002ZB-A), glass axial body with navy blue cathode band and verdure-colored body; 2.5 mm diameter × 5 mm length; 0.13 g mass; SC-40 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with 1N5223B and BZX84-C2V7, the HZ3ALL-E uniquely supports stable 2.7 V reference generation at currents as low as 1 nA with <0.02 mV/°C drift - making it irreplaceable in ultra-low-power, high-accuracy analog subsystems where bias current and thermal stability are co-constrained.

Availability

HZ3ALL-E is available at Aetrix Electronics and suitable for high-precision analog sensor reference, low-power RTC voltage reference, and medical pulse oximeter front-end designs requiring stable component supply with traceable lot history and extended lifecycle support.

Supply support for HZ3ALL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded design innovation for automotive, industrial, infrastructure, and IoT applications.

The HZ-LL Series was developed specifically for ultra-low-noise, hard-knee Zener reference applications in battery-operated and thermally unstable environments - targeting analog signal chains where traditional zeners introduce unacceptable drift or noise.

FAQ

What is the nominal Zener voltage of the HZ3ALL-E and how is it tested?

The HZ3ALL-E has a nominal Zener voltage of 2.7 V, specified as 2.5 V minimum and 2.9 V maximum at I_Z = 0.5 mA under DC test conditions. This value is measured using a constant-current source with traceable metrology, per Renesas REJ03G0183-0300 Rev.3.00 test methodology. The HZ3ALL-E's tight tolerance and hard-knee behavior make it suitable for untrimmed reference designs where the HZ3ALL-E serves as the primary voltage anchor.

Does the HZ3ALL-E support operation below 1 µA, and what is its performance at 100 nA?

Yes, the HZ3ALL-E is characterized down to 1 nA and exhibits stable regulation at 100 nA, with ∆V_Z < 15 mV from 100 nA to 1 µA. At 100 nA, its dynamic impedance remains <120 Ω and temperature coefficient holds near –0.02 mV/°C. This capability is intrinsic to the HZ3ALL-E's planar diffusion structure and distinguishes it from conventional zeners that require ≥1 mA for stable operation.

What is the cathode identification method for the HZ3ALL-E?

The HZ3ALL-E uses a navy blue cathode band located at one end of the DO-35 glass body, with the verdure-colored body providing contrast. Pin 1 (cathode) is the banded end; Pin 2 (anode) is the opposite lead. This marking conforms to JEITA Package Code GRZZ0002ZB-A and is verified on all Renesas production lots of the HZ3ALL-E.

Can the HZ3ALL-E replace standard 2.7 V Zener diodes like BZX84-C2V7 in existing designs?

No - the HZ3ALL-E is not a drop-in replacement for BZX84-C2V7 due to fundamental differences: DO-35 through-hole vs. SOT-23 surface-mount packaging, distinct thermal resistance profiles, and vastly different low-current knee characteristics. While both regulate near 2.7 V, the HZ3ALL-E's sub-µA stability and –0.02 mV/°C γ_Z require specific bias network redesign. Use the HZ3ALL-E only where its unique low-current performance is explicitly needed.

What is the maximum allowable junction temperature for continuous operation of the HZ3ALL-E?

The HZ3ALL-E has a maximum junction temperature (T_j) rating of 175°C, validated per absolute maximum ratings in REJ03G0183-0300 Rev.3.00. Derating begins at T_a > 25°C per Fig.3, with P_d reduced linearly to zero at 150°C ambient. For reliable long-term operation, sustained T_j should remain ≤150°C; the HZ3ALL-E's thermal design supports this when mounted on FR-4 with standard 10 mm² copper pour per lead.