Renesas HZ3B3-E

Overview

HZ3B3-E from Renesas is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized DC supplies, featuring a nominal zener voltage of 3.3 V ±0.2 V at 5 mA, 500 mW power dissipation, and low dynamic impedance of 100 Ω - deployed in industrial sensor biasing and microcontroller reference circuits.

For engineers reviewing the HZ3B3-E datasheet, HZ3B3-E pinout, HZ3B3-E application, or HZ3B3-E equivalent, key selection criteria include verified zener voltage tolerance (±0.2 V), DO-35 package thermal derating above 25°C, reverse leakage under 0.5 µA at 1 V, and compatibility with low-current shunt regulator topologies requiring stable 3.3 V references.

Technical Context

The HZ3B3-E operates as a two-terminal shunt voltage regulator, conducting in reverse breakdown to clamp voltage across load terminals. Its planar junction construction ensures repeatable zener characteristics and low temperature coefficient (−0.04 %/°C typical at 3.3 V).

It is rated for continuous operation up to 175°C junction temperature and exhibits stable regulation under DC test conditions per JEITA standard GRZZ0002ZB-A. Dynamic resistance remains ≤100 Ω at I_Z = 5 mA, enabling effective ripple suppression in low-noise analog subsystems.

Key Specifications

Pinout & Package

DO-35 glass axial package with cathode identified by navy-blue band; total mass 0.13 g, body diameter 2.0 mm max, lead spacing 4.2 mm, length 26.0 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Compared with 1N4728A and BZX55C3V3, the HZ3B3-E delivers tighter initial V_Z tolerance (±0.2 V vs. ±5%), lower leakage (0.5 µA vs. ≥1 µA), and guaranteed DO-35 mechanical compatibility - making it optimal for space-constrained, low-drift analog designs where calibration headroom is limited.

Availability

HZ3B3-E is available at Aetrix Electronics and suitable for industrial sensor conditioning, microcontroller reference voltage generation, and low-power IoT node regulation requiring stable component supply across multi-year production cycles.

Supply support for HZ3B3-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.

The HZ Series was developed specifically for high-reliability, low-drift shunt regulation in space-constrained industrial power supplies - emphasizing tight V_Z grading, low r_d, and robust thermal performance in DO-35 packaging.

FAQ

What is the exact zener voltage range specified for HZ3B3-E at 5 mA test current?

The HZ3B3-E has a guaranteed zener voltage range of 3.1 V to 3.5 V when tested at I_Z = 5 mA and T_a = 25°C. This ±0.2 V tolerance reflects Grade B3 specification per Renesas REJ03G0180-0600 Rev.6.00, distinguishing it from broader-tolerance variants like HZ3C3 (±0.3 V) or HZ3A3 (±0.1 V). The HZ3B3-E achieves this via post-process binning and is documented on page 2 of the official datasheet.

Does HZ3B3-E support operation above 85°C ambient temperature?

Yes, the HZ3B3-E is rated for storage from −55°C to +175°C and junction operation up to 175°C. Its DO-35 package allows reliable function at 105°C ambient when derated per Figure 3 in the datasheet - delivering ~350 mW at 105°C. Designers must calculate power dissipation (V_Z × I_Z) and ensure heatsinking or airflow prevents T_j exceedance. The HZ3B3-E's thermal design enables use in sealed industrial enclosures without active cooling.

What is the dynamic resistance value of HZ3B3-E and why does it matter in regulation circuits?

The HZ3B3-E has a maximum dynamic resistance (r_d) of 100 Ω at I_Z = 5 mA and 25°C. This parameter directly determines how much output voltage changes with load current variation - e.g., a 1 mA change in shunt current causes ≤100 mV shift in regulated voltage. In precision analog front-ends, low r_d ensures stable reference voltage despite varying sensor bias currents. The HZ3B3-E's r_d is confirmed in Table "Electrical Characteristics" on page 2 of the Renesas datasheet.

Can HZ3B3-E be used as a direct replacement for BZX55C3V3 in existing DO-35 layouts?

Yes, the HZ3B3-E shares identical DO-35 mechanical dimensions, pinout, and cathode band orientation with BZX55C3V3, enabling drop-in replacement without PCB modification. However, its tighter V_Z tolerance (±0.2 V vs. ±5%) and lower leakage (0.5 µA vs. 1 µA) may improve system accuracy and battery life. Verify that the improved specs align with your design margins - the HZ3B3-E performs identically in layout but exceeds BZX55C3V3 in precision-critical roles.

Is HZ3B3-E compliant with RoHS and lead-free soldering requirements?

Yes, the HZ3B3-E meets RoHS Directive 2011/65/EU and is compatible with lead-free reflow profiles (JEDEC J-STD-020). Renesas confirms halogen-free and lead-free construction in the "Environmental Data" section of the HZ Series product brief (REJ03G0180-0600). The DO-35 glass package contains no restricted substances above threshold limits, and the HZ3B3-E withstands peak reflow temperatures up to 260°C for 10 seconds - consistent with standard Pb-free assembly processes.