Renesas HZ3C1J-E

Overview

HZ3C1J-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 6.1 V, dynamic resistance of 60 Ω at 0.5 mA, maximum power dissipation of 400 mW, and junction temperature rating of 175 °C - deployed in reference voltage sources for data converters and low-drift sensor signal conditioning.

For engineers reviewing the HZ3C1J-E datasheet, HZ3C1J-E pinout, HZ3C1J-E application, or HZ3C1J-E equivalent, key selection criteria include zener voltage tolerance (±0.3 V), low noise performance (1/3–1/10 that of standard HZ series), DO-35 package thermal limits, and temperature coefficient behavior below 0.1 %/°C in the 6 V range.

Technical Context

The HZ3C1J-E operates as a two-terminal shunt regulator with DC-tested zener breakdown characteristics, designed for stable biasing in low-current (<1 mA) analog front-ends where noise floor and thermal drift directly impact measurement fidelity. Its planar construction ensures consistent rd and VZ stability across production lots.

It exhibits a negative temperature coefficient near zero crossing (~0.02 %/°C at 6.1 V), confirmed by Figure 2 in REJ03G0182-0300, and maintains <1 μA reverse leakage at VR = 2.0 V - critical for high-impedance node stabilization in battery-powered instrumentation.

Key Specifications

Pinout & Package

Package: DO-35 glass axial package (JEITA code GRZZ0002ZB-A), orange body with navy-blue cathode band; 2.0 mm diameter × 26.0 mm length; 0.13 g mass; rated for PCB mounting with 10 mm lead spacing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with 1N5233B and BZX55C6V2, the HZ3C1J-E delivers tighter V_Z tolerance (±0.3 V vs. ±5%), quantified low-noise performance, and documented near-zero tempco - making it uniquely suitable for metrology-grade references where noise and drift dominate error budgets.

Availability

HZ3C1J-E is available at Aetrix Electronics and suitable for high-precision ADC reference design, low-drift sensor biasing, and thermocouple cold-junction compensation requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for HZ3C1J-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog power devices, and precision timing components for industrial, automotive, and infrastructure applications.

The HZ-L Series was engineered specifically for low-noise voltage reference applications in high-fidelity analog systems - targeting designers who require quantifiable noise reduction, tight V_Z tolerance, and stable thermal behavior in discrete Zener solutions.

FAQ

What is the exact zener voltage range for HZ3C1J-E at 0.5 mA test current?

The HZ3C1J-E has a guaranteed zener voltage range of 5.8 V (minimum) to 6.4 V (maximum) when tested at I_Z = 0.5 mA, per Electrical Characteristics table on page 2 of REJ03G0182-0300. This ±0.3 V tolerance enables precise binning for matched reference designs and distinguishes HZ3C1J-E from broader-tolerance alternatives like 1N5233B.

Does HZ3C1J-E meet low-noise requirements for 24-bit delta-sigma ADC references?

Yes - the HZ3C1J-E's documented noise level (1/3–1/10 that of standard HZ series) is validated in Renesas' characterization and directly supports 24-bit delta-sigma ADC reference applications where 1/f noise dominates error budgets below 10 kHz. Its 60 Ω dynamic resistance further stabilizes regulation under dynamic load conditions typical in sigma-delta modulator bias networks.

Can HZ3C1J-E be used in surface-mount designs?

No - the HZ3C1J-E is packaged exclusively in the through-hole DO-35 axial glass case (GRZZ0002ZB-A). It is not offered in SMD variants such as SOD-123 or DO-213AB. For surface-mount equivalents, designers must select alternative families like the RLZ series or consider hybrid solutions with SOT-23-mounted regulators.

What is the maximum allowable reverse voltage before significant leakage occurs in HZ3C1J-E?

The HZ3C1J-E specifies maximum reverse leakage current of 1 μA at V_R = 2.0 V, per page 2 of REJ03G0182-0300. Leakage remains below this threshold up to 2.0 V; beyond that, exponential increase begins. For reliable high-impedance node operation, keep applied reverse voltage ≤2.0 V unless operating in true zener breakdown mode at ≥5.8 V.

How does the temperature coefficient of HZ3C1J-E compare to other 6 V Zeners?

Per Figure 2 in REJ03G0182-0300, the HZ3C1J-E exhibits a temperature coefficient of approximately +0.02 %/°C near 6.1 V - significantly lower than typical 6 V Zeners (e.g., 1N5233B at +0.06 %/°C). This near-zero tempco minimizes drift-induced offset in precision instrumentation over −40 to +125 °C ambient ranges.