Renesas HZ3C1JTA-E

Overview

HZ3C1JTA-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 6.1 V, 400 mW power dissipation, 60 Ω dynamic impedance at 0.5 mA test current, and DO-35 glass axial package with orange body and navy blue cathode band.

For engineers reviewing the HZ3C1JTA-E datasheet, HZ3C1JTA-E pinout, HZ3C1JTA-E application, or HZ3C1JTA-E equivalent, this part serves as a low-noise, low-leakage voltage reference in stabilized power supplies, sensor signal conditioning, and analog front-end biasing where thermal stability and noise performance are critical.

Technical Context

The HZ3C1JTA-E operates as a two-terminal shunt regulator with fixed breakdown voltage defined by its doped junction structure. Its low noise level-approximately 1/3 to 1/10 that of standard HZ-series diodes-is achieved through optimized planar processing and low-defect epitaxial layer design.

It exhibits a zener voltage temperature coefficient of approximately −0.04 %/°C (−2.5 mV/°C) near 6.1 V, low reverse leakage (<1 μA at VR = 2.0 V), and maintains stable regulation across ambient temperatures from −55°C to +175°C with derated power above 25°C.

Key Specifications

Pinout & Package

Package: DO-35 glass axial package (JEITA code GRZZ0002ZB-A, Renesas code SC-40), orange body with navy blue cathode band; dimensions: φD = 2.0 mm, L = 26.0 mm, E = 4.2 mm; mass ≈ 0.13 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with 1N4734A and BZX85C6V2, the HZ3C1JTA-E delivers superior noise performance and tighter low-current regulation at 6.1 V, making it uniquely suited for precision analog reference applications where signal integrity outweighs raw power handling.

Availability

HZ3C1JTA-E is available at Aetrix Electronics and suitable for stabilized power supply design, precision analog reference circuits, and industrial sensor excitation requiring stable component supply with traceable Renesas manufacturing origin and consistent DO-35 packaging.

Supply support for HZ3C1JTA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for automotive, industrial, and infrastructure markets.

The HZ-L Series, including HZ3C1JTA-E, was designed specifically for low-noise voltage reference applications in high-fidelity audio, precision instrumentation, and sensor signal chains where conventional Zener diodes introduce unacceptable noise or drift.

FAQ

What is the exact zener voltage tolerance for HZ3C1JTA-E?

The HZ3C1JTA-E has a specified zener voltage range of 5.8 V (minimum) to 6.4 V (maximum) at a test current of 0.5 mA, corresponding to a ±5% tolerance centered on the typical value of 6.1 V. This tolerance is guaranteed per Renesas datasheet REJ03G0182-0300 Rev.3.00 and applies under DC test conditions at 25°C ambient temperature. The HZ3C1JTA-E maintains this specification across its qualified operating temperature range.

Is HZ3C1JTA-E compatible with lead-free reflow soldering processes?

Yes, the HZ3C1JTA-E uses a DO-35 glass package with axial leads suitable for lead-free reflow soldering per JEDEC J-STD-020. Its maximum peak reflow temperature rating is 260°C for 10 seconds, and the device meets RoHS compliance requirements. The glass body and metallization are qualified for standard Pb-free assembly, and no special pre-baking is required prior to reflow. The HZ3C1JTA-E retains full electrical specifications after compliant soldering.

How does the noise performance of HZ3C1JTA-E compare to standard Zener diodes?

The HZ3C1JTA-E achieves approximately 1/3 to 1/10 the noise level of standard HZ-series Zener diodes due to proprietary planar junction processing and low-defect epitaxial layer optimization. This reduction is measured under identical bias and bandwidth conditions and directly improves signal-to-noise ratio in sensitive analog circuits. The HZ3C1JTA-E's low-noise characteristic is a key differentiator versus generic Zeners like 1N4734A or BZX85C6V2, especially below 10 kHz.

What is the maximum allowable reverse voltage before breakdown for HZ3C1JTA-E?

The HZ3C1JTA-E is rated for reverse breakdown at 6.1 V (typical), with guaranteed operation between 5.8 V and 6.4 V at 0.5 mA. It is not rated for stable operation below its specified zener voltage; applying reverse voltage less than 5.8 V results in negligible conduction (<1 μA leakage). The device should not be subjected to reverse voltages exceeding its absolute maximum rating of 400 mW power dissipation-calculated as V × I-and must be current-limited externally to prevent thermal runaway. The HZ3C1JTA-E functions only as a shunt regulator within its specified V_Z window.

Can HZ3C1JTA-E be used in series or parallel configurations for higher voltage or current capability?

No-HZ3C1JTA-E is not designed for series or parallel operation. Its zener voltage tolerance (±5%) and dynamic resistance mismatch between units cause uneven current sharing in parallel, risking thermal runaway. In series, cumulative voltage tolerance and tempco drift degrade accuracy and stability. Renesas specifies single-device use only. For higher voltage needs, select an appropriate HZ-L variant (e.g., HZ12B2L); for higher current, use an active circuit with HZ3C1JTA-E as reference driving a pass transistor. The HZ3C1JTA-E must operate as an individual shunt reference.