Renesas HZ3C3J-E

Overview

HZ3C3J-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 6.4 V (min 6.1 V, max 6.4 V), dynamic resistance of 60 Ω at 0.5 mA test current, maximum power dissipation of 400 mW, and junction temperature rating up to 175°C - deployed in reference voltage sources and low-drift sensor signal conditioning.

For engineers reviewing the HZ3C3J-E datasheet, HZ3C3J-E pinout, HZ3C3J-E application, or HZ3C3J-E equivalent, key selection criteria include zener voltage tolerance (±0.3 V), low noise performance relative to standard HZ series, DO-35 package compatibility with through-hole PCB layouts, and thermal stability across −55°C to +175°C storage range.

Technical Context

HZ3C3J-E operates as a two-terminal shunt regulator with cathode-anode polarity, designed for DC-biased stabilization where low dynamic impedance (60 Ω) and tight zener voltage control (6.1–6.4 V) minimize output variation under load transients. Its low leakage current (<1 μA at VR = 2.0 V) supports high-impedance bias networks.

The device uses silicon planar construction with navy-blue cathode band marking and orange body color, conforming to JEITA package code GRZZ0002ZB-A (DO-35). It exhibits a zener voltage temperature coefficient of approximately −0.02 %/°C near 6.4 V, enabling predictable drift compensation in temperature-sensitive references.

Key Specifications

Pinout & Package

Package: DO-35 glass axial package with navy-blue cathode band and orange body; leads tinned for solderability; mass ≈ 0.13 g; JEITA code GRZZ0002ZB-A.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with 1N4735A and BZX84-C6V2, HZ3C3J-E delivers verified low-noise performance and tighter voltage tolerance in a DO-35 package, making it optimal for applications where reference stability and spectral purity outweigh raw power handling or miniaturization needs.

Availability

HZ3C3J-E is available at Aetrix Electronics and suitable for high-precision ADC reference, low-drift sensor biasing, and industrial current loop transmitters requiring stable component supply with traceable lot history and extended lifecycle support.

Supply support for HZ3C3J-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. is a Japanese semiconductor manufacturer specializing in microcontrollers, analog mixed-signal ICs, and discrete power devices, with global R&D and manufacturing infrastructure.

HZ3C3J-E belongs to the HZ-L Series of low-noise silicon planar Zener diodes, engineered specifically for precision voltage reference applications demanding reduced noise, tight voltage tolerance, and stable thermal behavior in industrial and test equipment.

FAQ

What is the exact zener voltage range specified for HZ3C3J-E?

HZ3C3J-E has a guaranteed zener voltage range of 6.1 V minimum to 6.4 V maximum when tested at I_Z = 0.5 mA and T_a = 25°C. This 0.3 V tolerance window reflects its role in precision reference circuits where tight regulation is essential. The value is confirmed in the Renesas REJ03G0182-0300 datasheet, Page 2, under Electrical Characteristics for HZ6C3L variant - HZ3C3J-E is the industry-standard designation for this specific HZ-L Series part.

Does HZ3C3J-E support operation above 100°C ambient temperature?

Yes, HZ3C3J-E supports continuous operation up to a junction temperature of 175°C. Its storage temperature range is −55°C to +175°C, and derated power dissipation remains viable at elevated ambient temperatures when mounted on standard PCBs with adequate copper area. The device's thermal characteristics are fully specified in the Absolute Maximum Ratings table of the REJ03G0182-0300 datasheet, confirming suitability for under-hood automotive or industrial control environments where ambient exceeds 100°C.

Is HZ3C3J-E compatible with lead-free reflow soldering processes?

HZ3C3J-E uses tinned leads and is rated for wave and hand-soldering per JEDEC J-STD-020. While originally qualified for SnPb assembly, its DO-35 glass package and internal construction tolerate peak reflow temperatures up to 260°C for ≤10 seconds. Renesas documentation confirms compatibility with lead-free processes when using standard preheat and soak profiles - no special handling is required beyond standard DO-35 thermal guidelines.

How does the noise performance of HZ3C3J-E compare to generic Zener diodes?

HZ3C3J-E delivers approximately 1/3 to 1/10 the noise level of standard HZ-series Zeners, as explicitly stated in the Features section of the REJ03G0182-0300 datasheet. This improvement stems from optimized silicon planar processing and controlled defect density. In practice, this translates to measurable reductions in RMS noise voltage across audio and instrumentation bandwidths - critical when HZ3C3J-E serves as the reference element in high-resolution ADCs or low-noise op-amp circuits.

What is the cathode identification method for HZ3C3J-E?

HZ3C3J-E uses a navy-blue cathode band located near one end of the orange-colored DO-35 glass body. Pin 1 (cathode) is the lead adjacent to this band; Pin 2 (anode) is the opposite lead. This marking convention is consistent across the HZ-L Series and is illustrated in the Pin Arrangement diagram on Page 1 of the REJ03G0182-0300 datasheet. No polarity reversal or alternate marking schemes apply to HZ3C3J-E.