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Renesas HZ4.7BPTN-E
- Part No.:
- HZ4.7BPTN-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZ4.7BPTN-E.pdf
- Description:
- DIODE ZENER
- Quantity:
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Inventory:17,500
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Product details
Overview
HZ4.7BPTN-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 4.7 V, 400 mW power dissipation, <1 μA reverse leakage at 1 V, DO-35 glass package, and noise level approximately 1/3–1/10 that of standard HZ-series diodes - used in reference supplies for ADCs and low-drift op-amp biasing.
For engineers reviewing the HZ4.7BPTN-E datasheet, HZ4.7BPTN-E pinout, HZ4.7BPTN-E application, or HZ4.7BPTN-E equivalent, key selection criteria include zener voltage tolerance (±5%), dynamic impedance (≤80 Ω at 5 mA), temperature coefficient (−0.05 %/°C), low-noise performance, and DO-35 mechanical compatibility in space-constrained analog signal chains.
Technical Context
The HZ4.7BPTN-E employs a planar diffusion structure to minimize generation-recombination noise and achieve stable zener breakdown at low currents. Its 4.7 V rating places it in the negative temperature coefficient region, enabling predictable drift compensation in dual-diode configurations.
Designed for DC-stabilized operation, it specifies zener voltage under 5 mA test current with ≤80 Ω dynamic resistance, supports junction temperatures up to 175°C, and maintains <1 μA reverse leakage at VR = 1 V - critical for high-impedance reference nodes and battery-powered sensor front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 4.7 V nominal, ±5% tolerance - ensures tight reference accuracy without post-calibration in 5 V rail monitoring. |
| Power Dissipation (Pd) | 400 mW - enables stable regulation at up to 85 mA zener current in ambient temperatures ≤70°C. |
| Dynamic Resistance (rd) | ≤80 Ω at IZ = 5 mA - minimizes output impedance variation under load transients in feedback references. |
| Reverse Leakage (IR) | <1 μA at VR = 1 V - preserves high-impedance node integrity in micropower sensor bias networks. |
| Temperature Coefficient (γZ) | −0.05 %/°C - provides predictable, linear drift for temperature-compensated reference designs. |
| Noise Level | ≈1/3–1/10 of HZ-series - reduces broadband voltage noise in audio preamps and precision instrumentation amplifiers. |
Pinout & Package
DO-35 glass axial package (JEITA code GRZZ0002ZB-A, Renesas code SC-40), 2.0 mm diameter × 26.0 mm length, orange body with navy-blue cathode band. Mass: 0.13 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Zener breakdown anode connection | Connected to regulated positive rail; polarity must be observed to avoid forward conduction. |
| 2 (Anode) | Zener breakdown cathode connection | Typically grounded or tied to lower potential; defines reference node location in shunt regulator topology. |
Key Features
| Feature | Design Value |
|---|---|
| Low-noise Zener structure | Planar silicon process reduces generation-recombination noise by ≥70% vs. legacy HZ series. |
| Stable low-current regulation | Specified VZ and rd at IZ = 5 mA - supports reliable operation in micropower (<100 μA) reference designs. |
| Negative tempco at 4.7 V | γZ = −0.05 %/°C - enables thermal drift cancellation when paired with positive-tempco components. |
| High-reliability glass package | DO-35 with hermetic seal - ensures long-term stability in industrial environments with thermal cycling. |
Applications
| ADC Reference Supply | Op-Amp Bias Network |
|---|---|
Use Scenario: Providing stable 4.7 V reference for 16-bit SAR ADCs in portable data loggers. IC Role / Device Role / Timing Role: Shunt voltage reference establishing precise input full-scale range. Use Value: Low noise and <1 μA leakage prevent code flicker and offset drift during battery-operated acquisition. |
Use Scenario: Setting common-mode voltage for rail-to-rail input op-amps in medical ECG front-ends. IC Role / Device Role / Timing Role: Precision DC bias point generator for differential amplifier stages. Use Value: −0.05 %/°C tempco enables <±10 ppm/°C common-mode stability over 0–70°C. |
| Low-Power Sensor Excitation | Calibration Voltage Standard |
Use Scenario: Exciting resistive bridge sensors (e.g., strain gauges) in wireless IoT nodes. IC Role / Device Role / Timing Role: Low-drift excitation source maintaining bridge balance accuracy. Use Value: 400 mW Pd allows 85 mA max current - sufficient for 120 Ω bridges at 10 V while staying within thermal limits. |
Use Scenario: On-board calibration reference in handheld multimeters and bench DMMs. IC Role / Device Role / Timing Role: Factory-trimmable voltage standard traceable to metrology-grade sources. Use Value: ±5% VZ tolerance and DO-35 mechanical consistency support automated calibration fixture alignment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX55-C4V7 (ON Semiconductor) | Same 4.7 V nominal, ±5% tolerance, but higher dynamic resistance (≤120 Ω) and no published noise spec. | Lacks documented low-noise optimization - unsuitable for sub-16-bit precision analog paths. | Select only where cost sensitivity outweighs noise and tempco requirements. |
| MMSZ4704T1G (ON Semiconductor) | SOD-123 surface-mount package; same VZ, but 300 mW Pd, higher leakage (≤5 μA), and no low-noise characterization. | Enables PCB area reduction but sacrifices thermal margin and noise performance in high-precision roles. | Choose for space-constrained digital systems where analog fidelity is secondary. |
Compared with BZX55-C4V7 and MMSZ4704T1G, the HZ4.7BPTN-E delivers superior noise suppression, tighter tempco control, and higher power handling - making it the preferred choice for metrology-grade analog references despite its through-hole DO-35 form factor.
Availability
HZ4.7BPTN-E is available at Aetrix Electronics and suitable for precision ADC references, op-amp bias networks, low-power sensor excitation, and calibration voltage standards requiring stable component supply across extended production lifecycles.
Supply support for HZ4.7BPTN-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Technology Corp. is a Japanese semiconductor manufacturer specializing in microcontrollers, analog mixed-signal ICs, and power management solutions for industrial, automotive, and infrastructure markets.
The HZ-L Series was developed specifically for low-noise, high-stability voltage reference applications in precision analog systems - targeting design engineers needing metrology-grade zener performance in standard DO-35 packaging.
FAQ
What is the zener voltage tolerance for HZ4.7BPTN-E?
The HZ4.7BPTN-E has a nominal zener voltage of 4.7 V with a tolerance of ±5%, meaning the actual measured VZ falls between 4.465 V and 4.935 V at IZ = 5 mA and TA = 25°C. This tolerance is guaranteed per Renesas' HZ-L Series specification sheet REJ03G0182-0300 Rev.3.00 and applies to all units shipped as HZ4.7BPTN-E.
Does HZ4.7BPTN-E support surface-mount assembly?
No, the HZ4.7BPTN-E uses a DO-35 glass axial package with 2.0 mm diameter and 26.0 mm body length - designed exclusively for through-hole mounting. It is not compatible with reflow or wave soldering processes intended for SMT packages like SOD-123 or SOT-23. Alternative SMT parts such as MMSZ4704T1G exist but differ in noise, tempco, and power rating.
What is the maximum reverse leakage current for HZ4.7BPTN-E?
The maximum reverse leakage current for HZ4.7BPTN-E is <1 μA when tested at VR = 1 V and TA = 25°C. This value is specified in the Electrical Characteristics table on page 2 of the official Renesas datasheet REJ03G0182-0300 Rev.3.00 and reflects the device's suitability for high-impedance reference nodes where leakage-induced error must be minimized.
Can HZ4.7BPTN-E be used in place of generic 4.7 V Zener diodes?
While HZ4.7BPTN-E shares the same nominal voltage and DO-35 package as many generic 4.7 V Zeners, it is not a drop-in replacement due to its proprietary low-noise planar structure, −0.05 %/°C temperature coefficient, and guaranteed ≤80 Ω dynamic resistance. Substituting it with non-HZ-L parts risks increased noise, drift, and regulation instability in precision analog circuits.
What is the junction temperature limit for HZ4.7BPTN-E?
The absolute maximum junction temperature for HZ4.7BPTN-E is 175°C, as defined in the Absolute Maximum Ratings table of the Renesas datasheet REJ03G0182-0300 Rev.3.00. This rating assumes proper PCB thermal relief and ambient conditions within −55°C to +175°C storage range; derating is required above 70°C ambient to maintain 400 mW power dissipation capability.
HZ4.7BPTN-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZ4.7BPTN-E FAQ
1.How can I place an order for HZ4.7BPTN-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZ4.7BPTN-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZ4.7BPTN-E reliable?
The price and inventory of HZ4.7BPTN-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZ4.7BPTN-E is usually 5 days.
3.What payment methods are accepted for HZ4.7BPTN-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZ4.7BPTN-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZ4.7BPTN-E?
HZ4.7BPTN-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZ4.7BPTN-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZ4.7BPTN-E?
For technical support, including HZ4.7BPTN-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZ4.7BPTN-E requirements.
6.How does Aetrix verify that HZ4.7BPTN-E is sourced from the original manufacturer or authorized distributors?
All HZ4.7BPTN-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZ4.7BPTN-E meets industry standards.
7.What is the process for return or replacement of HZ4.7BPTN-E?
All HZ4.7BPTN-E units undergo pre-shipment inspection (PSI). If there is an issue with HZ4.7BPTN-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZ4.7BPTN-E part is unused and in its original packaging.
Return procedure for HZ4.7BPTN-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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