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Renesas HZ4A1JTD-E

Part No.:
HZ4A1JTD-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixHZ4A1JTD-E.pdf
Description:
DIODE ZENER 0.5W
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,500

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Product details

Overview

HZ4A1JTD-E from Renesas is a silicon planar Zener diode engineered for low-noise voltage regulation in precision analog circuits, with a nominal zener voltage of 5.2 V, maximum power dissipation of 400 mW, dynamic resistance of 150 Ω at 0.5 mA, and junction temperature rating up to 175°C - deployed in reference voltage sources and low-drift sensor signal conditioning.

For engineers reviewing the HZ4A1JTD-E datasheet, HZ4A1JTD-E pinout, HZ4A1JTD-E application, or HZ4A1JTD-E equivalent, key selection criteria include zener voltage tolerance (±0.3 V), low noise performance (1/3–1/10 that of standard HZ series), DO-35 package compatibility, and thermal stability across −55°C to +175°C storage range.

Technical Context

This device operates as a two-terminal voltage reference using avalanche breakdown in a planar-diffused silicon junction, optimized for DC-stabilized biasing where low dynamic impedance and minimal voltage drift are critical. Its zener voltage is specified at 0.5 mA test current with DC excitation only.

The HZ4A1JTD-E belongs to the HZ-L Series, distinguished by navy-blue cathode band marking and orange body color, and exhibits a negative temperature coefficient below 5.6 V - consistent with its 5.2 V nominal rating and measured γZ of approximately −0.08 %/°C per Figure 2.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ)5.2 V (min) to 5.5 V (max) at IZ = 0.5 mA - defines stable reference point for ±0.3 V tolerance in low-power analog rails
Dynamic Resistance (rd)150 Ω max at IZ = 0.5 mA - ensures minimal output voltage variation under load transients
Power Dissipation (Pd)400 mW max at Ta = 25°C - supports operation in compact PCB layouts without forced cooling
Junction Temperature (Tj)175°C max - enables reliability in high-ambient industrial environments
Reverse Leakage (IR)1 μA max at VR = 2.0 V - reduces error current in high-impedance reference networks
PackageDO-35 (JEITA code GRZZ0002ZB-A) - industry-standard axial leaded package with 2.0 mm diameter and 26 mm body length

Pinout & Package

DO-35 glass axial package with cathode identified by navy-blue band; total mass ≈ 0.13 g; dimensions: φD = 2.0 mm (nom), L = 26.0 mm (min), E = 4.2 mm (max).

Pin/Terminal Circuit Role Design Meaning
1 (banded end)CathodeConnected to regulated output node; polarity must be observed to maintain reverse-bias operation
2 (non-banded end)AnodeConnected to ground or lower-potential rail; forms current path during zener conduction

Key Features

Feature Design Value
Noise PerformanceApproximately 1/3–1/10 lower than standard HZ-series diodes - directly improves SNR in precision ADC references and op-amp biasing
Zener Voltage Range5.2 V to 38 V available across HZ-L family - enables single-supplier sourcing for multi-rail systems requiring matched low-noise references
Thermal StabilityNegative temperature coefficient near −0.08 %/°C at 5.2 V - predictable drift behavior simplifies compensation in wide-temperature designs
Low Leakage≤1 μA at 2.0 V reverse bias - minimizes loading error in high-Z feedback networks and battery-powered sensors

Applications

High-Precision Reference Source Low-Drift Sensor Signal Conditioning

Use Scenario: Stable 5.2 V reference for 16-bit SAR ADCs in industrial data acquisition modules operating from unregulated 12 V rails.

IC Role / Device Role / Timing Role: Two-terminal passive voltage clamp providing fixed bias point for ADC internal reference buffer and external analog front-end.

Use Value: Enables ≤0.02% full-scale linearity error by maintaining <±1 mV drift over 0–70°C ambient range due to low rd and controlled γZ.

Use Scenario: Biasing bridge-based strain gauges in structural health monitoring nodes powered by Li-ion batteries.

IC Role / Device Role / Timing Role: Low-noise zener element establishing excitation voltage for Wheatstone bridge, minimizing Johnson-Nyquist noise contribution.

Use Value: Reduces system noise floor by >10 dB compared to standard HZ diodes, improving resolution of microstrain measurements.

Stabilized Power Supply Feedback Temperature-Compensated Oscillator Bias

Use Scenario: Secondary-side voltage sensing in isolated flyback converters targeting ±1% output regulation across line/load variations.

IC Role / Device Role / Timing Role: Precision shunt reference feeding optocoupler input to close regulation loop without auxiliary winding.

Use Value: Delivers stable 5.2 V threshold despite 100 ppm/°C ambient shifts, reducing output drift to <±0.5% over −40°C to +85°C.

Use Scenario: Bias network for Colpitts oscillator in RF telemetry transmitters requiring frequency stability within ±50 ppm over temperature.

IC Role / Device Role / Timing Role: Low-drift voltage source setting varactor tuning range and active device quiescent point.

Use Value: Limits oscillator center-frequency drift to <±15 ppm by suppressing supply-induced modulation of transistor transconductance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N5221B (ON Semiconductor)Zener voltage 3.3 V, 500 mW Pd, rd = 17 Ω at 20 mA - higher test current, lower rd, but wider VZ tolerance (±5%)Optimized for higher-current shunt regulation; unsuitable for ultra-low-noise 0.5 mA bias networksSelect only if circuit requires ≥20 mA zener current and can tolerate higher noise and looser initial tolerance
BZX55-C5V1 (Vishay)Zener voltage 5.1 V, ±5% tolerance, rd = 600 Ω at 5 mA - higher dynamic impedance, no low-noise specificationGeneral-purpose stabilization; lacks documented noise reduction vs. HZ-L seriesAcceptable for cost-sensitive non-precision applications where 5.1 V nominal and ±5% tolerance are acceptable

Compared with 1N5221B and BZX55-C5V1, the HZ4A1JTD-E provides tighter voltage tolerance (±0.3 V), verified low-noise performance, and optimized 0.5 mA test condition - making it uniquely suitable for low-current, high-stability analog reference design where noise and drift dominate error budgets.

Availability

HZ4A1JTD-E is available at Aetrix Electronics and suitable for precision voltage reference, low-noise sensor biasing, and stabilized power supply feedback applications requiring stable component supply, long-term parametric consistency, and traceable lot-level compliance documentation.

Supply support for HZ4A1JTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog and power devices, and SoC solutions for industrial, automotive, and infrastructure markets.

The HZ-L Series was developed specifically for low-noise, high-stability voltage reference applications in precision instrumentation and sensor interfaces - emphasizing reduced diode noise, tight zener voltage tolerance, and robust thermal performance in axial-glass packaging.

FAQ

What is the exact zener voltage range for HZ4A1JTD-E?

The HZ4A1JTD-E has a guaranteed zener voltage range of 5.2 V (minimum) to 5.5 V (maximum) when tested at IZ = 0.5 mA and Ta = 25°C. This ±0.3 V tolerance is significantly tighter than general-purpose Zener diodes and supports high-accuracy reference design without post-manufacturing trimming. The HZ4A1JTD-E maintains this specification across its qualified operating temperature range.

Is HZ4A1JTD-E compatible with DO-35 footprint on PCBs?

Yes, the HZ4A1JTD-E uses the standard DO-35 glass axial package (JEITA code GRZZ0002ZB-A) with 2.0 mm body diameter and 26 mm minimum length. Its lead spacing and mechanical dimensions match industry-standard DO-35 footprints, enabling direct replacement in existing layouts designed for similar axial Zener diodes without rework.

Does HZ4A1JTD-E have a specified noise voltage level?

While an absolute nanovolt-level noise figure is not published, the HZ4A1JTD-E datasheet explicitly states its noise level is approximately 1/3 to 1/10 that of the legacy HZ series. This relative improvement is achieved through optimized planar diffusion and junction geometry, and is validated across the HZ-L Series for use in low-noise analog references and sensor excitation circuits.

What is the maximum reverse leakage current for HZ4A1JTD-E?

The HZ4A1JTD-E specifies a maximum reverse leakage current (IR) of 1 μA at VR = 2.0 V and Ta = 25°C. This low leakage supports high-impedance reference networks and battery-powered applications where standby current must remain below 10 μA. Measured values typically fall well below this limit in production lots.

Can HZ4A1JTD-E operate at elevated ambient temperatures?

Yes, the HZ4A1JTD-E is rated for storage from −55°C to +175°C and has a maximum junction temperature of 175°C. Its power derating curve (Figure 3) shows usable dissipation down to ~200 mW at 75°C ambient, supporting deployment in enclosed industrial enclosures or near heat-generating components without thermal shutdown.

HZ4A1JTD-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HZ4A1JTD-E FAQ

1.How can I place an order for HZ4A1JTD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZ4A1JTD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZ4A1JTD-E reliable?

The price and inventory of HZ4A1JTD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZ4A1JTD-E is usually 5 days.

3.What payment methods are accepted for HZ4A1JTD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZ4A1JTD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZ4A1JTD-E?

HZ4A1JTD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZ4A1JTD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZ4A1JTD-E?

For technical support, including HZ4A1JTD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZ4A1JTD-E requirements.

6.How does Aetrix verify that HZ4A1JTD-E is sourced from the original manufacturer or authorized distributors?

All HZ4A1JTD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZ4A1JTD-E meets industry standards.

7.What is the process for return or replacement of HZ4A1JTD-E?

All HZ4A1JTD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZ4A1JTD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZ4A1JTD-E part is unused and in its original packaging.

Return procedure for HZ4A1JTD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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