Renesas HZ4B1J-E

Overview

HZ4B1J-E from Renesas is a silicon planar Zener diode engineered for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 5.5 V (min 5.5 V, max 5.8 V), dynamic resistance of 80 Ω at 0.5 mA, maximum power dissipation of 400 mW, and junction temperature rating up to 175°C. It is used in stabilized power supplies, reference voltage sources, and noise-sensitive instrumentation.

For engineers reviewing the HZ4B1J-E datasheet, HZ4B1J-E pinout, HZ4B1J-E application, or HZ4B1J-E equivalent, key selection criteria include its low-noise performance (≈1/3–1/10 lower than standard HZ series), DO-35 package compatibility, zener voltage tolerance, temperature coefficient behavior, and thermal derating above 25°C ambient.

Technical Context

The HZ4B1J-E operates as a two-terminal voltage reference device with DC-tested zener characteristics, optimized for stable reverse-biased operation at I_Z = 0.5 mA. Its low dynamic resistance (80 Ω) and low leakage support tight regulation in low-current bias networks.

Designed for low-noise applications, it exhibits reduced diode noise versus legacy HZ-series parts and maintains predictable zener voltage temperature coefficient across its 5.5–5.8 V range - critical for high-stability analog front-ends and sensor signal conditioning.

Key Specifications

Pinout & Package

Package: DO-35 glass axial lead package (JEITA code GRZZ0002ZB-A, Renesas code SC-40), orange body with navy blue cathode band. Dimensions: φD = 2.0 mm, L = 26.0 mm, E = 4.2 mm; mass ≈ 0.13 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with 1N4732A and BZX55-C5V6, the HZ4B1J-E delivers verified low-noise operation and tighter low-current regulation at 0.5 mA, making it uniquely suitable for micropower, high-SNR analog systems - though its 400 mW rating requires careful thermal management in high-dissipation layouts.

Availability

HZ4B1J-E is available at Aetrix Electronics and suitable for stabilized power supplies, precision instrumentation references, and low-power sensor biasing requiring stable component supply with consistent low-noise performance and DO-35 package compatibility.

Supply support for HZ4B1J-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZ-L series, including HZ4B1J-E, was developed specifically for low-noise voltage reference applications in high-fidelity analog signal chains, emphasizing reduced diode noise, stable low-current regulation, and extended thermal operating range.

FAQ

What is the exact zener voltage range for HZ4B1J-E?

The HZ4B1J-E has a guaranteed zener voltage range of 5.5 V minimum to 5.8 V maximum, measured at a test current of 0.5 mA and ambient temperature of 25°C. This range reflects manufacturing tolerance and ensures predictable regulation in low-current reference designs where stability at microampere bias levels is essential. The HZ4B1J-E maintains this specification across its qualified operating temperature range.

Is HZ4B1J-E compatible with standard DO-35 footprints?

Yes, the HZ4B1J-E uses the DO-35 glass axial package (JEITA code GRZZ0002ZB-A), matching industry-standard DO-35 mechanical dimensions: body diameter 2.0 mm, overall length 26.0 mm, and lead spacing 4.2 mm. Its orange body with navy blue cathode band follows Renesas' HZ-L series marking convention, ensuring visual and physical compatibility with existing DO-35 assembly processes and PCB land patterns.

How does the noise performance of HZ4B1J-E compare to standard Zener diodes?

The HZ4B1J-E achieves approximately 1/3 to 1/10 the noise level of conventional HZ-series Zener diodes, as confirmed in Renesas documentation. This reduction stems from optimized silicon planar construction and process controls targeting low flicker and thermal noise - directly benefiting applications like precision ADC references and low-level amplifier biasing where noise floor dictates system resolution. The HZ4B1J-E's noise advantage is intrinsic and tested, not inferred.

What is the maximum reverse leakage current for HZ4B1J-E?

The HZ4B1J-E specifies a maximum reverse leakage current (I_R) of 1 μA at a reverse voltage (V_R) of 2.0 V and ambient temperature of 25°C. This low leakage supports high-impedance reference nodes and extends battery life in micropower systems. Leakage remains well-controlled up to the rated junction temperature of 175°C, per Renesas' absolute maximum ratings table.

Can HZ4B1J-E be used in temperature-varying environments?

Yes, the HZ4B1J-E is rated for junction temperatures up to 175°C and storage temperatures from −55°C to +175°C. Its zener voltage temperature coefficient near 5.6 V is approximately −0.04 %/°C (per Fig.2 of the datasheet), enabling predictable drift modeling in industrial and automotive environments. Thermal derating curves (Fig.3) confirm usable power dissipation down to ambient temperatures below 0°C, supporting wide-range deployment.