Renesas HZ4B3JTA-E

Overview

HZ4B3JTA-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 5.7 V, maximum power dissipation of 400 mW, zener impedance of 80 Ω at 0.5 mA, and operating junction temperature up to 175°C - used in reference supplies for ADCs, sensor signal conditioning, and low-drift bias networks.

For engineers reviewing the HZ4B3JTA-E datasheet, HZ4B3JTA-E pinout, HZ4B3JTA-E application, or HZ4B3JTA-E equivalent, key selection criteria include zener voltage tolerance (±0.3 V), low dynamic impedance, noise performance advantage over standard HZ series, and DO-35 package compatibility with through-hole PCB layouts requiring thermal stability and long-term voltage stability.

Technical Context

The HZ4B3JTA-E operates as a two-terminal voltage reference device using controlled avalanche and Zener breakdown mechanisms, with specified test current of 0.5 mA and maximum reverse current of 1 μA at VR = 2.0 V. Its low-noise design achieves approximately 1/3–1/10 the noise level of legacy HZ-series diodes.

It exhibits a zener voltage temperature coefficient of approximately −0.04 %/°C near 5.7 V, confirmed by Figure 2 of REJ03G0182-0300, and maintains stable regulation across ambient temperatures from −55°C to +175°C with derated power dissipation above 25°C per Figure 3.

Key Specifications

Pinout & Package

Package: DO-35 glass axial package (JEITA code GRZZ0002ZB-A), orange body with navy-blue cathode band, 2.0 mm diameter × 26.0 mm length, 0.13 g mass, rated for manual or wave soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode reference applications.

Compared with 1N4734A and BZX55-C5V6, the HZ4B3JTA-E delivers superior voltage accuracy (±0.3 V vs. ±5%), verified low-noise performance, and optimized 0.5 mA operating point - making it uniquely suited for battery-powered precision analog systems where bias current and spectral purity are constrained.

Availability

HZ4B3JTA-E is available at Aetrix Electronics and suitable for high-precision ADC reference, low-drift sensor biasing, and linear regulator feedback applications requiring stable component supply, traceable lot history, and long-term obsolescence management.

Supply support for HZ4B3JTA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog power devices, and timing solutions, with leadership in automotive, industrial, and infrastructure markets.

The HZ-L Series, including HZ4B3JTA-E, was designed specifically for low-noise, high-stability voltage reference applications in precision analog signal chains - targeting instrumentation, medical sensing, and high-resolution data conversion systems.

FAQ

What is the exact zener voltage range specified for HZ4B3JTA-E?

The HZ4B3JTA-E has a guaranteed zener voltage range of 5.4 V to 5.7 V at test current I_Z = 0.5 mA and T_a = 25°C, per Electrical Characteristics table on page 2 of REJ03G0182-0300. This 0.3 V tolerance reflects tight binning within the HZ-L family and is tighter than standard Zener diodes such as the 1N4734A (±5%). The HZ4B3JTA-E is therefore suitable for applications demanding stable, repeatable reference voltages without post-production trimming.

Does HZ4B3JTA-E support operation at elevated ambient temperatures?

Yes, the HZ4B3JTA-E is rated for junction temperatures up to 175°C and storage temperatures from −55°C to +175°C. Its power dissipation derates linearly above 25°C, maintaining 200 mW capability at 75°C and 100 mW at 125°C per Figure 3. This thermal robustness makes the HZ4B3JTA-E appropriate for under-hood automotive modules and industrial motor drives where ambient temperatures exceed 85°C - unlike many general-purpose Zeners limited to 150°C max junction temperature.

How does the noise performance of HZ4B3JTA-E compare to standard Zener diodes?

The HZ4B3JTA-E achieves approximately 1/3 to 1/10 the broadband voltage noise of the legacy HZ series, as stated in the Features section of REJ03G0182-0300. This low-noise characteristic stems from proprietary silicon planar processing and junction design, not merely filtering. In practice, this translates to measurable improvements in SNR for 16-bit+ ADCs and reduced audible hiss in audio preamp bias networks - a distinction not offered by generic Zeners like BZX55-C5V6, which lack published noise specifications.

What is the maximum reverse leakage current for HZ4B3JTA-E?

The HZ4B3JTA-E specifies a maximum reverse leakage current (I_R) of 1 μA at V_R = 2.0 V and T_a = 25°C. This low leakage ensures minimal error contribution in high-impedance reference divider networks and sensor excitation circuits. For comparison, many standard 5.6 V Zeners exhibit 5–50 μA leakage under identical conditions, making the HZ4B3JTA-E especially valuable in battery-powered or micro-power designs where standby current must remain below 10 μA.

Is HZ4B3JTA-E compatible with automated through-hole assembly processes?

Yes, the HZ4B3JTA-E uses the industry-standard DO-35 axial glass package (JEITA code GRZZ0002ZB-A), with 2.0 mm diameter and 26.0 mm length, fully compatible with standard wave soldering and selective soldering equipment. Its 0.13 g mass and mechanical dimensions align with IPC-7351 guidelines for axial components. The navy-blue cathode band provides unambiguous polarity marking for automated optical inspection (AOI), and the orange body color aids visual verification during manual rework - confirming full manufacturability in high-volume production environments.