Renesas HZ4B3RE-E

Overview

HZ4B3RE-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 5.7 V, 400 mW power dissipation, 80 Ω dynamic impedance at 0.5 mA test current, and DO-35 glass axial package. It serves as a stable reference in low-drift power supply feedback loops and sensor biasing networks.

For engineers reviewing the HZ4B3RE-E datasheet, HZ4B3RE-E pinout, HZ4B3RE-E application, or HZ4B3RE-E equivalent, key selection criteria include zener voltage tolerance (±0.3 V), low noise performance relative to standard HZ series, temperature coefficient behavior below 7 V, and compatibility with through-hole PCB assembly using DO-35 footprint.

Technical Context

This device operates as a two-terminal voltage reference where reverse-biased junction conduction establishes a stable breakdown voltage. Its low dynamic resistance (80 Ω) and reduced noise level-approximately 1/3 to 1/10 that of the legacy HZ series-enable high signal integrity in sensitive analog front-ends.

The HZ4B3RE-E exhibits a negative temperature coefficient typical of zener diodes below 5.6 V, but its specified 5.7 V nominal value places it near the zero-TC crossover point, yielding improved thermal stability in ambient-temperature-varying environments without external compensation.

Key Specifications

Pinout & Package

DO-35 glass axial package with cathode band (navy blue) marking; body color orange; total mass 0.13 g; lead spacing accommodates standard 2.54 mm pitch through-hole mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar zener reference applications.

Compared with 1N4734A and BZX55C5V6, the HZ4B3RE-E delivers superior voltage precision (±0.3 V vs. ±5%), lower noise for analog signal chains, and optimized thermal stability near the 5.6 V zero-TC point-making it preferred for metrology-grade references despite lower power rating.

Availability

HZ4B3RE-E is available at Aetrix Electronics and suitable for instrumentation amplifier reference, ADC voltage reference buffer, and low-drift power supply feedback applications requiring stable component supply, consistent parametric performance, and long-term availability in DO-35 packaging.

Supply support for HZ4B3RE-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. is a Japanese semiconductor manufacturer specializing in microcontrollers, analog mixed-signal devices, and power management ICs for industrial, automotive, and infrastructure markets.

The HZ-L Series was designed specifically for low-noise, high-stability voltage reference applications in precision analog systems-addressing limitations of earlier HZ-series diodes through improved junction processing and tighter parametric control.

FAQ

What is the exact zener voltage range for HZ4B3RE-E at 0.5 mA test current?

The HZ4B3RE-E has a guaranteed zener voltage range of 5.4 V to 6.0 V when measured at I_Z = 0.5 mA and T_a = 25°C. This ±0.3 V tolerance reflects tight binning within the HZ-L family and supports high-accuracy regulation without post-calibration trimming. The nominal 5.7 V value is centered in this range and is used for design calculations involving the HZ4B3RE-E.

Is HZ4B3RE-E compatible with automated through-hole insertion equipment?

Yes, the HZ4B3RE-E uses the standard DO-35 glass axial package with 2.54 mm lead spacing and 26 mm overall length, fully compliant with IPC-7351 Class B land patterns and common wave soldering and selective soldering profiles. Its 0.13 g mass and orange body color allow reliable optical recognition during automated placement, making the HZ4B3RE-E suitable for high-volume manufacturing.

How does the noise performance of HZ4B3RE-E compare to generic zener diodes?

The HZ4B3RE-E achieves approximately 1/3 to 1/10 the noise level of standard HZ-series zeners due to proprietary silicon planar processing and optimized junction geometry. This low-noise characteristic is verified per Renesas REJ03G0182-0300 test methodology and directly benefits applications like audio preamplifiers and precision ADC references where HZ4B3RE-E replaces noisier alternatives without circuit redesign.

Can HZ4B3RE-E be used in place of a 5.6 V zener diode?

The HZ4B3RE-E is rated at 5.7 V nominal and is not a direct substitute for a 5.6 V part unless system-level tolerance analysis confirms the 0.1 V difference falls within acceptable regulation margin. Its temperature coefficient is optimized near the 5.6 V zero-TC point, so the HZ4B3RE-E may actually provide better thermal stability than a true 5.6 V device in varying ambient conditions.

What is the maximum allowable reverse current before degradation of HZ4B3RE-E performance?

The HZ4B3RE-E is characterized up to 0.5 mA zener test current, with absolute maximum ratings specifying 400 mW total power dissipation. Sustained operation above 0.5 mA requires derating per the Fig.3 power vs. ambient temperature curve in REJ03G0182-0300. Exceeding 1 mA continuously risks accelerated parameter drift and increased noise-so the HZ4B3RE-E should be operated within its specified 0.5 mA test condition for guaranteed specification compliance.