Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas HZ4BLLTD-E

Part No.:
HZ4BLLTD-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
DO-204AH, DO-35, Axial
Datasheet:
AetrixHZ4BLLTD-E.pdf
Description:
DIODE ZENER 3.9V 250MW DO35
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

HZ4BLLTD-E from Renesas Electronics is a silicon planar Zener diode optimized for hard-knee, low-noise voltage reference applications at low currents (1 nA to 1 mA), with a nominal zener voltage of 3.9 V (min 3.7 V, max 4.1 V), dynamic impedance of 370 Ω at IZT = 2.0 mA, and temperature coefficient of –0.02 mV/°C - used in precision analog front-ends and sensor biasing circuits.

For engineers reviewing the HZ4BLLTD-E datasheet, HZ4BLLTD-E pinout, HZ4BLLTD-E application, or HZ4BLLTD-E equivalent, this page delivers verified electrical specs, DO-35 package details, cathode/anode terminal mapping, low-current noise performance data, and direct alternative options for voltage reference design validation.

Technical Context

The HZ4BLLTD-E implements a hard-knee Zener breakdown structure with semi-logarithmic VZ–IZ linearity from 1 nA to 1 mA, enabling stable reference generation where conventional Zeners exhibit excessive knee softness. Its low dynamic impedance (370 Ω typ. at 2 mA) and ultra-low noise support high-accuracy DC sensing.

Designed for operation at low test currents (IZK = 0.5 µA max, IZT = 2.0 mA), it achieves tighter voltage tolerance (±0.2 V) and reduced temperature drift (–0.02 mV/°C) versus standard Zeners - critical for battery-powered instrumentation and calibration circuitry.

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage (VZ)3.7 V min to 4.1 V max at IZ = 0.5 mA - defines tight 3.9 V nominal reference with ±5.1% tolerance for stable low-power biasing.
Dynamic Impedance (ZZT)370 Ω typical at IZT = 2.0 mA - ensures minimal output voltage shift under load variation in precision references.
Reverse Current (IR)≤100 nA at VR = 1.0 V - enables ultra-low leakage in high-impedance feedback networks and energy-harvesting circuits.
Temperature Coefficient (γZ)–0.02 mV/°C - delivers near-zero drift over industrial temperature range, reducing calibration burden in portable test gear.
Power Dissipation (Pd)250 mW maximum - supports continuous operation in DO-35 packages without forced cooling in ambient ≤70°C.
Junction Temperature (Tj)175°C maximum - allows reliable operation in thermally constrained PCB layouts and sealed enclosures.

Pinout & Package

Package: DO-35 (JEITA code GRZZ0002ZB-A, Renesas code SC-40), glass axial leaded case with navy blue cathode band and verdure body color. Mass: 0.13 g. Dimensions: φD = 2.0 mm max, L = 26.0 mm min, E = 4.2 mm.

Pin/TerminalCircuit RoleDesign Meaning
1 (Cathode)Zener voltage reference outputConnected to regulated node; polarity must be observed to avoid reverse conduction failure.
2 (Anode)Reference ground returnServes as current sink path; requires low-impedance connection to system ground for stable regulation.

Key Features

FeatureDesign Value
Hard-knee breakdownVZ–IZ curve exhibits sharp transition at ~0.05 mA, minimizing uncertainty in low-current reference points.
Low-noise operationApproximately 1/10 lower noise than standard Zeners in 1 nA–1 mA region - improves SNR in ADC reference buffers.
Semi-logarithmic linearity∆VZ1 = 0.5 V max (0.05 mA → 0.5 mA), ∆VZ2 = 0.6 V max (0.001 mA → 0.05 mA) - enables predictable scaling across decades of current.
Low-temperature coefficient–0.02 mV/°C at 3.9 V - reduces thermal drift to <0.2 mV over 0°C–70°C, eliminating need for external compensation.

Applications

Portable Multimeter ReferenceThermocouple Cold-Junction Compensation

Use Scenario: Battery-powered handheld multimeter requiring stable 3.9 V reference for 16-bit ADC full-scale calibration.

IC Role / Device Role / Timing Role: Precision voltage reference diode providing low-drift, low-noise DC bias to ADC reference input.

Use Value: Enables ±0.05% measurement accuracy over –10°C to +50°C without trimming, leveraging –0.02 mV/°C TC and 370 Ω ZZT.

Use Scenario: Industrial temperature transmitter using K-type thermocouple with cold-junction compensation in microcontroller-based signal chain.

IC Role / Device Role / Timing Role: Low-current Zener reference supplying stable bias to op-amp circuit measuring thermistor voltage.

Use Value: Delivers <100 nA leakage at 1 V reverse bias, preventing error injection into high-impedance thermistor bridge.

Medical Sensor Signal ConditioningIoT Node Voltage Monitoring

Use Scenario: Wearable ECG front-end requiring ultra-low-noise 3.9 V reference for amplifier gain-setting resistors.

IC Role / Device Role / Timing Role: Low-noise Zener diode establishing precision bias point for rail-to-rail op-amps in analog signal path.

Use Value: Achieves 1/10 noise vs. standard Zeners, directly improving input-referred noise floor below 1 µVRMS.

Use Scenario: LPWAN sensor node monitoring Li-ion battery voltage via MCU ADC with minimal quiescent current budget.

IC Role / Device Role / Timing Role: Low-power Zener reference operating at 100 nA–1 µA to enable accurate battery state-of-charge estimation.

Use Value: Maintains 3.9 V regulation down to 0.5 µA IZK, supporting wake-up ADC sampling without dedicated LDO.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N5226BRLGZener voltage 3.3 V (±5%), higher ZZT = 600 Ω, TC = +2 mV/°C - less stable at low current.Acceptable for general-purpose 3.3 V biasing but unsuitable for sub-1 µA precision references.Select only when cost sensitivity outweighs drift/noise requirements and 3.3 V suffices.
BZX55C3V9Zener voltage 3.9 V (±5%), ZZT = 90 Ω at 5 mA, but IR = 1 µA at 1 V - 10× higher leakage than HZ4BLLTD-E.Functional in power supply feedback loops but degrades high-Z sensor interfaces due to leakage-induced offset.Prefer only in non-critical, higher-current (>1 mA) regulation where leakage is not a factor.

Compared with 1N5226BRLG and BZX55C3V9, the HZ4BLLTD-E provides superior low-current stability (0.5 µA IZK), lower noise, and near-zero TC - making it uniquely suited for battery-operated precision analog systems where reference integrity dominates power or cost constraints.

Availability

HZ4BLLTD-E is available at Aetrix Electronics and suitable for portable instrumentation, medical sensor modules, IoT battery monitoring, and industrial temperature transmitters requiring stable component supply with traceable sourcing and long-term lifecycle support.

Supply support for HZ4BLLTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer applications.

The HZ-LL Series was designed specifically for low-noise, hard-knee Zener reference applications demanding high linearity and ultra-low drift at microamp-level currents - targeting precision analog signal chains in portable and battery-constrained systems.

FAQ

What is the nominal zener voltage of the HZ4BLLTD-E and its tolerance range?

The HZ4BLLTD-E has a nominal zener voltage of 3.9 V, with a guaranteed range of 3.7 V to 4.1 V at IZ = 0.5 mA. This ±0.2 V tolerance supports precision biasing in analog circuits where tight DC reference stability is required without post-manufacturing trimming. The HZ4BLLTD-E achieves this via a hard-knee Zener structure optimized for low-current operation.

Does the HZ4BLLTD-E support operation at very low reverse currents, and what is its minimum specified test current?

Yes, the HZ4BLLTD-E is characterized down to 1 nA and specifies IZK (knee current) ≤ 0.5 µA - enabling stable regulation in ultra-low-power applications such as energy-harvesting sensors and wake-up ADC references. Its semi-logarithmic VZ–IZ behavior remains linear from 1 nA to 1 mA, a key differentiator from standard Zeners. This capability is intrinsic to the HZ4BLLTD-E's planar silicon process.

What is the dynamic impedance of the HZ4BLLTD-E, and why does it matter for reference stability?

The HZ4BLLTD-E has a typical dynamic impedance (ZZT) of 370 Ω at IZT = 2.0 mA. This value determines how much the output voltage shifts under varying load current - lower ZZT means better regulation. At 370 Ω, the HZ4BLLTD-E delivers <0.74 mV shift per 2 µA load change, critical for maintaining ADC reference accuracy in noisy or dynamically loaded systems. This spec is measured and guaranteed for the HZ4BLLTD-E.

Is the HZ4BLLTD-E RoHS compliant and suitable for industrial temperature ranges?

Yes, the HZ4BLLTD-E meets RoHS Directive requirements and is rated for operation across –55°C to +175°C storage and 0°C to +70°C ambient operating range. Its junction temperature limit is 175°C, and its temperature coefficient of –0.02 mV/°C ensures minimal drift in industrial environments. Renesas documents confirm this compliance and rating for the HZ4BLLTD-E in the REJ03G0183-0300 datasheet.

How is the cathode identified on the HZ4BLLTD-E DO-35 package?

The cathode of the HZ4BLLTD-E is marked by a navy blue band on the glass DO-35 body, consistent with Renesas' HZ-LL Series packaging standard. Pin 1 (cathode) is the lead adjacent to this band; Pin 2 (anode) is the opposite lead. The body color is verdure (greenish), and mechanical dimensions match JEITA code GRZZ0002ZB-A - all confirmed for the HZ4BLLTD-E in the official Renesas datasheet.

HZ4BLLTD-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
DO-204AH, DO-35, Axial
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
3.9 V
Tolerance:
±5.13%
Power - Max:
250 mW
Impedance (Max) (Zzt):
370 Ohms
Current - Reverse Leakage @ Vr:
100 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
DO-35

HZ4BLLTD-E FAQ

1.How can I place an order for HZ4BLLTD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZ4BLLTD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZ4BLLTD-E reliable?

The price and inventory of HZ4BLLTD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZ4BLLTD-E is usually 5 days.

3.What payment methods are accepted for HZ4BLLTD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZ4BLLTD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZ4BLLTD-E?

HZ4BLLTD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZ4BLLTD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZ4BLLTD-E?

For technical support, including HZ4BLLTD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZ4BLLTD-E requirements.

6.How does Aetrix verify that HZ4BLLTD-E is sourced from the original manufacturer or authorized distributors?

All HZ4BLLTD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZ4BLLTD-E meets industry standards.

7.What is the process for return or replacement of HZ4BLLTD-E?

All HZ4BLLTD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZ4BLLTD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZ4BLLTD-E part is unused and in its original packaging.

Return procedure for HZ4BLLTD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

HZ4BLLTD-E Tags

  • HZ4BLLTD-E
  • HZ4BLLTD-E PDF
  • HZ4BLLTD-E Datasheet
  • HZ4BLLTD-E Specifications
  • HZ4BLLTD-E Images
  • Renesas
  • Renesas HZ4BLLTD-E
  • Buy HZ4BLLTD-E
  • HZ4BLLTD-E Price
  • HZ4BLLTD-E Distributor
  • HZ4BLLTD-E Supplier
  • HZ4BLLTD-E Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER