Renesas HZ4C3-E

Overview

HZ4C3-E from Renesas is a silicon planar Zener diode designed for voltage regulation in low-power stabilized DC power supplies, featuring a nominal zener voltage of 4.2–4.4 V at 5 mA test current, 500 mW maximum power dissipation, and dynamic resistance of ≤100 Ω under specified conditions.

For engineers reviewing the HZ4C3-E datasheet, HZ4C3-E pinout, HZ4C3-E application, or HZ4C3-E equivalent, this part serves as a precision reference in analog sensing, overvoltage protection circuits, and low-current biasing networks where tight voltage tolerance and thermal stability are required.

Technical Context

The HZ4C3-E operates as a two-terminal shunt regulator with cathode-anode polarity, relying on controlled reverse breakdown to maintain stable output voltage across varying load currents. Its DO-35 glass package supports through-hole mounting and ensures reliable thermal conduction up to 175°C junction temperature.

Electrical behavior is defined by DC-tested parameters: zener voltage tolerance (±0.2 V), reverse leakage current ≤5 µA at VR = 0.5 V, and temperature coefficient optimized for mid-range voltages (~−0.02 to +0.02 %/°C per Fig.2). No series resistance or integrated compensation is present.

Key Specifications

Pinout & Package

DO-35 glass axial package with cathode identified by navy blue band; leads are unmarked but follow standard diode orientation: cathode (banded end) and anode (unbanded end).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Compared with 1N4733A and BZX55-C4V3, the HZ4C3-E offers a narrower nominal V_Z spread (±0.1 V vs. ±5%), lower dynamic impedance at 5 mA, and documented temperature coefficient behavior near 4.3 V-making it preferable for precision analog designs where initial accuracy and thermal predictability outweigh generic availability.

Availability

HZ4C3-E is available at Aetrix Electronics and suitable for voltage reference, overvoltage protection, and low-power bias generation requiring stable component supply across industrial control, sensor interface, and embedded peripheral subsystems.

Supply support for HZ4C3-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog power devices, and timing solutions for industrial, automotive, and infrastructure markets.

The HZ Series Zener diodes were developed to deliver high-precision, thermally stable voltage references in compact DO-35 packages for use in cost-sensitive yet performance-critical analog subsystems.

FAQ

What is the exact zener voltage range specified for HZ4C3-E?

The HZ4C3-E has a guaranteed zener voltage range of 4.2 V to 4.4 V when tested at I_Z = 5 mA and T_a = 25°C. This 0.2 V span reflects its "C3" grade designation within the HZ Series and is tighter than standard ±5% Zener tolerances found in many alternatives.

Is HZ4C3-E compatible with lead-free reflow soldering processes?

The HZ4C3-E uses a DO-35 glass package rated for wave and hand soldering per JEDEC standards. While not designed for reflow, its glass body withstands peak temperatures up to 260°C for ≤10 seconds-making it compatible with selective reflow or hybrid assembly where localized heating is controlled.

Does HZ4C3-E have a specified temperature coefficient?

Yes-the HZ4C3-E exhibits a zener voltage temperature coefficient near zero at ~4.3 V, as confirmed by Figure 2 in the official datasheet (REJ03G0180-0600 Rev.6.00). Measured values fall between −0.02 %/°C and +0.02 %/°C, making it suitable for applications requiring minimal thermal drift.

Can HZ4C3-E be used in series or parallel configurations?

No-HZ4C3-E is a single-element Zener diode intended for shunt regulation only. Series connection introduces mismatched thermal coefficients and unpredictable breakdown sharing; parallel use risks current hogging due to V_Z dispersion. Use discrete regulators or dedicated ICs for multi-diode topologies.

What is the maximum reverse leakage current for HZ4C3-E at 0.5 V?

The maximum reverse leakage current for HZ4C3-E is 5 µA when measured at V_R = 0.5 V and T_a = 25°C. This low leakage supports ultra-low-power applications such as battery-backed sensor nodes where standby current must remain below 10 µA.