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Renesas HZ4HB3-E
- Part No.:
- HZ4HB3-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZ4HB3-E.pdf
- Description:
- DIODE ZENER
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
HZ4HB3-E from Renesas is a silicon planar Zener diode engineered for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 5.6 V (min 5.5 V, max 5.8 V), 400 mW power dissipation, 80 Ω dynamic resistance at 0.5 mA test current, and DO-35 glass package with navy-blue cathode band. It serves in stabilized power supplies and reference circuits where low noise and tight voltage tolerance are critical.
For engineers reviewing the HZ4HB3-E datasheet, HZ4HB3-E pinout, HZ4HB3-E application, or HZ4HB3-E equivalent, key selection criteria include zener voltage accuracy (±0.3 V), low dynamic impedance (80 Ω), low leakage (<1 μA at VR = 2.0 V), thermal stability (−0.04 %/°C typical), and compatibility with through-hole PCB assembly using DO-35 footprint.
Technical Context
The HZ4HB3-E operates as a two-terminal shunt regulator with DC-tested zener characteristics, optimized for low-noise performance-its noise level is approximately 1/3 to 1/10 that of standard HZ-series diodes. It maintains stable regulation across ambient temperatures from −55°C to +175°C with a maximum junction temperature of 175°C.
Its zener voltage exhibits a negative temperature coefficient near 5.6 V (≈ −0.04 %/°C), and its dynamic resistance is specified at 80 Ω under 0.5 mA zener current, supporting stable reference generation in low-current bias networks and feedback paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 5.5 V min to 5.8 V max at IZ = 0.5 mA - ensures tight regulation window for 5.6 V nominal references |
| Power Dissipation (Pd) | 400 mW at Ta = 25°C - supports continuous operation in compact through-hole designs without forced cooling |
| Dynamic Resistance (rd) | 80 Ω max at IZ = 0.5 mA - minimizes output voltage variation under load transients in feedback loops |
| Reverse Current (IR) | <1 μA max at VR = 2.0 V - reduces error current in high-impedance reference nodes |
| Junction Temperature (Tj) | 175°C max - enables reliable operation in industrial environments with elevated ambient temperatures |
| Package | DO-35 glass axial - provides hermetic sealing and proven thermal/mechanical reliability for legacy and space-constrained layouts |
Pinout & Package
DO-35 glass axial package with orange body color and navy-blue cathode band. Cathode terminal marked by band; anode is unmarked end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Banded End) | Cathode | Connected to regulated output node; sinks current during zener conduction |
| 2 (Unbanded End) | Anode | Connected to ground or common reference; completes shunt regulation path |
Key Features
| Feature | Design Value |
|---|---|
| Low-noise zener operation | Noise level ≈ 1/3–1/10 that of standard HZ series - critical for audio preamps and sensor signal conditioning |
| Tight zener voltage tolerance | ±0.3 V at 5.6 V nominal - enables accurate voltage referencing without post-calibration trimming |
| Low dynamic impedance | 80 Ω max at 0.5 mA - improves line and load regulation in low-power feedback networks |
| High thermal stability | Temperature coefficient ≈ −0.04 %/°C - minimizes drift over −55°C to +125°C operating range |
Applications
| Audio Signal Conditioning | Precision Reference Supply |
|---|---|
Use Scenario: Low-noise DC biasing of op-amp inputs and JFET gates in high-fidelity microphone preamplifiers. IC Role / Device Role: Shunt voltage reference providing stable 5.6 V node with minimal added noise floor. Use Value: Enables >110 dB SNR by suppressing diode-generated broadband noise otherwise introduced into sensitive analog paths. | Use Scenario: Generating a stable 5.6 V reference for 16-bit ADCs and DACs in data acquisition systems. IC Role / Device Role: Primary voltage reference source in ratiometric measurement circuits requiring <0.1% initial accuracy. Use Value: Delivers ±0.3 V tolerance and <1 μA leakage, reducing gain error and offset drift in precision converter front-ends. |
| Industrial Sensor Excitation | Regulated Power Monitor |
Use Scenario: Exciting strain-gauge Wheatstone bridges in load-cell interfaces operating across −40°C to +85°C. IC Role / Device Role: Temperature-compensated excitation voltage source maintaining bridge bias within ±0.5% over temperature. Use Value: −0.04 %/°C TC and 80 Ω rd ensure excitation stability despite supply ripple and thermal cycling. | Use Scenario: Monitoring 5 V rail integrity in programmable logic controllers using comparator-based undervoltage detection. IC Role / Device Role: Stable threshold reference for voltage supervisor ICs detecting deviations beyond ±2%. Use Value: Tight 5.5–5.8 V VZ window allows precise trip-point setting without external resistor dividers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4734A | VZ = 5.6 V ±5%, rd = 5 Ω typical, Pd = 1 W, DO-41 package | Higher power rating but wider voltage tolerance and higher noise than HZ4HB3-E | Select when higher power handling is required and tighter voltage tolerance is not critical |
| BZX55-C5V6 | VZ = 5.6 V ±5%, rd = 10 Ω typical, Pd = 500 mW, DO-35 package | Lower noise than 1N4734A but still higher than HZ-L series; no published noise reduction spec | Choose for DO-35 compatibility where ultra-low noise is secondary to cost and availability |
Compared with 1N4734A and BZX55-C5V6, the HZ4HB3-E delivers superior noise performance and tighter initial voltage tolerance in the same DO-35 form factor, making it preferred for high-precision analog references where spectral purity and stability outweigh raw power capacity.
Availability
HZ4HB3-E is available at Aetrix Electronics and suitable for precision reference supplies, low-noise audio biasing, industrial sensor excitation, and regulated power monitoring requiring stable component supply and long-term obsolescence management.
Supply support for HZ4HB3-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Technology Corp. is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.
The HZ-L Series was designed specifically for low-noise voltage reference applications in high-fidelity analog systems, emphasizing reduced diode noise, tight zener voltage tolerance, and stable dynamic impedance across temperature.
FAQ
What is the exact zener voltage range for HZ4HB3-E?
The HZ4HB3-E has a guaranteed zener voltage range of 5.5 V minimum to 5.8 V maximum when tested at IZ = 0.5 mA and Ta = 25°C. This 0.3 V span reflects its tight tolerance design for precision reference use, distinct from broader-tolerance Zeners like the 1N4734A (±5%). The value is DC-tested per Renesas specification REJ03G0182-0300.
Is HZ4HB3-E suitable for surface-mount assembly?
No, the HZ4HB3-E uses a DO-35 glass axial package with leads intended for through-hole mounting only. Its mechanical construction and JEITA code GRZZ0002ZB-A confirm axial lead configuration. For SMT alternatives, consider Renesas' HZ-L series SMD variants such as the HZ4HB3-EL, which shares electrical specs but uses SC-76 (SOD-323) packaging.
How does the noise performance of HZ4HB3-E compare to standard Zener diodes?
The HZ4HB3-E achieves approximately 1/3 to 1/10 the noise level of conventional HZ-series Zeners, as stated in Renesas documentation. This is achieved via optimized silicon planar structure and low-leakage processing. Measured noise is significantly lower in the 10 Hz–10 kHz band, making HZ4HB3-E appropriate for audio preamps and precision instrumentation where diode-generated noise degrades SNR.
What is the maximum reverse current specification for HZ4HB3-E?
The HZ4HB3-E specifies a maximum reverse current (IR) of 1 μA when tested at VR = 2.0 V and Ta = 25°C. This low leakage supports high-impedance reference nodes and minimizes error current in precision divider networks. It is substantially lower than typical 5.6 V Zeners such as the BZX55-C5V6 (IR ≤ 10 μA at VR = 1 V).
Does HZ4HB3-E have a specified temperature coefficient?
Yes, the HZ4HB3-E exhibits a zener voltage temperature coefficient (γZ) of approximately −0.04 %/°C near 5.6 V, as shown in Figure 2 of the Renesas datasheet REJ03G0182-0300. This negative TC is typical for Zeners in the 5–6 V range and enables predictable, linear drift behavior over temperature-valuable for compensated reference designs.
HZ4HB3-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZ4HB3-E FAQ
1.How can I place an order for HZ4HB3-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZ4HB3-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZ4HB3-E reliable?
The price and inventory of HZ4HB3-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZ4HB3-E is usually 5 days.
3.What payment methods are accepted for HZ4HB3-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZ4HB3-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZ4HB3-E?
HZ4HB3-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZ4HB3-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZ4HB3-E?
For technical support, including HZ4HB3-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZ4HB3-E requirements.
6.How does Aetrix verify that HZ4HB3-E is sourced from the original manufacturer or authorized distributors?
All HZ4HB3-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZ4HB3-E meets industry standards.
7.What is the process for return or replacement of HZ4HB3-E?
All HZ4HB3-E units undergo pre-shipment inspection (PSI). If there is an issue with HZ4HB3-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZ4HB3-E part is unused and in its original packaging.
Return procedure for HZ4HB3-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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