Renesas HZ5C1J-E

Overview

HZ5C1J-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 5.8 V to 6.1 V, dynamic resistance of 60 Ω at 0.5 mA, maximum power dissipation of 400 mW, and junction temperature rating up to 175°C - deployed in reference voltage sources and low-drift sensor signal conditioning.

For engineers reviewing the HZ5C1J-E datasheet, HZ5C1J-E pinout, HZ5C1J-E application, or HZ5C1J-E equivalent, key selection criteria include zener voltage tolerance (±0.3 V), low noise performance (1/3–1/10 that of standard HZ series), DO-35 package compatibility, and thermal stability across −55°C to +175°C storage range.

Technical Context

This Zener diode operates in reverse breakdown mode with DC-tested zener voltage specification and exhibits low leakage current (<1 μA at VR = 2.0 V) and low zener impedance - critical for stable biasing in low-power instrumentation amplifiers and ADC reference circuits.

Its noise reduction architecture leverages planar diffusion process and optimized junction design, achieving significantly lower voltage noise than legacy HZ-series devices while maintaining compatibility with standard DO-35 PCB footprints and reflow profiles.

Key Specifications

Pinout & Package

DO-35 glass axial package with 2-terminal configuration: hermetically sealed glass body (orange), navy blue cathode band marking, 2.0 mm diameter, 26.0 mm overall length, 0.5 mm lead diameter, and 4.2 mm lead spacing (E dimension). Mass: 0.13 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with 1N4734A and BZX55-C6V2, the HZ5C1J-E delivers tighter voltage tolerance (±0.3 V vs. ±5%), quantifiably lower noise, and superior thermal coefficient stability - making it the preferred choice for metrology-grade references despite its lower power rating.

Availability

HZ5C1J-E is available at Aetrix Electronics and suitable for high-precision reference sources, low-drift sensor signal conditioning, and industrial power supply feedback circuits requiring stable component supply with traceable sourcing and long-lifecycle support.

Supply support for HZ5C1J-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. is a Japanese semiconductor manufacturer specializing in microcontrollers, analog mixed-signal ICs, and power management solutions for industrial, automotive, and infrastructure markets.

The HZ-L Series Zener diodes were designed specifically for low-noise, high-stability voltage reference applications in precision analog systems - emphasizing reduced voltage noise, tight V_Z tolerance, and robust thermal performance.

FAQ

What is the exact zener voltage range specified for HZ5C1J-E?

The HZ5C1J-E has a guaranteed zener voltage range of 5.8 V minimum to 6.1 V maximum when tested at I_Z = 0.5 mA and T_a = 25°C. This ±0.15 V tolerance supports high-accuracy reference designs without post-manufacturing trimming. The device belongs to the HZ-L Series' "C1" variant group, which consistently delivers this narrow V_Z window across production lots.

Is HZ5C1J-E compatible with standard DO-35 footprint layouts?

Yes, HZ5C1J-E uses the JEITA-standard DO-35 package (Renesas code GRZZ0002ZB-A) with 4.2 mm lead spacing (E), 2.0 mm body diameter, and 26.0 mm overall length - fully compatible with industry-standard DO-35 land patterns and wave/reeflow soldering processes. Its orange body and navy blue cathode band match visual identification conventions used in automated assembly.

How does the noise performance of HZ5C1J-E compare to conventional Zener diodes?

HZ5C1J-E achieves approximately 1/3 to 1/10 the voltage noise of standard HZ-series Zeners due to its planar silicon process and optimized junction geometry. This is confirmed in Renesas' REJ03G0182-0300 characterization data and directly translates to improved signal-to-noise ratio in precision references - especially critical below 10 Hz where 1/f noise dominates.

What is the maximum allowable reverse current before regulation degrades in HZ5C1J-E?

HZ5C1J-E maintains stable regulation up to its rated test current of 0.5 mA, with dynamic resistance specified at that point. Operation beyond 1 mA is not recommended - the datasheet specifies I_Z = 0.5 mA as the standard test condition, and exceeding this may increase r_d and thermal drift. For sustained operation, keep average current ≤0.5 mA unless derated per Fig.3 power vs. ambient temperature curve.

Does HZ5C1J-E support operation at elevated ambient temperatures?

Yes, HZ5C1J-E is rated for junction temperatures up to 175°C and storage from −55°C to +175°C. Its zener voltage temperature coefficient is < ±0.06 %/°C (per Fig.2), enabling stable performance in industrial enclosures. Derating is required above 25°C ambient - e.g., at 70°C, max power drops to ~280 mW per Fig.3's linear derating curve.