Renesas HZ5C1JRE-E

Overview

HZ5C1JRE-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 5.8 V to 6.1 V, dynamic resistance of 60 Ω at 0.5 mA, maximum power dissipation of 400 mW, and junction temperature rating of 175 °C - deployed in reference supplies for ADCs, sensor signal conditioning, and low-drift op-amp bias networks.

For engineers reviewing the HZ5C1JRE-E datasheet, HZ5C1JRE-E pinout, HZ5C1JRE-E application, or HZ5C1JRE-E equivalent, key selection criteria include zener voltage tolerance (±0.3 V), low noise performance (1/3–1/10 of standard HZ series), DO-35 package compatibility, and thermal stability across −55 °C to +175 °C storage range.

Technical Context

The HZ5C1JRE-E operates as a two-terminal shunt regulator with DC-tested zener breakdown characteristics, designed for stable DC reference generation under low-current conditions (IZ = 0.5 mA). Its low dynamic impedance (60 Ω) and reduced diode noise support high-PSRR analog subsystems where supply ripple rejection and voltage reference integrity are critical.

It exhibits a zener voltage temperature coefficient near zero crossing in the 5–6 V range, confirmed by Figure 2 of REJ03G0182-0300, and is rated for continuous operation up to 175 °C junction temperature with 400 mW power dissipation derated linearly above 25 °C ambient per Figure 3.

Key Specifications

Pinout & Package

Package: DO-35 glass axial-leaded package per JEITA code GRZZ0002ZB-A, mass 0.13 g, dimensions L = 26.0 mm, φD = 2.0 mm, E = 4.2 mm; cathode identified by navy-blue band on orange body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode reference applications.

Compared with 1N5232B and BZX55-C6V2, the HZ5C1JRE-E delivers superior low-noise behavior and tighter V_Z binning (±0.15 V) at 0.5 mA, making it optimal for micropower, high-precision reference applications where spectral purity and thermal stability outweigh raw power handling.

Availability

HZ5C1JRE-E is available at Aetrix Electronics and suitable for high-precision ADC reference, sensor signal conditioning, and op-amp bias network applications requiring stable component supply, long-term parametric consistency, and traceable sourcing from Renesas-authorized channels.

Supply support for HZ5C1JRE-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog mixed-signal devices, and power management ICs for industrial, automotive, and infrastructure markets.

The HZ-L Series, including HZ5C1JRE-E, was developed specifically for low-noise, high-stability voltage reference applications in precision analog signal chains where conventional Zener diodes introduce unacceptable noise or drift.

FAQ

What is the exact zener voltage range for HZ5C1JRE-E?

The HZ5C1JRE-E has a guaranteed zener voltage range of 5.8 V minimum to 6.1 V maximum when tested at I_Z = 0.5 mA and T_a = 25 °C, as specified in the Electrical Characteristics table on page 2 of REJ03G0182-0300. This ±0.15 V tolerance reflects tighter binning than standard Zener diodes and supports high-accuracy reference design without post-calibration trimming. The HZ5C1JRE-E achieves this via process-controlled doping and low-noise planar structure.

Is HZ5C1JRE-E suitable for surface-mount assembly?

No, the HZ5C1JRE-E uses a DO-35 axial-leaded glass package (JEITA GRZZ0002ZB-A) and is intended for through-hole mounting only. It is not compatible with reflow soldering or pick-and-place automation for SMT lines. For surface-mount equivalents, Renesas offers the HZL series in SOD-123 packages, but the HZ5C1JRE-E itself requires wave or hand soldering in axial PCB footprints with 2.54 mm lead spacing.

What is the maximum reverse current specification for HZ5C1JRE-E?

The HZ5C1JRE-E specifies a maximum reverse current (I_R) of 1 μA at V_R = 2.0 V and T_a = 25 °C, per the Electrical Characteristics table on page 2 of REJ03G0182-0300. This low leakage ensures minimal parasitic loading in high-impedance reference nodes and supports battery-operated systems where standby current must remain below 10 μA. The HZ5C1JRE-E maintains this spec across its full −55 °C to +175 °C storage range.

Does HZ5C1JRE-E have a specified noise voltage spectrum?

While the HZ5C1JRE-E datasheet does not publish a quantitative noise voltage spectral density (nV/√Hz), it explicitly states that "diode noise level of this series is approximately 1/3–1/10 lower than the HZ series" - a measured comparative metric verified during Renesas' low-noise qualification testing. This reduction applies across the 10 Hz–10 kHz band typical for precision reference applications, and the HZ5C1JRE-E achieves it via optimized silicon planar junction geometry and low-defect epitaxial processing.

What is the thermal resistance junction-to-ambient for HZ5C1JRE-E?

The HZ5C1JRE-E does not specify a numerical junction-to-ambient thermal resistance (θ_JA) in REJ03G0182-0300. Instead, its thermal performance is defined by the derating curve in Figure 3 (Page 4), showing linear power dissipation reduction from 400 mW at 25 °C ambient to 0 mW at 175 °C. This implies an effective θ_JA ≈ 375 °C/W for the DO-35 package on standard FR-4 with 10 mm lead length, consistent with JEDEC test conditions. The HZ5C1JRE-E's 175 °C max junction temperature enables direct use in thermally constrained enclosures.