Renesas HZ5C3RE-E

Overview

HZ5C3RE-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 6.1 V to 6.4 V, dynamic resistance of 60 Ω at 0.5 mA, maximum power dissipation of 400 mW, and junction temperature rating of 175°C - deployed in reference voltage generators and low-drift sensor biasing.

For engineers reviewing the HZ5C3RE-E datasheet, HZ5C3RE-E pinout, HZ5C3RE-E application, or HZ5C3RE-E equivalent, key selection criteria include zener voltage tolerance (±0.3 V), low noise performance relative to standard HZ series, DO-35 package compatibility, and thermal stability across −55°C to +175°C storage range.

Technical Context

The HZ5C3RE-E operates as a two-terminal shunt regulator with DC-tested zener breakdown characteristics, designed for stable DC reference generation rather than transient suppression or AC clamping. Its low dynamic impedance (60 Ω) and reduced noise level (≈1/3–1/10 of HZ series) stem from optimized silicon planar junction fabrication.

It exhibits a zener voltage temperature coefficient near zero in its 6.1–6.4 V range, confirmed by Figure 2 in REJ03G0182-0300, and maintains rated power dissipation up to 70°C ambient before linear derating per Figure 3 - supporting use in thermally constrained PCB layouts without forced cooling.

Key Specifications

Pinout & Package

DO-35 glass axial package with 2 mm diameter body, 26 mm length, and 0.13 g mass; cathode identified by navy-blue band on orange body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode reference applications.

Compared with 1N4735A and BZX55-C6V2, the HZ5C3RE-E delivers verified low-noise performance in a DO-35 footprint with tighter V_Z tolerance and known thermal coefficient behavior - making it preferred for metrology-grade references and audio signal chains where noise spectral density dominates system SNR.

Availability

HZ5C3RE-E is available at Aetrix Electronics and suitable for precision instrumentation, low-noise audio electronics, sensor signal conditioning, and industrial analog I/O modules requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for HZ5C3RE-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog power devices, and timing solutions for industrial, automotive, and infrastructure markets.

The HZ-L Series was developed specifically for low-noise, high-stability voltage reference applications in test equipment and precision analog systems - emphasizing zener voltage consistency, thermal coefficient control, and noise reduction over raw power handling.

FAQ

What is the exact zener voltage range for HZ5C3RE-E at 0.5 mA test current?

The HZ5C3RE-E has a guaranteed zener voltage range of 6.1 V minimum to 6.4 V maximum when tested at I_Z = 0.5 mA, as specified in the Electrical Characteristics table on page 2 of REJ03G0182-0300. This 0.3 V span reflects tight binning for precision reference use, and the device is part of the HZ5CxL subgroup within the HZ-L Series. The HZ5C3RE-E must be operated within this range to meet its low-noise and low-r_d specifications.

Does HZ5C3RE-E have a documented noise specification, and how does it compare to standard Zener diodes?

Yes - the HZ5C3RE-E datasheet states its noise level is approximately 1/3 to 1/10 that of the standard HZ series, achieved through proprietary silicon planar junction processing. Unlike generic Zeners such as 1N4735A or BZX55-C6V2, the HZ-L Series provides this comparative noise reduction as a defined family feature. The HZ5C3RE-E inherits this benefit directly, making it suitable for applications where broadband noise below 100 kHz impacts measurement fidelity or audio quality.

What is the maximum allowable power dissipation for HZ5C3RE-E at 70°C ambient temperature?

Per Figure 3 on page 4 of REJ03G0182-0300, the HZ5C3RE-E's power dissipation derates linearly above 70°C ambient, with a maximum of 400 mW at 25°C and zero dissipation at 175°C. At exactly 70°C ambient, the HZ5C3RE-E supports 280 mW - calculated using the 4 mW/°C slope from the graph. This derating must be applied in thermal design to avoid exceeding the 175°C junction limit, especially in enclosed or high-density PCB layouts.

Is HZ5C3RE-E compatible with automated through-hole assembly, and what are its lead pitch and diameter?

Yes - the HZ5C3RE-E uses the standard DO-35 package with 2.0 mm lead diameter and 10 mm lead spacing (center-to-center), matching JEDEC DO-35 mechanical dimensions. Its 26 mm overall length and 2 mm body diameter are compatible with standard axial component feeders and wave soldering profiles. The navy-blue cathode band and orange body provide clear visual polarity identification during automated optical inspection (AOI) and manual rework of the HZ5C3RE-E.

Can HZ5C3RE-E be used as a replacement for HZ6C3L, and what are the key differences?

No - HZ5C3RE-E and HZ6C3L are distinct part numbers with different zener voltage ranges: HZ5C3RE-E is 6.1–6.4 V, while HZ6C3L is 6.1–6.4 V per the same datasheet table, but HZ5C3RE-E is a Renesas-marked variant with identical electrical specs and DO-35 packaging. The "RE-E" suffix indicates a specific Renesas internal revision and traceability code; electrically and mechanically, the HZ5C3RE-E functions identically to HZ6C3L in all documented parameters including r_d, P_d, and T_j.