Renesas HZ5C3TD-P-E

Overview

HZ5C3TD-P-E from Renesas is a silicon planar Zener diode engineered for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 6.1 V to 6.4 V, dynamic resistance of 60 Ω at 0.5 mA, maximum power dissipation of 400 mW, and junction temperature rating of 175 °C - deployed in reference voltage generators and low-drift power supply feedback paths.

For engineers reviewing the HZ5C3TD-P-E datasheet, HZ5C3TD-P-E pinout, HZ5C3TD-P-E application, or HZ5C3TD-P-E equivalent, key selection criteria include zener voltage tolerance (±0.3 V), low noise performance versus standard HZ series, DO-35 package thermal limits, and compatibility with DC-biased stabilization circuits requiring <1 μA leakage.

Technical Context

This device operates as a two-terminal voltage reference using avalanche breakdown in a planar-diffused silicon junction. Its low dynamic impedance (60 Ω) and reduced noise level (1/3–1/10 of HZ series) stem from optimized doping profile and geometry, enabling stable regulation under low-current bias (0.5–1 mA).

Designed for DC operation only, it exhibits a zener voltage temperature coefficient near zero at ~6.2 V (per Fig.2), making HZ5C3TD-P-E suitable for ambient-stable references where thermal drift must remain below ±0.05 %/°C across −55 °C to +125 °C operating range.

Key Specifications

Pinout & Package

Package: DO-35 glass axial package (JEITA code GRZZ0002ZB-A), orange body color, navy blue cathode band, mass 0.13 g, dimensions per SC-40 standard (φD = 2.0 mm, L = 26.0 mm, E = 4.2 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with 1N5233B and BZX55-C6V2, HZ5C3TD-P-E delivers superior noise performance and tighter initial V_Z tolerance (±0.3 V vs. ±5 %), but requires stricter thermal management due to lower P_d (400 mW) and is optimized exclusively for low-drift DC reference use.

Availability

HZ5C3TD-P-E is available at Aetrix Electronics and suitable for high-precision reference generator, low-noise audio bias supply, and industrial sensor excitation applications requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for HZ5C3TD-P-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. is a Japanese semiconductor manufacturer specializing in microcontrollers, analog mixed-signal ICs, and power management solutions for industrial, automotive, and infrastructure markets.

HZ5C3TD-P-E belongs to the HZ-L Series low-noise Zener diode product line, designed specifically for precision DC voltage reference applications demanding minimal thermal drift and ultralow noise in analog signal chains.

FAQ

What is the exact zener voltage range for HZ5C3TD-P-E?

HZ5C3TD-P-E has a guaranteed zener voltage range of 6.1 V minimum to 6.4 V maximum when tested at I_Z = 0.5 mA and T_a = 25 °C. This 0.3 V span reflects tight binning within the HZ-L Series' C3 variant group and enables predictable reference design without post-selection trimming.

Is HZ5C3TD-P-E suitable for AC-coupled or transient applications?

No - HZ5C3TD-P-E is explicitly rated for DC operation only, as noted in the datasheet's "Note 1". It is not characterized for surge current, switching speed, or AC impedance behavior. Use only in steady-state reverse-biased configurations with properly sized series current-limiting resistors.

What is the cathode identification method on HZ5C3TD-P-E?

HZ5C3TD-P-E uses a navy blue cathode band located on the orange glass DO-35 body. Pin 1 (cathode) is the lead marked by this band; Pin 2 (anode) is the unmarked lead. Orientation must be verified visually before PCB placement to avoid reverse-bias failure.

How does the noise performance of HZ5C3TD-P-E compare to standard Zener diodes?

HZ5C3TD-P-E achieves approximately 1/3 to 1/10 the noise level of legacy HZ-series Zeners due to proprietary planar diffusion and junction geometry. This is confirmed in the datasheet's Features section and enables use in high-SNR applications like medical sensor front-ends where standard diodes introduce measurable broadband interference.

Can HZ5C3TD-P-E replace HZ6C3L in existing designs?

Yes - HZ5C3TD-P-E is a direct functional and package-compatible replacement for HZ6C3L (same DO-35 package, identical pinout, overlapping V_Z range of 6.1–6.4 V). Both share identical absolute maximum ratings and electrical test conditions, allowing drop-in substitution without layout or schematic changes.