Renesas HZ5HB1-E

Overview

HZ5HB1-E from Renesas is a silicon planar Zener diode engineered for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 5.6 V (min 5.5 V, max 5.8 V), 400 mW power dissipation, 80 Ω dynamic resistance at 0.5 mA test current, and DO-35 glass package with navy-blue cathode band. It serves in stabilized reference supplies for instrumentation amplifiers and sensor signal conditioning.

For engineers reviewing the HZ5HB1-E datasheet, HZ5HB1-E pinout, HZ5HB1-E application, or HZ5HB1-E equivalent, key selection criteria include zener voltage tolerance (±0.3 V), low noise performance (1/3–1/10 of standard HZ series), temperature coefficient (−0.04 %/°C typical), and DO-35 thermal derating behavior up to 175°C junction temperature.

Technical Context

The HZ5HB1-E operates as a two-terminal shunt regulator with fixed breakdown voltage defined under DC test conditions at I_Z = 0.5 mA. Its low dynamic impedance (80 Ω) and low leakage support stable biasing in high-gain analog front-ends where supply ripple rejection and reference stability are critical.

Designed for low-noise applications, it achieves reduced diode noise via optimized silicon planar structure and process control-distinct from general-purpose Zeners. The −55°C to +175°C storage temperature range and 175°C maximum junction temperature enable use in industrial-grade environments without derating penalties below 70°C ambient.

Key Specifications

Pinout & Package

Package: DO-35 glass axial lead package (JEITA code GRZZ0002ZB-A, Renesas code SC-40), orange body color, navy-blue cathode band, mass 0.13 g, dimensions φD = 2.0 mm, E = 4.2 mm, L = 26.0 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode reference applications.

Compared with 1N4734A and BZX55C5V6, the HZ5HB1-E delivers tighter voltage tolerance (±0.3 V vs. ±5%), lower noise (1/10 vs. baseline), and lower leakage (1 μA vs. 10 μA), making it uniquely suited for metrology-grade analog subsystems where reference integrity dominates design constraints.

Availability

HZ5HB1-E is available at Aetrix Electronics and suitable for precision instrumentation, industrial temperature sensing, high-resolution data acquisition, and programmable logic controller input protection requiring stable component supply and long-term parametric consistency.

Supply support for HZ5HB1-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog power devices, and precision analog components for industrial, automotive, and infrastructure markets.

The HZ-L Series Zener diodes were developed specifically for low-noise voltage reference applications in high-fidelity analog signal chains, emphasizing noise reduction, tight voltage tolerance, and thermal stability over general-purpose regulation.

FAQ

What is the exact zener voltage range for HZ5HB1-E at 0.5 mA test current?

The HZ5HB1-E has a guaranteed zener voltage range of 5.5 V minimum to 5.8 V maximum when tested at I_Z = 0.5 mA and T_a = 25°C, per Renesas datasheet REJ03G0182-0300 Rev.3.00. This 5.6 V nominal rating with ±0.3 V tolerance supports precision reference designs without post-manufacturing trimming. The HZ5HB1-E achieves this specification through controlled silicon planar diffusion and screening.

Does HZ5HB1-E have a specified temperature coefficient, and how does it affect reference stability?

Yes, the HZ5HB1-E exhibits a typical zener voltage temperature coefficient (γ_Z) of −0.04 %/°C, as shown in Figure 2 of the datasheet. This low, predictable drift enables stable reference performance across −40°C to +85°C ambient ranges in industrial sensors. For a 5.6 V nominal output, this translates to ≈−2.24 mV/°C change - a key factor in cold-junction compensation circuits where HZ5HB1-E is commonly deployed.

Can HZ5HB1-E be used in surface-mount designs, or is it strictly through-hole?

HZ5HB1-E is exclusively packaged in the DO-35 axial glass case (JEITA GRZZ0002ZB-A), a through-hole format with 2.0 mm diameter and 26 mm length. It is not available in SMD variants such as SOD-123 or DO-213AB. Designers requiring surface-mount compatibility must select alternative Zener families like Renesas' HZL-SMD series or cross-reference to compatible SMT parts with equivalent noise and voltage specs.

How does the noise performance of HZ5HB1-E compare to standard Zener diodes, and where is this most beneficial?

HZ5HB1-E achieves approximately 1/3 to 1/10 the noise level of conventional HZ-series Zeners due to proprietary silicon planar processing. This makes it especially valuable in low-level analog signal paths - such as ECG front-ends, microphone preamplifiers, and 24-bit ADC reference buffers - where broadband diode noise would otherwise dominate system noise floor and degrade effective resolution.

What is the maximum allowable reverse voltage before breakdown for HZ5HB1-E in non-conducting state?

The HZ5HB1-E is rated for a maximum reverse voltage (V_R) of 2.0 V before significant leakage occurs, with reverse current capped at 1 μA max under that condition. This parameter ensures minimal loading on high-impedance sources during standby or unpowered states. Exceeding 2.0 V reverse bias risks increased leakage and potential long-term degradation - a constraint explicitly defined in the Electrical Characteristics table of the HZ5HB1-E datasheet.