Renesas HZ6B3L-E

Overview

HZ6B3L-E from Renesas is a silicon planar Zener diode engineered for low-noise voltage regulation in precision analog circuits, with a nominal zener voltage of 5.7–6.0 V, dynamic resistance of 80 Ω at 0.5 mA, maximum power dissipation of 400 mW, and junction temperature rating up to 175°C - deployed in reference voltage sources for data converters and low-drift sensor signal conditioning.

For engineers reviewing the HZ6B3L-E datasheet, HZ6B3L-E pinout, HZ6B3L-E application, or HZ6B3L-E equivalent, key selection criteria include its ultra-low noise performance (≈1/3–1/10 of standard HZ series), tight zener voltage tolerance, DO-35 package thermal profile, and suitability for low-current (<1 mA) stabilized bias networks where leakage and impedance stability are critical.

Technical Context

The HZ6B3L-E operates as a two-terminal shunt regulator with DC-tested zener characteristics, optimized for low-noise operation via reduced junction area and refined diffusion process. Its 80 Ω dynamic resistance at 0.5 mA and ≤1 μA reverse leakage at VR = 2.0 V support stable reference generation under light-load conditions.

This device belongs to the HZ-L Series, which achieves noise reduction through proprietary epitaxial planar construction and controlled defect density - distinct from standard HZ-series diodes - and exhibits a zener voltage temperature coefficient of approximately −0.04 %/°C near 6 V, confirmed by Figure 2 of REJ03G0182-0300.

Key Specifications

Pinout & Package

Package: DO-35 (JEITA code GRZZ0002ZB-A), glass axial body with navy blue cathode band; orange body color per datasheet; mass ≈ 0.13 g; lead spacing E = 4.2 mm; body diameter φD = 2.0 mm; length L = 26.0 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise Zener diode applications.

Compared with 1N5232B and BZX84-C6V2, the HZ6B3L-E delivers uniquely specified noise reduction, tighter V_Z tolerance, and guaranteed 400 mW power handling in DO-35 - making it the sole option among the three qualified for metrology-grade reference design.

Availability

HZ6B3L-E is available at Aetrix Electronics and suitable for high-precision ADC reference, low-drift sensor biasing, and op-amp feedback stabilization requiring stable component supply across industrial, automotive, and test equipment production programs.

Supply support for HZ6B3L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, and power devices for automotive, industrial, and infrastructure markets.

The HZ-L Series was developed specifically to address noise-sensitive analog reference needs in data acquisition and sensor signal chains - targeting applications where conventional Zener diodes introduce unacceptable spectral contamination.

FAQ

What is the exact zener voltage range for HZ6B3L-E at 0.5 mA test current?

The HZ6B3L-E has a guaranteed zener voltage range of 5.7 V minimum to 6.0 V maximum when tested at I_Z = 0.5 mA, as specified on page 2 of REJ03G0182-0300. This 0.3 V window enables predictable clamping behavior in 6 V reference designs without external trimming, and the value is measured using DC test conditions per datasheet Note 1.

Does HZ6B3L-E have a documented noise specification, and how does it compare to standard Zener diodes?

Yes - the HZ6B3L-E datasheet explicitly states its noise level is "approximately 1/3–1/10 lower than the HZ series," confirming quantifiable low-noise performance. This reduction stems from Renesas' silicon planar process optimization, and unlike generic Zeners such as 1N4735A, the HZ6B3L-E provides this metric as a defined family feature, not an inferred characteristic.

What is the maximum allowable reverse current before breakdown for HZ6B3L-E?

The HZ6B3L-E specifies a maximum reverse leakage current (I_R) of 1 μA when reverse-biased at V_R = 2.0 V, per Electrical Characteristics table on page 2. This low leakage ensures minimal error current in high-impedance reference nodes, and the parameter is validated at T_a = 25°C with DC testing methodology.

Can HZ6B3L-E be used in surface-mount designs, or is it strictly through-hole?

HZ6B3L-E is exclusively packaged in DO-35 - a through-hole glass axial package with 4.2 mm lead spacing - and has no SMT variant. It cannot be mounted on standard SMT reflow lines; manual soldering or wave soldering is required. No SOT-23 or SC-70 equivalent exists in the HZ-L Series per Renesas' package documentation on page 5.

What is the thermal resistance from junction to ambient for HZ6B3L-E in free air?

The datasheet does not publish explicit R_θJA for HZ6B3L-E, but Figure 3 (page 4) shows power derating curves: at T_a = 70°C, P_d drops to ~250 mW, implying approximate R_θJA ≈ 400°C/W. This aligns with typical DO-35 thermal performance and confirms the need for adequate PCB copper area or forced airflow when operating near 400 mW at elevated ambient temperatures.