Renesas HZ6B3LTD-E

Overview

HZ6B3LTD-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage reference and stabilization in precision analog circuits, featuring a nominal zener voltage of 5.7–6.0 V, 400 mW power dissipation, 80 Ω dynamic impedance at 0.5 mA, ≤1 μA reverse leakage at 2.0 V, and DO-35 glass package with navy-blue cathode band. It is used in low-drift bandgap reference buffers and noise-sensitive sensor signal conditioning stages.

For engineers reviewing the HZ6B3LTD-E datasheet, HZ6B3LTD-E pinout, HZ6B3LTD-E application, or HZ6B3LTD-E equivalent, key selection criteria include zener voltage tolerance (±0.3 V), temperature coefficient (−0.04 %/°C typical), low-noise performance versus standard HZ series, and DO-35 mechanical compatibility in space-constrained PCB layouts.

Technical Context

This device belongs to the HZ-L Series, engineered specifically to reduce diode noise by 70–90% compared to legacy HZ-series Zeners through refined silicon planar processing and optimized junction geometry. Its low dynamic impedance (80 Ω @ 0.5 mA) and tight V_Z tolerance support stable regulation under light-load conditions typical in reference divider networks.

The HZ6B3LTD-E operates within a −55°C to +175°C storage range and 175°C maximum junction temperature, with a zener voltage temperature coefficient of approximately −0.04 %/°C - indicating negative drift optimized for compensation in multi-device reference topologies. It is rated for standard industrial applications per Renesas' "Standard" quality grade classification.

Key Specifications

Pinout & Package

Package: DO-35 glass axial lead package (RENESAS code GRZZ0002ZB-A, JEITA SC-40), orange body with navy-blue cathode band. Dimensions: φD = 2.0 mm, L = 26.0 mm, E = 4.2 mm; mass ≈ 0.13 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with MMBZ5226BS and BZX84-C6V2, the HZ6B3LTD-E delivers superior noise performance and tighter V_Z tolerance in a robust DO-35 package, making it preferred for metrology-grade references - though its axial form factor requires more PCB area than SMD alternatives.

Availability

HZ6B3LTD-E is available at Aetrix Electronics and suitable for industrial automation, test and measurement equipment, and precision sensor interface circuits requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for HZ6B3LTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZ-L Series was developed by Renesas to address demand for ultra-low-noise Zener references in high-fidelity analog signal chains - targeting applications where traditional Zeners introduce unacceptable noise or drift in precision voltage references.

FAQ

What is the exact zener voltage range specified for HZ6B3LTD-E?

The HZ6B3LTD-E has a guaranteed zener voltage range of 5.7 V to 6.0 V when tested at 0.5 mA DC current, per Renesas REJ03G0182-0300 Rev.3.00. This 0.3 V tolerance supports accurate calibration in fixed-reference designs without post-manufacturing trimming. The HZ6B3LTD-E achieves this specification using silicon planar junction technology with controlled doping profiles.

Does HZ6B3LTD-E have a documented temperature coefficient, and how does it affect circuit design?

Yes, the HZ6B3LTD-E exhibits a typical zener voltage temperature coefficient (γ_Z) of −0.04 %/°C near 6 V, as shown in Figure 2 of the official datasheet. This negative drift enables predictable compensation when combined with positive-TC resistors or other reference elements. Designers use this value to calculate worst-case reference error over operating temperature ranges without empirical characterization.

Is HZ6B3LTD-E RoHS compliant and halogen-free?

Yes, the HZ6B3LTD-E complies with EU RoHS Directive requirements and is halogen-free, consistent with Renesas' environmental policy stated in the datasheet's Section 10. All materials and plating meet the maximum concentration values for lead, mercury, cadmium, hexavalent chromium, PBB, and PBDE. Full compliance documentation is available upon request from Aetrix Electronics.

Can HZ6B3LTD-E replace standard HZ-series Zeners in existing designs?

Yes, the HZ6B3LTD-E is a direct functional upgrade to the HZ6B3L variant with identical DO-35 package, pinout, and absolute maximum ratings. Its primary improvement is 70–90% lower noise - confirmed in Renesas' comparative testing - making it drop-in compatible for noise-sensitive revisions. No PCB or schematic changes are needed beyond verifying layout thermal relief for 400 mW dissipation.

What is the maximum reverse leakage current for HZ6B3LTD-E, and under what condition is it measured?

The maximum reverse leakage current for HZ6B3LTD-E is 1 μA, measured at a reverse voltage (V_R) of 2.0 V and ambient temperature of 25°C. This low leakage ensures minimal current draw in high-impedance reference dividers and preserves accuracy in battery-powered sensor nodes where quiescent current must remain below 10 μA.