Renesas HZ6C1TD-P-E

Overview

HZ6C1TD-P-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 6.0 V (min 5.8 V, max 6.1 V), dynamic resistance of 60 Ω at 0.5 mA, maximum power dissipation of 400 mW, and junction temperature rating up to 175°C. It is used in stabilized power supplies and reference circuits where low noise and stable voltage are critical.

For engineers reviewing the HZ6C1TD-P-E datasheet, HZ6C1TD-P-E pinout, HZ6C1TD-P-E application, or HZ6C1TD-P-E equivalent, key selection criteria include zener voltage tolerance, low dynamic impedance, thermal stability, DO-35 package compatibility, and noise performance in low-current bias conditions.

Technical Context

The HZ6C1TD-P-E operates as a two-terminal voltage reference device with a DC-tested zener breakdown mechanism. Its low-noise design achieves approximately 1/3–1/10 the noise level of standard HZ-series diodes, enabled by optimized silicon planar junction fabrication and controlled doping profiles.

It exhibits a zener voltage temperature coefficient of approximately −0.02 %/°C (−0.12 mV/°C) near 6 V, supporting stable operation across ambient temperatures from −55°C to +175°C. Dynamic resistance remains ≤60 Ω at I_Z = 0.5 mA, ensuring minimal output impedance variation under load.

Key Specifications

Pinout & Package

Package: DO-35 (JEITA code GRZZ0002ZB-A, Renesas SC-40), glass axial leaded package with orange body color and navy blue cathode band. Mass: 0.13 g. Dimensions: φD = 2.0 mm, E = 4.2 mm, L = 26.0 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with 1N4735A and BZX55C6V2, the HZ6C1TD-P-E trades slightly higher dynamic resistance for quantifiably lower broadband noise and tighter V_Z tolerance at low bias current-making it optimal for precision, low-power, noise-sensitive reference designs rather than general-purpose regulation.

Availability

HZ6C1TD-P-E is available at Aetrix Electronics and suitable for stabilized power supplies, precision instrumentation references, industrial analog input modules, and low-noise sensor biasing circuits requiring stable component supply and long-term parametric consistency.

Supply support for HZ6C1TD-P-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZ-L Series, including HZ6C1TD-P-E, was designed specifically for low-noise voltage reference applications in precision analog systems where conventional Zener diodes introduce unacceptable noise or thermal drift.

FAQ

What is the exact zener voltage range for HZ6C1TD-P-E?

The HZ6C1TD-P-E has a specified zener voltage range of 5.8 V minimum to 6.1 V maximum, measured at a test current of 0.5 mA and ambient temperature of 25°C. This tight 0.3 V window supports high-accuracy 6 V reference designs without external trimming. The value is confirmed in Renesas document REJ03G0182-0300 Rev.3.00, Page 2, under Electrical Characteristics for part number HZ6C1L (HZ6C1TD-P-E is the commercial-grade variant of HZ6C1L).

Does HZ6C1TD-P-E have a documented noise specification?

Yes, the HZ6C1TD-P-E is explicitly characterized for low noise: its noise level is approximately 1/3 to 1/10 that of the standard HZ series, as stated in the Features section of Renesas document REJ03G0182-0300 Rev.3.00. This performance stems from process-level optimization of the silicon planar junction and is validated across the full HZ-L family, including HZ6C1TD-P-E.

What package type and dimensions does HZ6C1TD-P-E use?

HZ6C1TD-P-E uses the DO-35 package (JEITA code GRZZ0002ZB-A, Renesas SC-40), with orange body color and navy blue cathode band. Key dimensions are: diameter φD = 2.0 mm, overall length L = 26.0 mm, and lead spacing E = 4.2 mm. These are specified in the Package Dimensions table on Page 5 of REJ03G0182-0300 Rev.3.00.

Is HZ6C1TD-P-E suitable for high-temperature environments?

Yes, HZ6C1TD-P-E supports operation up to a maximum junction temperature of 175°C and storage from −55°C to +175°C. Its thermal robustness is confirmed in the Absolute Maximum Ratings table (Page 2 of REJ03G0182-0300 Rev.3.00), making it appropriate for under-hood automotive, industrial control, and enclosed power supply applications.

How does the dynamic resistance of HZ6C1TD-P-E compare to standard Zener diodes?

HZ6C1TD-P-E has a dynamic resistance of ≤60 Ω at I_Z = 0.5 mA, which is higher than some high-current Zeners (e.g., 1N4735A at 7 Ω @ 41 mA) but optimized for low-bias, low-noise operation. This value ensures stable regulation in micropower reference circuits where typical bias currents are below 1 mA, as verified in the Electrical Characteristics table on Page 2 of REJ03G0182-0300 Rev.3.00.