Renesas HZ6C3J-E

Overview

HZ6C3J-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 6.1–6.4 V, dynamic resistance of 60 Ω at 0.5 mA, maximum power dissipation of 400 mW, and junction temperature rating of 175 °C. It is used in stabilized power supplies and reference circuits requiring low noise and stable DC bias.

For engineers reviewing the HZ6C3J-E datasheet, HZ6C3J-E pinout, HZ6C3J-E application, or HZ6C3J-E equivalent, key selection criteria include zener voltage tolerance (±0.3 V), low-noise performance versus standard HZ series, DO-35 package compatibility, and thermal derating above 25 °C ambient.

Technical Context

This device operates as a two-terminal shunt regulator with DC-tested zener characteristics, designed for low-noise applications where diode-generated noise must be minimized-achieving approximately 1/3 to 1/10 the noise level of legacy HZ-series diodes. Its low leakage current and low zener impedance support stable voltage references in high-gain amplifier bias networks.

The HZ6C3J-E uses a silicon planar construction in a DO-35 glass package with navy-blue cathode band marking, rated for storage from −55 °C to +175 °C and junction operation up to 175 °C. It is not intended for transient suppression or high-current regulation beyond its 400 mW dissipation limit.

Key Specifications

Pinout & Package

DO-35 glass axial package with orange body color and navy-blue cathode band. Total mass ≈ 0.13 g. Dimensions: φD = 2.0 mm (nom), L = 26.0 mm (min), E = 4.2 mm (max).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar zener reference applications.

Compared with 1N4735A and BZX55C6V2, the HZ6C3J-E delivers superior low-noise performance and tighter low-current regulation at 0.5 mA, making it uniquely suitable for precision analog signal chains where diode noise and microamp-level stability are design-critical.

Availability

HZ6C3J-E is available at Aetrix Electronics and suitable for stabilized power supplies, precision sensor biasing, low-noise audio conditioning, and embedded ADC reference circuits requiring stable component supply and long-term obsolescence management.

Supply support for HZ6C3J-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZ-L Series was developed specifically for low-noise voltage reference applications in high-fidelity analog systems, extending Renesas' legacy HZ zener portfolio with improved noise performance and tighter low-current regulation.

FAQ

What is the exact zener voltage range for HZ6C3J-E?

The HZ6C3J-E has a guaranteed zener voltage range of 6.1 V to 6.4 V when tested at I_Z = 0.5 mA and T_a = 25 °C. This 0.3 V span reflects its tight tolerance for precision low-current reference use, distinct from broader-tolerance variants like HZ6C2L (6.0–6.3 V) or HZ6C1L (5.8–6.1 V). The HZ6C3J-E is the highest-voltage variant within the HZ6C-xL subgroup.

Is HZ6C3J-E compatible with standard DO-35 footprint layouts?

Yes, the HZ6C3J-E uses the JEITA-standard DO-35 package (Renesas code GRZZ0002ZB-A), with axial leads, 2.0 mm body diameter, and 26 mm minimum length. Its pinout-cathode (band-marked end) and anode-is identical to all DO-35 zeners, enabling direct replacement in existing PCB footprints designed for DO-35 components without layout modification.

How does the noise performance of HZ6C3J-E compare to standard zener diodes?

The HZ6C3J-E achieves approximately 1/3 to 1/10 the noise level of conventional HZ-series zeners due to optimized silicon planar processing and low-noise junction design. This is verified in Renesas' characterization data and makes the HZ6C3J-E especially valuable in audio preamplifiers, sensor signal conditioning, and other applications where diode-generated noise directly impacts system SNR.

What is the maximum allowable reverse current before breakdown for HZ6C3J-E?

The HZ6C3J-E specifies a maximum reverse current (I_R) of 1 μA at V_R = 2.0 V, confirming very low leakage under sub-zener bias conditions. This parameter ensures minimal error current in high-impedance reference dividers and bias networks. At voltages below 2.0 V, leakage remains well below 1 μA-critical for battery-powered precision circuits.

Can HZ6C3J-E be used in surface-mount designs?

No, the HZ6C3J-E is exclusively offered in the through-hole DO-35 axial glass package and has no SMD variant. It requires axial lead insertion and wave or hand soldering. For surface-mount equivalents, designers should evaluate Renesas' HZ-L Series SOD-123 or SOD-323 packaged variants-though those carry different part numbers and are not drop-in replacements for HZ6C3J-E.