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Renesas HZ7.5BPTN-E

Part No.:
HZ7.5BPTN-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixHZ7.5BPTN-E.pdf
Description:
DIODE ZENER
Quantity:
Payment:
Payment
Shipping:
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Inventory:170,000

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Product details

Overview

HZ7.5BPTN-E from Renesas is a silicon planar Zener diode engineered for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 7.5 V (min 7.0 V, max 7.3 V), dynamic resistance of 60 Ω at 0.5 mA test current, and 400 mW power dissipation in DO-35 package. It delivers stable reference voltage in low-current bias networks and noise-sensitive instrumentation.

For engineers reviewing the HZ7.5BPTN-E datasheet, HZ7.5BPTN-E pinout, HZ7.5BPTN-E application, or HZ7.5BPTN-E equivalent, key selection criteria include its low-noise performance (1/3–1/10 lower than standard HZ series), tight zener voltage tolerance, temperature coefficient of −0.04 %/°C near 7.5 V, and suitability for low-power stabilized supplies requiring <1 μA leakage.

Technical Context

This device operates as a two-terminal voltage reference using avalanche breakdown in a planar-diffused silicon junction. Its low dynamic impedance (60 Ω) and low leakage (<1 μA at VR = 2.0 V) enable high regulation accuracy under light load conditions typical in sensor biasing and op-amp reference circuits.

The HZ7.5BPTN-E exhibits a negative temperature coefficient (−0.04 %/°C) optimized for stability near 7.5 V, and is rated for junction temperatures up to 175°C with storage range from −55°C to +175°C - supporting operation in industrial ambient environments without derating below 70°C.

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage (VZ)7.0 V min to 7.3 V max at IZ = 0.5 mA - defines usable reference window for ±4% tolerance designs
Dynamic Resistance (rd)60 Ω max at IZ = 0.5 mA - ensures minimal output voltage shift under small load variations
Power Dissipation (Pd)400 mW at Ta = 25°C - supports continuous operation in compact PCB layouts with natural convection cooling
Reverse Leakage (IR)1 μA max at VR = 2.0 V - preserves high-impedance node integrity in micropower circuits
Temperature Coefficient (γZ)−0.04 %/°C near 7.5 V - enables predictable drift compensation in temperature-stable references
Junction Temperature (Tj)175°C max - allows reliable operation in enclosed enclosures or near heat-generating components

Pinout & Package

Package: DO-35 glass axial lead package (JEITA code GRZZ0002ZB-A), orange body with navy blue cathode band; dimensions per SC-40 standard (L ≈ 26 mm, φD ≈ 2.0 mm, φb ≈ 0.5 mm); mass ≈ 0.13 g.

Pin/TerminalCircuit RoleDesign Meaning
1 (Cathode)Negative terminal of zener junctionConnected to higher-potential rail; polarity must be observed to maintain reverse-bias operation
2 (Anode)Positive terminal of zener junctionTypically grounded or tied to low-impedance return path; forms reference output node at cathode

Key Features

FeatureDesign Value
Low-noise zener operationDiode noise level ~1/3–1/10 that of standard HZ series - critical for audio preamps and precision ADC references
Tight zener voltage tolerance±2% typical spread (7.0–7.3 V) - reduces need for post-calibration in production test
Low dynamic impedance60 Ω at 0.5 mA - maintains regulation accuracy even with 10–100 μA load shifts
High thermal robustness175°C max junction temperature - enables use in automotive under-hood or industrial motor-control PCBs

Applications

Instrumentation ReferenceLow-Power Sensor Bias

Use Scenario: Providing stable 7.5 V reference for 16-bit SAR ADC front-end in portable environmental monitor.

IC Role / Device Role / Timing Role: Zener diode operating in reverse breakdown to generate fixed reference voltage for ADC VREF input.

Use Value: Low 60 Ω dynamic resistance minimizes code-dependent reference droop during conversion cycles, preserving ENOB.

Use Scenario: Biasing thermistor bridge in battery-powered IoT temperature node with <10 μA sleep current.

IC Role / Device Role / Timing Role: Low-leakage (≤1 μA) zener supplying excitation voltage to high-impedance resistive sensor network.

Use Value: Sub-μA leakage prevents measurable error in bridge offset, enabling <0.1°C resolution over −20°C to +70°C.

Op-Amp Precision ReferenceStabilized Power Supply

Use Scenario: Generating clean 7.5 V reference for rail-to-rail op-amp used in photodiode transimpedance amplifier.

IC Role / Device Role / Timing Role: Low-noise zener feeding non-inverting input of op-amp to set DC operating point.

Use Value: 1/10 noise vs. standard HZ series directly improves signal-to-noise ratio in picoampere-level current measurement.

Use Scenario: Regulating auxiliary 7.5 V rail for microcontroller reset supervisor and EEPROM write circuitry.

IC Role / Device Role / Timing Role: Shunt regulator maintaining constant voltage across 10–50 mA load with line and load regulation.

Use Value: 400 mW rating supports 50 mA at 7.5 V with 25°C ambient, eliminating need for heatsinking in space-constrained designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar zener diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BZX55C7V5 (ON Semiconductor)Zener voltage 7.3–7.7 V; rd = 70 Ω; Pd = 500 mW; DO-35 packageHigher power rating but wider VZ tolerance; higher noise than HZ7.5BPTN-ESelect when higher power margin is required and noise sensitivity is secondary
MMSZ5234B (Diodes Inc.)Zener voltage 7.14–7.42 V; rd = 30 Ω; Pd = 350 mW; SOD-123 surface-mountLower dynamic resistance but SMT-only; not drop-in compatible with through-hole DO-35 layoutSelect for space-constrained PCBs where rework to SMT is acceptable and lower rd is prioritized

Compared with BZX55C7V5 and MMSZ5234B, the HZ7.5BPTN-E offers superior noise performance and tighter VZ control in through-hole DO-35 form factor, making it optimal for legacy or service-repair designs where low-noise analog stability is non-negotiable.

Availability

HZ7.5BPTN-E is available at Aetrix Electronics and suitable for precision instrumentation, low-power sensor systems, and stabilized power supply designs requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for HZ7.5BPTN-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog power, and SoC solutions for automotive, industrial, and enterprise applications.

The HZ-L Series was developed specifically for low-noise voltage reference applications demanding high stability, low leakage, and precise zener voltage control in harsh thermal environments.

FAQ

What is the exact zener voltage range specified for HZ7.5BPTN-E?

The HZ7.5BPTN-E has a guaranteed zener voltage range of 7.0 V minimum to 7.3 V maximum when tested at IZ = 0.5 mA and Ta = 25°C. This 300 mV span reflects its "B" grade tolerance within the HZ-L family and is confirmed in the Electrical Characteristics table on page 2 of REJ03G0182-0300 Rev.3.00. The nominal 7.5 V designation indicates the center of the series' voltage grading scheme.

Does HZ7.5BPTN-E support operation above 100°C ambient temperature?

Yes, the HZ7.5BPTN-E is rated for storage from −55°C to +175°C and junction temperature up to 175°C. Its power dissipation derates linearly above 25°C ambient, maintaining functionality up to approximately 125°C ambient at reduced current (e.g., ≤15 mA). Full 400 mW operation requires heatsinking or forced air above 70°C ambient - verified in Figure 3 of the datasheet.

Is HZ7.5BPTN-E suitable for use as a voltage reference in 16-bit ADC circuits?

Yes, the HZ7.5BPTN-E is explicitly designed for low-noise reference applications. Its dynamic resistance of 60 Ω and noise level 1/3–1/10 that of standard HZ series minimize voltage perturbation during ADC sampling events. When paired with a low-pass RC filter, it achieves effective reference noise <10 μVpp, supporting ENOB >15 bits in precision SAR ADC implementations such as those using the HZ7.5BPTN-E.

What is the reverse leakage current specification for HZ7.5BPTN-E?

The reverse leakage current (IR) for HZ7.5BPTN-E is specified as ≤1 μA maximum at VR = 2.0 V and Ta = 25°C. This ultra-low leakage preserves high-impedance node integrity in micropower circuits and ensures negligible error contribution in sensor bias networks - a key differentiator versus general-purpose zeners with leakage >5 μA.

Can HZ7.5BPTN-E be substituted with a surface-mount zener diode without changing the PCB layout?

No, HZ7.5BPTN-E uses a DO-35 axial glass package with 26 mm lead length and 2.0 mm body diameter. Surface-mount alternatives like MMSZ5234B (SOD-123) require complete PCB redesign. For direct mechanical replacement, only other DO-35 devices - such as BZX55C7V5 - are physically compatible, though they lack the low-noise performance of the HZ7.5BPTN-E.

HZ7.5BPTN-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HZ7.5BPTN-E FAQ

1.How can I place an order for HZ7.5BPTN-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZ7.5BPTN-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZ7.5BPTN-E reliable?

The price and inventory of HZ7.5BPTN-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZ7.5BPTN-E is usually 5 days.

3.What payment methods are accepted for HZ7.5BPTN-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZ7.5BPTN-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZ7.5BPTN-E?

HZ7.5BPTN-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZ7.5BPTN-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZ7.5BPTN-E?

For technical support, including HZ7.5BPTN-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZ7.5BPTN-E requirements.

6.How does Aetrix verify that HZ7.5BPTN-E is sourced from the original manufacturer or authorized distributors?

All HZ7.5BPTN-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZ7.5BPTN-E meets industry standards.

7.What is the process for return or replacement of HZ7.5BPTN-E?

All HZ7.5BPTN-E units undergo pre-shipment inspection (PSI). If there is an issue with HZ7.5BPTN-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZ7.5BPTN-E part is unused and in its original packaging.

Return procedure for HZ7.5BPTN-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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