Renesas HZ7.5BPTN-E
- Part No.:
- HZ7.5BPTN-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZ7.5BPTN-E.pdf
- Description:
- DIODE ZENER
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Inventory:170,000
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Product details
Overview
HZ7.5BPTN-E from Renesas is a silicon planar Zener diode engineered for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 7.5 V (min 7.0 V, max 7.3 V), dynamic resistance of 60 Ω at 0.5 mA test current, and 400 mW power dissipation in DO-35 package. It delivers stable reference voltage in low-current bias networks and noise-sensitive instrumentation.
For engineers reviewing the HZ7.5BPTN-E datasheet, HZ7.5BPTN-E pinout, HZ7.5BPTN-E application, or HZ7.5BPTN-E equivalent, key selection criteria include its low-noise performance (1/3–1/10 lower than standard HZ series), tight zener voltage tolerance, temperature coefficient of −0.04 %/°C near 7.5 V, and suitability for low-power stabilized supplies requiring <1 μA leakage.
Technical Context
This device operates as a two-terminal voltage reference using avalanche breakdown in a planar-diffused silicon junction. Its low dynamic impedance (60 Ω) and low leakage (<1 μA at VR = 2.0 V) enable high regulation accuracy under light load conditions typical in sensor biasing and op-amp reference circuits.
The HZ7.5BPTN-E exhibits a negative temperature coefficient (−0.04 %/°C) optimized for stability near 7.5 V, and is rated for junction temperatures up to 175°C with storage range from −55°C to +175°C - supporting operation in industrial ambient environments without derating below 70°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 7.0 V min to 7.3 V max at IZ = 0.5 mA - defines usable reference window for ±4% tolerance designs |
| Dynamic Resistance (rd) | 60 Ω max at IZ = 0.5 mA - ensures minimal output voltage shift under small load variations |
| Power Dissipation (Pd) | 400 mW at Ta = 25°C - supports continuous operation in compact PCB layouts with natural convection cooling |
| Reverse Leakage (IR) | 1 μA max at VR = 2.0 V - preserves high-impedance node integrity in micropower circuits |
| Temperature Coefficient (γZ) | −0.04 %/°C near 7.5 V - enables predictable drift compensation in temperature-stable references |
| Junction Temperature (Tj) | 175°C max - allows reliable operation in enclosed enclosures or near heat-generating components |
Pinout & Package
Package: DO-35 glass axial lead package (JEITA code GRZZ0002ZB-A), orange body with navy blue cathode band; dimensions per SC-40 standard (L ≈ 26 mm, φD ≈ 2.0 mm, φb ≈ 0.5 mm); mass ≈ 0.13 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Negative terminal of zener junction | Connected to higher-potential rail; polarity must be observed to maintain reverse-bias operation |
| 2 (Anode) | Positive terminal of zener junction | Typically grounded or tied to low-impedance return path; forms reference output node at cathode |
Key Features
| Feature | Design Value |
|---|---|
| Low-noise zener operation | Diode noise level ~1/3–1/10 that of standard HZ series - critical for audio preamps and precision ADC references |
| Tight zener voltage tolerance | ±2% typical spread (7.0–7.3 V) - reduces need for post-calibration in production test |
| Low dynamic impedance | 60 Ω at 0.5 mA - maintains regulation accuracy even with 10–100 μA load shifts |
| High thermal robustness | 175°C max junction temperature - enables use in automotive under-hood or industrial motor-control PCBs |
Applications
| Instrumentation Reference | Low-Power Sensor Bias |
|---|---|
Use Scenario: Providing stable 7.5 V reference for 16-bit SAR ADC front-end in portable environmental monitor. IC Role / Device Role / Timing Role: Zener diode operating in reverse breakdown to generate fixed reference voltage for ADC VREF input. Use Value: Low 60 Ω dynamic resistance minimizes code-dependent reference droop during conversion cycles, preserving ENOB. | Use Scenario: Biasing thermistor bridge in battery-powered IoT temperature node with <10 μA sleep current. IC Role / Device Role / Timing Role: Low-leakage (≤1 μA) zener supplying excitation voltage to high-impedance resistive sensor network. Use Value: Sub-μA leakage prevents measurable error in bridge offset, enabling <0.1°C resolution over −20°C to +70°C. |
| Op-Amp Precision Reference | Stabilized Power Supply |
Use Scenario: Generating clean 7.5 V reference for rail-to-rail op-amp used in photodiode transimpedance amplifier. IC Role / Device Role / Timing Role: Low-noise zener feeding non-inverting input of op-amp to set DC operating point. Use Value: 1/10 noise vs. standard HZ series directly improves signal-to-noise ratio in picoampere-level current measurement. | Use Scenario: Regulating auxiliary 7.5 V rail for microcontroller reset supervisor and EEPROM write circuitry. IC Role / Device Role / Timing Role: Shunt regulator maintaining constant voltage across 10–50 mA load with line and load regulation. Use Value: 400 mW rating supports 50 mA at 7.5 V with 25°C ambient, eliminating need for heatsinking in space-constrained designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX55C7V5 (ON Semiconductor) | Zener voltage 7.3–7.7 V; rd = 70 Ω; Pd = 500 mW; DO-35 package | Higher power rating but wider VZ tolerance; higher noise than HZ7.5BPTN-E | Select when higher power margin is required and noise sensitivity is secondary |
| MMSZ5234B (Diodes Inc.) | Zener voltage 7.14–7.42 V; rd = 30 Ω; Pd = 350 mW; SOD-123 surface-mount | Lower dynamic resistance but SMT-only; not drop-in compatible with through-hole DO-35 layout | Select for space-constrained PCBs where rework to SMT is acceptable and lower rd is prioritized |
Compared with BZX55C7V5 and MMSZ5234B, the HZ7.5BPTN-E offers superior noise performance and tighter VZ control in through-hole DO-35 form factor, making it optimal for legacy or service-repair designs where low-noise analog stability is non-negotiable.
Availability
HZ7.5BPTN-E is available at Aetrix Electronics and suitable for precision instrumentation, low-power sensor systems, and stabilized power supply designs requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for HZ7.5BPTN-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog power, and SoC solutions for automotive, industrial, and enterprise applications.
The HZ-L Series was developed specifically for low-noise voltage reference applications demanding high stability, low leakage, and precise zener voltage control in harsh thermal environments.
FAQ
What is the exact zener voltage range specified for HZ7.5BPTN-E?
The HZ7.5BPTN-E has a guaranteed zener voltage range of 7.0 V minimum to 7.3 V maximum when tested at IZ = 0.5 mA and Ta = 25°C. This 300 mV span reflects its "B" grade tolerance within the HZ-L family and is confirmed in the Electrical Characteristics table on page 2 of REJ03G0182-0300 Rev.3.00. The nominal 7.5 V designation indicates the center of the series' voltage grading scheme.
Does HZ7.5BPTN-E support operation above 100°C ambient temperature?
Yes, the HZ7.5BPTN-E is rated for storage from −55°C to +175°C and junction temperature up to 175°C. Its power dissipation derates linearly above 25°C ambient, maintaining functionality up to approximately 125°C ambient at reduced current (e.g., ≤15 mA). Full 400 mW operation requires heatsinking or forced air above 70°C ambient - verified in Figure 3 of the datasheet.
Is HZ7.5BPTN-E suitable for use as a voltage reference in 16-bit ADC circuits?
Yes, the HZ7.5BPTN-E is explicitly designed for low-noise reference applications. Its dynamic resistance of 60 Ω and noise level 1/3–1/10 that of standard HZ series minimize voltage perturbation during ADC sampling events. When paired with a low-pass RC filter, it achieves effective reference noise <10 μVpp, supporting ENOB >15 bits in precision SAR ADC implementations such as those using the HZ7.5BPTN-E.
What is the reverse leakage current specification for HZ7.5BPTN-E?
The reverse leakage current (IR) for HZ7.5BPTN-E is specified as ≤1 μA maximum at VR = 2.0 V and Ta = 25°C. This ultra-low leakage preserves high-impedance node integrity in micropower circuits and ensures negligible error contribution in sensor bias networks - a key differentiator versus general-purpose zeners with leakage >5 μA.
Can HZ7.5BPTN-E be substituted with a surface-mount zener diode without changing the PCB layout?
No, HZ7.5BPTN-E uses a DO-35 axial glass package with 26 mm lead length and 2.0 mm body diameter. Surface-mount alternatives like MMSZ5234B (SOD-123) require complete PCB redesign. For direct mechanical replacement, only other DO-35 devices - such as BZX55C7V5 - are physically compatible, though they lack the low-noise performance of the HZ7.5BPTN-E.
HZ7.5BPTN-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZ7.5BPTN-E FAQ
1.How can I place an order for HZ7.5BPTN-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZ7.5BPTN-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZ7.5BPTN-E reliable?
The price and inventory of HZ7.5BPTN-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZ7.5BPTN-E is usually 5 days.
3.What payment methods are accepted for HZ7.5BPTN-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZ7.5BPTN-E transactions.
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4.How is shipping managed for HZ7.5BPTN-E?
HZ7.5BPTN-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZ7.5BPTN-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZ7.5BPTN-E?
For technical support, including HZ7.5BPTN-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZ7.5BPTN-E requirements.
6.How does Aetrix verify that HZ7.5BPTN-E is sourced from the original manufacturer or authorized distributors?
All HZ7.5BPTN-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZ7.5BPTN-E meets industry standards.
7.What is the process for return or replacement of HZ7.5BPTN-E?
All HZ7.5BPTN-E units undergo pre-shipment inspection (PSI). If there is an issue with HZ7.5BPTN-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZ7.5BPTN-E part is unused and in its original packaging.
Return procedure for HZ7.5BPTN-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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