Renesas HZ7A1JTA-E

Overview

HZ7A1JTA-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, with a nominal zener voltage of 6.3–6.6 V, 400 mW power dissipation, 60 Ω dynamic resistance at 0.5 mA test current, and DO-35 glass package. It serves as a stable reference in low-drift power supplies and sensor biasing networks.

For engineers reviewing the HZ7A1JTA-E datasheet, HZ7A1JTA-E pinout, HZ7A1JTA-E application, or HZ7A1JTA-E equivalent, key selection criteria include zener voltage tolerance (±0.3 V), low noise performance (1/3–1/10 that of standard HZ series), temperature coefficient (−0.02 %/°C typical), and thermal stability up to 175°C junction temperature.

Technical Context

This device operates as a two-terminal voltage reference using avalanche breakdown in a planar-diffused silicon junction. Its low dynamic impedance (60 Ω) and tight zener voltage tolerance (6.3–6.6 V at 0.5 mA) enable high-accuracy regulation under varying load conditions.

The HZ7A1JTA-E exhibits a negative temperature coefficient (−0.02 %/°C) and is rated for 400 mW DC power dissipation at 25°C ambient, derating linearly above 25°C per the published thermal curve. Junction temperature is limited to 175°C, supporting operation in industrial-grade environments.

Key Specifications

Pinout & Package

Package: DO-35 glass axial package (JEITA code GRZZ0002ZB-A), orange body with navy-blue cathode band. Mass: 0.13 g. Dimensions: φD = 2.0 mm, L = 26.0 mm, E = 4.2 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode reference applications.

Compared with 1N4733A and BZX55C6V2, the HZ7A1JTA-E delivers superior voltage accuracy (±0.3 V vs. ±5%), lower noise (70–90% reduction), and tighter tempco (−0.02 %/°C), making it optimal for metrology-grade and audio-critical designs despite its 400 mW limit.

Availability

HZ7A1JTA-E is available at Aetrix Electronics and suitable for precision instrumentation, low-noise audio circuits, industrial sensor excitation, and PLC analog input modules requiring stable component supply and long-term parametric consistency.

Supply support for HZ7A1JTA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog power, and SoC solutions for automotive, industrial, and infrastructure markets.

The HZ-L Series Zener diodes were designed specifically for low-noise, high-stability voltage reference applications in analog signal conditioning and precision power management subsystems.

FAQ

What is the exact zener voltage range specified for HZ7A1JTA-E?

The HZ7A1JTA-E has a guaranteed zener voltage range of 6.3 V to 6.6 V when tested at I_Z = 0.5 mA and T_a = 25°C. This 0.3 V window reflects tight process control for high-accuracy reference applications. The nominal value is 6.45 V, and the device maintains this specification across its qualified temperature and lifetime operating conditions. HZ7A1JTA-E achieves this via planar diffusion and optimized junction geometry.

Does HZ7A1JTA-E have a documented low-noise performance specification?

Yes - the HZ-L Series datasheet explicitly states that HZ7A1JTA-E exhibits approximately 1/3 to 1/10 the noise level of the legacy HZ series Zener diodes. This low-noise characteristic results from refined silicon processing and junction design, and is verified under standard DC test conditions. HZ7A1JTA-E is therefore recommended for noise-sensitive applications such as precision ADC references and audio preamp biasing.

What is the maximum power dissipation and thermal derating behavior of HZ7A1JTA-E?

HZ7A1JTA-E is rated for 400 mW maximum power dissipation at T_a = 25°C, with linear derating above that ambient temperature as shown in Figure 3 of the datasheet. The junction-to-ambient thermal resistance is implied by the published curve, supporting operation up to 175°C junction temperature. HZ7A1JTA-E must be mounted on standard FR-4 PCB with recommended lead spacing to meet these ratings.

Is HZ7A1JTA-E compatible with automated placement and reflow soldering processes?

HZ7A1JTA-E uses a DO-35 glass axial package with standard lead pitch and dimensions compliant with JEDEC standards for through-hole components. While not surface-mount, it supports wave soldering and hand-soldering with standard profiles. HZ7A1JTA-E is not rated for reflow due to glass-body thermal stress limitations; recommended process is controlled-temperature wave or selective soldering with peak temperature ≤300°C for <5 seconds.

What is the temperature coefficient of HZ7A1JTA-E and how does it affect long-term stability?

HZ7A1JTA-E has a typical zener voltage temperature coefficient of −0.02 %/°C, as shown in Figure 2 of the datasheet. This low, predictable drift minimizes output variation across industrial temperature ranges (−40°C to +125°C). For a 6.45 V nominal reference, this equates to ≈−1.3 mV/°C - enabling stable performance in unheated enclosures. HZ7A1JTA-E leverages this spec for applications where active temperature compensation is impractical.