Renesas HZ7A1JTD-E

Overview

HZ7A1JTD-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 6.3–6.6 V at 0.5 mA test current, dynamic resistance of 60 Ω max, and 400 mW power dissipation in DO-35 package. It serves as a stable reference in low-drift power supply feedback paths and sensor biasing networks.

For engineers reviewing the HZ7A1JTD-E datasheet, HZ7A1JTD-E pinout, HZ7A1JTD-E application, or HZ7A1JTD-E equivalent, key selection criteria include its low noise level (≈1/3–1/10 of standard HZ series), tight zener voltage tolerance, temperature coefficient behavior below 0.1 %/°C above 6 V, and suitability for low-current (<1 mA) stabilization where leakage and impedance stability are critical.

Technical Context

This device operates as a two-terminal shunt regulator with DC-tested zener characteristics, designed for operation at I_Z = 0.5 mA. Its low dynamic resistance (60 Ω max) and low reverse leakage (<1 μA at V_R = 2.0 V) support high-accuracy voltage referencing in low-power analog front-ends.

The HZ7A1JTD-E belongs to the HZ-L Series, which uses silicon planar construction to achieve reduced noise and improved thermal stability versus legacy HZ diodes. Its zener voltage temperature coefficient is negative and minimized near 6.5 V - consistent with the 6.3–6.6 V range - enabling stable performance across −55°C to +175°C junction temperatures.

Key Specifications

Pinout & Package

Package: DO-35 (JEITA code GRZZ0002ZB-A), glass axial leaded case with orange body and navy-blue cathode band. Mass: 0.13 g. Dimensions: φD = 2.0 mm, L = 26.0 mm, E = 4.2 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode reference applications.

Compared with BZX84-C6V2 and 1N4735A, the HZ7A1JTD-E uniquely balances ultra-low noise, tight 6.3–6.6 V tolerance, and 400 mW capability in DO-35 - making it optimal for low-current, high-stability analog references where spectral purity and thermal resilience are jointly required.

Availability

HZ7A1JTD-E is available at Aetrix Electronics and suitable for precision analog references, sensor excitation circuits, and low-noise power monitoring applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for HZ7A1JTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog power, and SoC solutions for automotive, industrial, and IoT applications, with emphasis on functional safety and long-term supply assurance.

The HZ-L Series was developed specifically for low-noise, high-stability voltage reference applications in analog signal chains - targeting design-in longevity and parametric consistency across wide temperature and current operating conditions.

FAQ

What is the zener voltage range and test condition for HZ7A1JTD-E?

The HZ7A1JTD-E has a zener voltage range of 6.3 V to 6.6 V, specified at a test current of 0.5 mA. This narrow tolerance window supports high-accuracy regulation without trimming, and the value is DC-tested per Renesas specification REJ03G0182-0300. The HZ7A1JTD-E maintains this performance across its rated junction temperature range.

Does HZ7A1JTD-E have a documented temperature coefficient?

Yes - the HZ7A1JTD-E exhibits a zener voltage temperature coefficient (γ_Z) of approximately −0.04 %/°C to −0.06 %/°C in its 6.3–6.6 V range, as shown in Figure 2 of the HZ-L Series datasheet. This low, predictable drift enables stable reference performance in environments with ambient shifts up to 100°C, and the HZ7A1JTD-E's behavior aligns with the broader HZ-L family trend near 6.5 V.

What is the maximum reverse leakage current for HZ7A1JTD-E?

The maximum reverse leakage current for HZ7A1JTD-E is 1 μA at a reverse voltage of 2.0 V and ambient temperature of 25°C. This low leakage ensures minimal error injection in high-impedance bias networks and preserves accuracy in precision instrumentation circuits where the HZ7A1JTD-E is commonly deployed.

Can HZ7A1JTD-E be used in surface-mount designs?

No - the HZ7A1JTD-E is packaged in DO-35 (axial glass), a through-hole format. It is not compatible with SMT assembly. For surface-mount alternatives, consider the BZX84-C6V2 or other SOT-23 Zeners, but note their higher noise and different regulation characteristics compared to the HZ7A1JTD-E.

How does the noise performance of HZ7A1JTD-E compare to standard Zener diodes?

The HZ7A1JTD-E achieves approximately 1/3 to 1/10 the noise level of conventional HZ-series Zener diodes due to its silicon planar construction and optimized process. This reduction is verified in Renesas' characterization data and makes the HZ7A1JTD-E especially valuable in audio, medical, and high-resolution ADC reference applications where spectral purity is critical.