Renesas HZ7A3L-E

Overview

HZ7A3L-E from Renesas is a silicon planar Zener diode engineered for low-noise voltage regulation in precision analog circuits, with a nominal zener voltage of 6.6–6.9 V, 400 mW power dissipation, 60 Ω dynamic resistance at 3.5 mA, and DO-35 package. It serves as a stable reference in low-drift power supplies and sensor biasing networks.

For engineers reviewing the HZ7A3L-E datasheet, HZ7A3L-E pinout, HZ7A3L-E application, or HZ7A3L-E equivalent, key selection criteria include zener voltage tolerance (±0.3 V), low noise performance (1/3–1/10 that of standard HZ series), temperature coefficient (−0.02 %/°C typical), and suitability for low-current (<1 mA) reverse-biased reference designs.

Technical Context

The HZ7A3L-E operates as a two-terminal voltage reference diode with cathode-anode polarity, optimized for DC-stabilized operation at I_Z = 3.5 mA. Its low dynamic impedance (60 Ω max) and tight V_Z tolerance support high-accuracy regulation in low-power analog front-ends.

Designed for low-noise applications, it achieves reduced diode noise through planar silicon processing and controlled junction geometry. The device exhibits a negative temperature coefficient (−0.02 %/°C) near 6.7 V, enabling predictable drift compensation in reference circuits.

Key Specifications

Pinout & Package

Package: DO-35 glass axial package (JEITA code GRZZ0002ZB-A), orange body color, navy blue cathode band. Mass: 0.13 g. Dimensions: φD = 2.0 mm, L = 26.0 mm, E = 4.2 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with 1N4734A and BZX55C6V8, the HZ7A3L-E delivers tighter V_Z tolerance (±0.3 V), verified low-noise performance, and lower leakage-making it preferred for precision analog reference designs despite its lower power rating.

Availability

HZ7A3L-E is available at Aetrix Electronics and suitable for precision sensor biasing, low-noise audio power rails, and industrial power monitor references requiring stable component supply, long-term parametric consistency, and traceable sourcing.

Supply support for HZ7A3L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.

The HZ-L Series was designed specifically for low-noise, high-stability voltage reference applications in analog signal chains, emphasizing tight V_Z tolerance, low dynamic impedance, and reduced diode noise versus legacy Zener families.

FAQ

What is the exact zener voltage range for HZ7A3L-E?

The HZ7A3L-E has a guaranteed zener voltage range of 6.6 V to 6.9 V when tested at I_Z = 3.5 mA and T_a = 25°C. This ±0.3 V window reflects tight process control for precision reference use. The nominal value is 6.75 V, and the specification is verified per Renesas document REJ03G0182-0300 Rev.3.00. HZ7A3L-E maintains this range across its qualified operating temperature span with defined temperature coefficient behavior.

Is HZ7A3L-E suitable for low-noise audio applications?

Yes, the HZ7A3L-E is explicitly characterized for low-noise operation, with diode noise approximately 1/3–1/10 that of the standard HZ series. Its planar silicon construction and optimized junction reduce flicker and thermal noise components. When used as a reference or bias source in microphone preamplifiers or DAC output stages, HZ7A3L-E directly contributes to lower system noise floor. Renesas confirms this performance in the HZ-L Series datasheet (REJ03G0182-0300), making HZ7A3L-E a validated choice for audio-grade analog circuits.

What is the maximum reverse leakage current for HZ7A3L-E?

The maximum reverse leakage current (I_R) for HZ7A3L-E is 1 μA at V_R = 2.0 V and T_a = 25°C. This ultra-low leakage supports energy-efficient designs, especially in battery-powered systems where standby current must be minimized. The specification is measured under DC conditions and confirmed in the Electrical Characteristics table on page 2 of the official Renesas datasheet REJ03G0182-0300. HZ7A3L-E's leakage remains well below 5 μA even at elevated temperatures, ensuring reliability in extended-range applications.

Does HZ7A3L-E have a specified temperature coefficient?

Yes, the HZ7A3L-E has a typical zener voltage temperature coefficient (γ_Z) of −0.02 %/°C, as shown in Figure 2 of the Renesas HZ-L Series datasheet (REJ03G0182-0300). This negative coefficient is consistent with zener diodes in the 6–7 V range and enables predictable drift modeling in reference circuits. The coefficient is measured across the full V_Z range of 6.6–6.9 V and applies over the operational ambient temperature range. For thermal compensation schemes, HZ7A3L-E's γ_Z allows accurate prediction of output shift per degree Celsius.

What package type does HZ7A3L-E use and what are its key mechanical dimensions?

HZ7A3L-E uses the DO-35 glass axial package (JEITA code GRZZ0002ZB-A), with an orange body and navy blue cathode band. Key dimensions are: body diameter φD = 2.0 mm (nominal), overall length L = 26.0 mm, and lead spacing E = 4.2 mm. The package mass is 0.13 g. These dimensions comply with standard DO-35 footprints, enabling compatibility with automated insertion equipment and legacy through-hole PCB layouts. The mechanical drawing is provided on page 5 of the Renesas datasheet REJ03G0182-0300, confirming HZ7A3L-E's physical identity as a discrete axial-leaded Zener diode.