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Renesas HZ9B1JRE-E
- Part No.:
- HZ9B1JRE-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZ9B1JRE-E.pdf
- Description:
- DIODE ZENER
- Quantity:
- Payment:
- Shipping:
Inventory:80,000
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Product details
Overview
HZ9B1JRE-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, with a nominal zener voltage of 8.3–8.7 V at 0.5 mA, 400 mW power dissipation, 60 Ω dynamic impedance, and DO-35 glass package. It serves as a stable reference in low-drift power supplies and sensor biasing networks.
For engineers reviewing the HZ9B1JRE-E datasheet, HZ9B1JRE-E pinout, HZ9B1JRE-E application, or HZ9B1JRE-E equivalent, key selection criteria include zener voltage tolerance (±0.4 V), low noise performance (1/3–1/10 that of standard HZ series), temperature coefficient (−0.02 %/°C at ~8.5 V), and DO-35 mechanical compatibility in space-constrained PCB layouts.
Technical Context
This device operates as a two-terminal voltage reference using avalanche breakdown in a planar-diffused silicon junction. Its low dynamic resistance (60 Ω max at 0.5 mA) and tight zener voltage tolerance support stable regulation under varying load and temperature conditions.
The HZ9B1JRE-E exhibits a negative temperature coefficient near 8.5 V (−0.02 %/°C), minimizing thermal drift in reference circuits. Its 400 mW power rating and 175°C maximum junction temperature enable reliable operation in industrial ambient environments up to 70°C without derating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 8.3–8.7 V at IZ = 0.5 mA - defines precise DC reference level for feedback or bias networks |
| Dynamic Resistance (rd) | 60 Ω max at IZ = 0.5 mA - ensures minimal output voltage variation under load transients |
| Power Dissipation (Pd) | 400 mW - supports continuous operation in compact through-hole designs without forced cooling |
| Zener Current (IZ) | 0.5 mA test condition - establishes low-power operation compatible with high-impedance control loops |
| Reverse Leakage (IR) | 1 μA max at VR = 2.0 V - minimizes error current in high-precision reference dividers |
| Temperature Coefficient (γZ) | −0.02 %/°C - enables predictable, low-drift behavior across −55°C to +125°C operating range |
Pinout & Package
Package: DO-35 glass axial package (JEITA code GRZZ0002ZB-A), orange body color, navy blue cathode band, 2.0 mm diameter × 26.0 mm length, 0.13 g mass.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | High-side reference node | Connected to regulated positive rail; polarity must be observed to avoid forward conduction |
| 2 (Anode) | Reference ground return | Provides low-impedance path to circuit common; reverse-biased operation requires anode at lower potential than cathode |
Key Features
| Feature | Design Value |
|---|---|
| Low-noise Zener operation | Noise level reduced to 1/3–1/10 of standard HZ series - critical for audio preamps and precision ADC references |
| Tight zener voltage tolerance | ±0.4 V over 8.3–8.7 V range at 0.5 mA - eliminates need for post-assembly trimming in production |
| Low dynamic impedance | 60 Ω max - maintains regulation accuracy even with ±10% load current variation |
| Wide operating temperature range | −55°C to +175°C storage; functional to +125°C - suitable for automotive under-hood and industrial control environments |
Applications
| Instrumentation Reference | Low-Noise Audio Biasing |
|---|---|
Use Scenario: Precision voltage reference in 16-bit DAC output buffers and multimeter front-end amplifiers. IC Role / Device Role / Timing Role: Provides stable, low-drift bias point for op-amp input stages and analog multiplexers. Use Value: 60 Ω dynamic resistance and −0.02 %/°C TC ensure <±1 LSB error over 0–70°C temperature range. | Use Scenario: Cathode-biased gain-setting node in discrete JFET microphone preamplifiers. IC Role / Device Role / Timing Role: Supplies ultra-low-noise DC bias to JFET gate while rejecting supply ripple. Use Value: 1/3–1/10 noise vs. standard HZ series directly lowers audible hiss floor by ≥10 dB(A). |
| Industrial Sensor Excitation | Programmable Power Supply Feedback |
Use Scenario: Excitation voltage source for RTD and strain gauge Wheatstone bridges in PLC analog input modules. IC Role / Device Role / Timing Role: Delivers stable, low-TC reference to bridge top rail; rejects common-mode supply noise. Use Value: 400 mW rating allows direct series-resistor drive of 1–2 mA bridge currents without external buffer. | Use Scenario: Secondary-side voltage sense element in isolated flyback converters with optocoupler feedback. IC Role / Device Role / Timing Role: Sets output voltage threshold for TL431-compatible shunt regulator ICs. Use Value: Tight 8.3–8.7 V tolerance enables ±0.5% output regulation without calibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4737A | Zener voltage 8.2 V (±5%), rd = 7 Ω typical but higher noise; DO-41 package (larger footprint) | Higher power (1 W) but unsuitable for low-noise analog due to 3× higher noise density | Select only when board space permits DO-41 and noise is non-critical |
| BZX79-C8V2 | Zener voltage 8.2 V (±5%), rd = 15 Ω typical, 500 mW rating; DO-35 package but no low-noise specification | Lacks documented low-noise performance; not validated for audio or precision instrumentation | Acceptable for general-purpose regulation where noise and TC are secondary concerns |
Compared with 1N4737A and BZX79-C8V2, the HZ9B1JRE-E delivers superior noise performance and tighter voltage tolerance in the same DO-35 footprint, making it the preferred choice for analog signal chains requiring <−100 dBu noise floors and <±0.5% reference stability.
Availability
HZ9B1JRE-E is available at Aetrix Electronics and suitable for industrial sensor excitation, low-noise audio biasing, and precision instrumentation reference applications requiring stable component supply and long-term obsolescence management.
Supply support for HZ9B1JRE-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog power devices, and timing solutions for industrial, automotive, and infrastructure markets.
The HZ-L Series Zener diodes were designed specifically for low-noise, high-stability voltage reference applications in precision analog systems-emphasizing reduced noise density, tight voltage tolerance, and predictable temperature coefficients.
FAQ
What is the exact zener voltage range specified for HZ9B1JRE-E?
The HZ9B1JRE-E has a guaranteed zener voltage range of 8.3 V to 8.7 V when tested at IZ = 0.5 mA and Ta = 25°C. This ±0.4 V tolerance is tighter than standard Zener diodes and enables accurate voltage setting without post-production trimming in the HZ9B1JRE-E design.
Does HZ9B1JRE-E have a documented low-noise characteristic?
Yes, the HZ9B1JRE-E datasheet explicitly states its noise level is approximately 1/3 to 1/10 that of the standard HZ series. This low-noise performance is achieved via optimized planar junction processing and is confirmed in Renesas' REJ03G0182-0300 specification document for the HZ-L Series, including the HZ9B1JRE-E variant.
What package type and dimensions does HZ9B1JRE-E use?
HZ9B1JRE-E uses the DO-35 glass axial package (JEITA code GRZZ0002ZB-A), with an orange body, navy blue cathode band, 2.0 mm diameter, and 26.0 mm overall length. Its mass is 0.13 g, and it conforms to SC-40 mechanical standards per the official Renesas package drawing.
What is the maximum power dissipation and thermal limit for HZ9B1JRE-E?
HZ9B1JRE-E has a maximum power dissipation (Pd) of 400 mW at Ta = 25°C and a maximum junction temperature (Tj) of 175°C. Derating begins above 25°C ambient, with full power usable up to ~70°C ambient based on the published power vs. temperature curve in the HZ9B1JRE-E datasheet.
Is HZ9B1JRE-E suitable for surface-mount assembly?
No, HZ9B1JRE-E is a through-hole DO-35 axial device and is not suitable for surface-mount assembly. It requires axial lead insertion and wave or hand soldering. For SMT equivalents, designers should evaluate Renesas' HZ-L Series SMD variants (e.g., HZ9B1JRE-S) separately - the HZ9B1JRE-E itself is strictly through-hole.
HZ9B1JRE-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZ9B1JRE-E FAQ
1.How can I place an order for HZ9B1JRE-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZ9B1JRE-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZ9B1JRE-E reliable?
The price and inventory of HZ9B1JRE-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZ9B1JRE-E is usually 5 days.
3.What payment methods are accepted for HZ9B1JRE-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZ9B1JRE-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZ9B1JRE-E?
HZ9B1JRE-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZ9B1JRE-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZ9B1JRE-E?
For technical support, including HZ9B1JRE-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZ9B1JRE-E requirements.
6.How does Aetrix verify that HZ9B1JRE-E is sourced from the original manufacturer or authorized distributors?
All HZ9B1JRE-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZ9B1JRE-E meets industry standards.
7.What is the process for return or replacement of HZ9B1JRE-E?
All HZ9B1JRE-E units undergo pre-shipment inspection (PSI). If there is an issue with HZ9B1JRE-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZ9B1JRE-E part is unused and in its original packaging.
Return procedure for HZ9B1JRE-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZ9B1JRE-E Tags
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