Renesas HZ9B1LTD-E

Overview

HZ9B1LTD-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage reference and stabilization in precision analog circuits, featuring a nominal zener voltage of 8.5 V (min 8.3 V, max 8.7 V), 400 mW power dissipation, 6.0 Ω dynamic impedance at 0.5 mA test current, and DO-35 glass package with navy-blue cathode band. It is used in low-drift bandgap reference buffers and noise-sensitive instrumentation power rails.

For engineers reviewing the HZ9B1LTD-E datasheet, HZ9B1LTD-E pinout, HZ9B1LTD-E application, or HZ9B1LTD-E equivalent, key selection criteria include zener voltage tolerance (±0.2 V), temperature coefficient (−0.02 %/°C typical near 8.5 V), low leakage (<1 μA at VR = 2.0 V), and compatibility with through-hole PCB assembly in space-constrained analog front-ends.

Technical Context

This device belongs to the HZ-L Series, engineered to deliver approximately 1/3–1/10 lower noise than legacy HZ-series Zeners. Its planar junction structure ensures stable breakdown characteristics and reduced flicker noise under DC bias conditions.

Designed for operation at IZ = 0.5 mA, it achieves rd = 6.0 Ω while maintaining low reverse leakage (≤1 μA) and a negative temperature coefficient optimized for 8–9 V range applications-enabling improved thermal stability when paired with positive-TC components in compensated references.

Key Specifications

Pinout & Package

Package: DO-35 glass axial-lead package (JEITA code GRZZ0002ZB-A), orange body with navy-blue cathode band; lead spacing 26.0 mm, diameter 2.0 mm, mass 0.13 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with HZ9B1LTD-E, MMBZ5233BS-7-F trades through-hole serviceability and ultra-low noise for SMT scalability, while BZX55-C8V2 sacrifices regulation accuracy and noise performance for broad availability and lower unit cost in non-critical roles.

Availability

HZ9B1LTD-E is available at Aetrix Electronics and suitable for instrumentation reference supply, ADC voltage reference buffer, and low-power sensor signal chain applications requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for HZ9B1LTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.

The HZ-L Series was developed specifically for low-noise, high-stability voltage reference applications in test & measurement, audio, and precision analog systems-addressing demand for tighter VZ tolerance and reduced thermal drift versus legacy Zener families.

FAQ

What is the zener voltage tolerance of HZ9B1LTD-E at 0.5 mA test current?

HZ9B1LTD-E has a zener voltage range of 8.3 V minimum to 8.7 V maximum at IZ = 0.5 mA, yielding a nominal 8.5 V with ±0.2 V absolute tolerance. This tight specification supports precision biasing in analog circuits where reference accuracy directly impacts system linearity and measurement repeatability. The HZ9B1LTD-E datasheet confirms this range under DC test conditions per REJ03G0182-0300 Rev.3.00.

Does HZ9B1LTD-E have a specified temperature coefficient, and how does it affect reference stability?

HZ9B1LTD-E exhibits a temperature coefficient of approximately −0.02 %/°C near its 8.5 V operating point, as shown in Figure 2 of the HZ-L Series datasheet. This low, predictable drift enables stable performance across 0–70°C ambient ranges without external compensation-critical for HZ9B1LTD-E use in unregulated environments like portable instrumentation and industrial sensor nodes.

What is the maximum power dissipation rating for HZ9B1LTD-E, and how does it scale with ambient temperature?

HZ9B1LTD-E is rated for 400 mW maximum power dissipation at Ta = 25°C, derating linearly to zero at 175°C junction temperature. Per Figure 3 in the datasheet, usable power drops to ~200 mW at 75°C ambient-making HZ9B1LTD-E suitable for enclosed industrial enclosures without heatsinking when operated below 0.5 mA. This thermal profile is confirmed in Absolute Maximum Ratings Table on page 2.

Is HZ9B1LTD-E compatible with lead-free soldering processes?

Yes, HZ9B1LTD-E's DO-35 glass package and internal construction meet JEDEC J-STD-020 moisture sensitivity level 1 requirements and support standard lead-free reflow profiles (peak 260°C). Renesas confirms RoHS compliance per EU Directive 2011/65/EU in the product documentation, and the HZ9B1LTD-E marking includes "TD-E" suffix indicating lead-free termination per Renesas packaging standards.

How does the noise performance of HZ9B1LTD-E compare to standard Zener diodes in the same voltage class?

HZ9B1LTD-E delivers approximately 1/3–1/10 lower noise than conventional HZ-series Zeners due to its optimized silicon planar junction process, as stated in the Features section of REJ03G0182-0300. This reduction directly improves signal integrity in low-level analog paths-such as those found in HZ9B1LTD-E–based reference buffers for 24-bit delta-sigma ADCs-where broadband noise contributes to effective resolution loss.