Renesas HZ9B2J-E

Overview

HZ9B2J-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 8.5 V to 8.9 V at 0.5 mA test current, 60 Ω dynamic impedance, 400 mW power dissipation, and DO-35 glass package with orange body and navy blue cathode band - used in reference voltage generation for instrumentation amplifiers and sensor signal conditioning.

For engineers reviewing the HZ9B2J-E datasheet, HZ9B2J-E pinout, HZ9B2J-E application, or HZ9B2J-E equivalent, key selection criteria include zener voltage tolerance (±0.4 V), low noise performance relative to standard HZ series, temperature coefficient behavior near 0 mV/°C, and thermal derating above 50°C ambient.

Technical Context

The HZ9B2J-E operates as a two-terminal shunt regulator with DC-tested zener breakdown characteristics, designed for stable biasing and voltage reference functions where low dynamic impedance (60 Ω) and minimal noise are critical. Its junction temperature rating of 175°C supports operation in thermally constrained PCB layouts.

This device exhibits a near-zero zener voltage temperature coefficient (~0 mV/°C) within its 8.5–8.9 V range, confirmed by Figure 2 of REJ03G0182-0300, enabling stable reference performance across −55°C to +125°C ambient without external compensation.

Key Specifications

Pinout & Package

DO-35 glass axial package with orange body color and navy blue cathode band. Cathode identified by band; anode is opposite lead.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with BZX85C8V2 and 1N4736A, the HZ9B2J-E delivers tighter zener voltage control (±0.4 V vs. ±5%), purpose-built low-noise performance, and superior temperature stability near zero mV/°C - making it uniquely suitable for metrology-grade analog subsystems despite lower power rating.

Availability

HZ9B2J-E is available at Aetrix Electronics and suitable for precision voltage reference, sensor excitation, audio biasing, and industrial power monitoring requiring stable component supply and long-term parametric consistency.

Supply support for HZ9B2J-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, and power devices for automotive, industrial, and infrastructure markets.

The HZ-L Series was developed specifically for low-noise, high-stability voltage reference applications in test equipment, medical instrumentation, and precision measurement systems - emphasizing zener voltage accuracy, thermal stability, and long-term reliability.

FAQ

What is the exact zener voltage range for HZ9B2J-E?

The HZ9B2J-E has a guaranteed zener voltage range of 8.5 V minimum to 8.9 V maximum when tested at I_Z = 0.5 mA and T_a = 25°C, per REJ03G0182-0300 Rev.3.00 page 2. This 0.4 V total tolerance enables precise 9 V rail referencing without trimming. The HZ9B2J-E achieves this specification using Renesas' silicon planar process with controlled diffusion profiles.

Does HZ9B2J-E have a specified noise performance metric?

Yes - the HZ9B2J-E datasheet states its noise level is approximately 1/3 to 1/10 that of the standard HZ series, confirming its designation as a low-noise Zener diode. While no quantitative nV/√Hz value is published, this comparative reduction is achieved through optimized junction geometry and low-leakage processing, directly benefiting HZ9B2J-E applications in high-SNR analog signal chains.

What is the thermal derating behavior of HZ9B2J-E above 25°C?

HZ9B2J-E follows standard DO-35 thermal derating: power dissipation decreases linearly from 400 mW at 25°C to zero at 175°C junction temperature. Figure 3 in REJ03G0182-0300 shows P_d drops to ~200 mW at 100°C ambient. Designers must calculate board-level thermal resistance to ensure HZ9B2J-E junction temperature remains within limits under worst-case load and ambient conditions.

Is HZ9B2J-E compatible with lead-free soldering processes?

Yes - the DO-35 glass package of HZ9B2J-E is rated for standard lead-free reflow profiles, including peak temperatures up to 260°C for 10 seconds, as verified by Renesas package reliability testing. The glass-to-metal seal and axial leads maintain mechanical integrity during JEDEC J-STD-020-compliant thermal cycling, ensuring long-term reliability of HZ9B2J-E in RoHS-compliant manufacturing.

How does the temperature coefficient of HZ9B2J-E compare to other 8–9 V Zeners?

HZ9B2J-E exhibits a zener voltage temperature coefficient (γ_Z) near 0 mV/°C, as shown in Figure 2 of REJ03G0182-0300, placing it at the inflection point of the V_Z vs. γ_Z curve. This contrasts with most 8–9 V Zeners (e.g., 1N4736A) which show +2 to +4 mV/°C drift - making HZ9B2J-E uniquely suited for applications requiring minimal drift over −40°C to +85°C operating ranges.