Renesas HZ9B3L-E

Overview

HZ9B3L-E from Renesas is a silicon planar Zener diode engineered for low-noise voltage regulation in precision analog circuits, with a nominal zener voltage of 8.7–9.1 V, dynamic resistance of 60 Ω at 0.5 mA, maximum power dissipation of 400 mW, and junction temperature rating up to 175°C - deployed in stabilized power supplies and reference voltage generators.

For engineers reviewing the HZ9B3L-E datasheet, HZ9B3L-E pinout, HZ9B3L-E application, or HZ9B3L-E equivalent, key selection criteria include zener voltage tolerance (±0.2 V), low noise performance (1/3–1/10 lower than standard HZ series), DO-35 package compatibility, thermal stability across −55°C to +175°C, and suitability for low-current biasing in instrumentation amplifiers and sensor signal conditioning.

Technical Context

This device operates as a two-terminal voltage reference using avalanche breakdown in a planar-diffused silicon junction. Its low dynamic impedance (60 Ω) and tight zener voltage tolerance (8.7–9.1 V at 0.5 mA) enable stable regulation under light-load conditions typical in analog front-ends and calibration circuits.

The HZ9B3L-E exhibits a zener voltage temperature coefficient near zero (≈0 mV/°C) within its operating range, confirmed by Figure 2 of REJ03G0182-0300, and maintains low leakage current (<1 μA at VR = 2.0 V), supporting high-impedance node stabilization without loading error.

Key Specifications

Pinout & Package

Package: DO-35 (JEITA code GRZZ0002ZB-A), glass axial leaded case with navy blue cathode band; body color orange; mass 0.13 g; dimensions per SC-40 standard (φD = 2.0 mm, L = 26.0 mm, E = 4.2 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with 1N4739A and BZX55C9V1, the HZ9B3L-E delivers tighter voltage tolerance (±0.2 V vs. ±5%), significantly lower noise, and optimized low-current regulation at 0.5 mA - making it preferable for battery-powered precision instruments where bias current and spectral purity are constrained.

Availability

HZ9B3L-E is available at Aetrix Electronics and suitable for stabilized power supplies, precision analog references, sensor signal conditioning, and portable calibration equipment requiring stable component supply with consistent parametric performance across production lots.

Supply support for HZ9B3L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog mixed-signal devices, and power management ICs, with global R&D and manufacturing infrastructure.

The HZ-L Series Zener diodes were developed specifically for low-noise, high-stability voltage reference applications in test & measurement, industrial automation, and medical instrumentation - emphasizing precision, thermal robustness, and repeatable parametric behavior.

FAQ

What is the exact zener voltage range specified for HZ9B3L-E?

The HZ9B3L-E has a guaranteed zener voltage range of 8.7 V to 9.1 V when tested at I_Z = 0.5 mA and T_a = 25°C, as documented in the Electrical Characteristics table on page 2 of REJ03G0182-0300. This ±0.2 V window reflects tighter tolerance than standard Zener diodes and supports accurate 9 V reference design without external trimming. The HZ9B3L-E achieves this via controlled planar diffusion and low-noise junction design.

Does HZ9B3L-E support operation at elevated ambient temperatures?

Yes, the HZ9B3L-E is rated for storage from −55°C to +175°C and operates reliably up to a junction temperature of 175°C. Its power derating curve (Figure 3, page 4) shows usable dissipation down to ~200 mW at 100°C ambient, enabling deployment in engine control units and industrial PLCs. The HZ9B3L-E's thermal robustness stems from its silicon planar construction and glass DO-35 package.

How does the noise performance of HZ9B3L-E compare to standard Zener diodes?

The HZ9B3L-E exhibits approximately 1/3 to 1/10 the broadband voltage noise of conventional HZ-series Zeners, as stated in the Features section (page 1). This reduction is achieved through optimized junction geometry and low-leakage processing - directly improving SNR in applications like audio preamplifiers and high-resolution ADC references. The HZ9B3L-E's low-noise trait is intrinsic to its HZ-L Series designation and verified in Renesas characterization.

What is the maximum reverse leakage current for HZ9B3L-E?

The HZ9B3L-E specifies a maximum reverse leakage current (I_R) of 1 μA when tested at V_R = 2.0 V and T_a = 25°C, per the Electrical Characteristics table. This low leakage minimizes error in high-impedance bias networks and reference dividers. The HZ9B3L-E maintains this specification across its full storage temperature range, supporting reliable operation in battery-backed circuits.

Is HZ9B3L-E compatible with automated PCB assembly processes?

Yes, the HZ9B3L-E uses the industry-standard DO-35 package (JEITA code GRZZ0002ZB-A) with axial leads and defined dimensions (φD = 2.0 mm, L = 26.0 mm), fully compatible with wave soldering, selective soldering, and hand-soldering. Its glass body and navy blue cathode band allow optical orientation detection. The HZ9B3L-E's 0.13 g mass and mechanical robustness support high-yield placement in SMT-compatible through-hole workflows.