Renesas HZ9C2-E

Overview

HZ9C2-E from Renesas is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized DC power supplies, featuring a nominal zener voltage of 9.3–9.7 V at 5 mA, 500 mW power dissipation, and dynamic resistance of 20 Ω - deployed in applications such as reference voltage generation for analog sensors and overvoltage clamping in microcontroller I/O protection circuits.

For engineers reviewing the HZ9C2-E datasheet, HZ9C2-E pinout, HZ9C2-E application, or HZ9C2-E equivalent, key selection criteria include verified zener voltage tolerance (±0.4 V), low leakage current (≤1 µA at VR = 7.5 V), thermal coefficient behavior (−0.04 %/°C typical), and DO-35 package compatibility with manual or wave-soldered PCB assembly.

Technical Context

The HZ9C2-E operates as a two-terminal shunt regulator, maintaining stable output voltage across load variations by conducting reverse-biased current above its breakdown threshold. Its silicon planar construction ensures reproducible V_Z and low temperature drift, with junction temperature limited to 175°C for reliability in ambient temperatures up to 100°C.

Electrical performance is specified under DC test conditions at T_a = 25°C: zener voltage measured at I_Z = 5 mA, dynamic resistance derived at same bias, and reverse current guaranteed ≤1 µA at V_R = 7.5 V - confirming suitability for low-noise, low-current reference nodes.

Key Specifications

Pinout & Package

Package: DO-35 glass axial lead package (JEITA code GRZZ0002ZB-A), 2.0 mm diameter × 26.0 mm length, 0.13 g mass, navy blue cathode band marking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Compared with 1N4739A and BZX55-C9V1, the HZ9C2-E delivers tighter zener voltage tolerance (±0.4 V vs. ±5%), lower dynamic resistance (20 Ω vs. ≥30 Ω), and optimized temperature coefficient for high-accuracy analog systems - making it preferred for sensor references and regulated feedback paths where long-term stability matters.

Availability

HZ9C2-E is available at Aetrix Electronics and suitable for industrial sensor reference, microcontroller I/O protection, and low-power battery monitor applications requiring stable component supply, traceable lot control, and long-lifecycle availability.

Supply support for HZ9C2-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog power devices, and timing solutions for industrial, automotive, and infrastructure markets.

The HZ Series Zener diodes were developed specifically for high-stability voltage reference and overvoltage protection in resource-constrained embedded systems - emphasizing low leakage, tight V_Z grading, and DO-35 manufacturability.

FAQ

What is the exact zener voltage range for HZ9C2-E?

The HZ9C2-E has a guaranteed zener voltage range of 9.3 V to 9.7 V when tested at I_Z = 5 mA and T_a = 25°C. This ±0.4 V tolerance reflects Grade C specification within the HZ9 family and is confirmed in the REJ03G0180-0600 datasheet, page 3. The HZ9C2-E achieves this tighter grading versus standard commercial Zeners, supporting precision analog designs where reference stability is critical.

Is HZ9C2-E compatible with lead-free reflow soldering processes?

The HZ9C2-E uses a DO-35 glass package rated for peak reflow temperatures up to 260°C per JEDEC J-STD-020, making it compatible with standard lead-free soldering profiles. Its glass-to-metal seal and axial leads withstand thermal cycling without cracking or parameter shift. The HZ9C2-E maintains full electrical specifications after exposure to IPC-A-610 Class 2 reflow cycles, ensuring reliability in automated PCB assembly.

Does HZ9C2-E have a specified temperature coefficient?

Yes - the HZ9C2-E exhibits a typical zener voltage temperature coefficient (γ_Z) of −0.04 %/°C, as shown in Figure 2 of the REJ03G0180-0600 datasheet. This negative coefficient indicates V_Z decreases slightly with rising temperature, enabling predictable compensation in multi-stage references. The value is measured across the 9–10 V range and applies to the HZ9C2-E specifically, not extrapolated from adjacent grades.

Can HZ9C2-E replace BZX55-C9V1 in existing designs?

The HZ9C2-E can serve as a functional upgrade to BZX55-C9V1 in most DO-35-based designs, offering tighter V_Z tolerance (±0.4 V vs. ±5%) and lower dynamic resistance (20 Ω vs. 30 Ω). However, because BZX55-C9V1 specifies 9.1 V nominal while HZ9C2-E is 9.3–9.7 V, circuit validation is required for applications sensitive to absolute reference voltage. The HZ9C2-E retains identical pinout and package dimensions, simplifying layout reuse.

What is the maximum reverse leakage current for HZ9C2-E?

The HZ9C2-E guarantees reverse leakage current (I_R) ≤1 µA when tested at V_R = 7.5 V and T_a = 25°C, per the Electrical Characteristics table on page 3 of REJ03G0180-0600. This low leakage supports high-impedance bias networks and extends battery life in always-on monitoring circuits. Measured values typically fall below 0.5 µA, and the specification remains valid up to T_j = 125°C with minor degradation.