Renesas HZ9C2J-E

Overview

HZ9C2J-E from Renesas is a silicon planar Zener diode engineered for low-noise voltage regulation in precision analog circuits, with a nominal zener voltage of 9.1–9.5 V, dynamic resistance of 60 Ω at 0.5 mA, maximum power dissipation of 400 mW, and junction temperature rating up to 175°C - deployed in reference supplies for ADCs, sensor signal conditioning, and low-drift instrumentation amplifiers.

For engineers reviewing the HZ9C2J-E datasheet, HZ9C2J-E pinout, HZ9C2J-E application, or HZ9C2J-E equivalent, key selection criteria include its DO-35 package, low noise performance (≈1/3–1/10 of standard HZ series), tight zener voltage tolerance, temperature coefficient behavior near zero crossing (~0.02%/°C at ~9.3 V), and suitability for stable biasing in high-precision linear systems.

Technical Context

The HZ9C2J-E operates as a two-terminal shunt regulator with DC-tested zener characteristics, optimized for low-noise operation via reduced junction area and refined diffusion process. Its dynamic resistance of 60 Ω at I_Z = 0.5 mA enables stable regulation under light-load conditions typical in reference circuits.

It exhibits a zener voltage temperature coefficient near zero (≈0.02%/°C) within its 9.1–9.5 V range, minimizing drift across ambient temperatures; absolute maximum ratings specify P_d = 400 mW and T_j = 175°C, supporting reliable operation in compact PCB layouts with limited thermal mass.

Key Specifications

Pinout & Package

Package: DO-35 (JEITA code GRZZ0002ZB-A, Renesas code SC-40), glass axial leaded, orange body with navy blue cathode band, 2.0 mm diameter × 26.0 mm length, 0.13 g typical mass.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode reference applications.

Compared with BZX84-C9V1 and 1N5239B, the HZ9C2J-E delivers superior noise performance and tighter V_Z control at 0.5 mA bias, making it optimal for ultra-low-drift, low-power reference designs - though its DO-35 package requires axial lead routing and manual or wave soldering.

Availability

HZ9C2J-E is available at Aetrix Electronics and suitable for high-precision reference supply, sensor signal conditioning, and instrumentation amplifier biasing requiring stable component supply, long-term parametric consistency, and traceable manufacturing origin.

Supply support for HZ9C2J-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT applications, with emphasis on reliability and system-level integration.

The HZ-L Series Zener diodes were designed specifically for low-noise, high-stability voltage reference applications in precision analog systems - targeting instrumentation, medical devices, and test equipment where voltage drift and broadband noise directly impact measurement fidelity.

FAQ

What is the zener voltage range specified for the HZ9C2J-E?

The HZ9C2J-E has a guaranteed zener voltage range of 9.1 V to 9.5 V when tested at I_Z = 0.5 mA and T_a = 25°C. This narrow 0.4 V window reflects tight process control for precision reference applications. The value is DC-tested per Renesas specification REJ03G0182-0300 Rev.3.00, and the HZ9C2J-E must be operated within this range to meet its low-noise and low-impedance specifications.

Does the HZ9C2J-E have a documented temperature coefficient, and what is its significance?

Yes, the HZ9C2J-E exhibits a zener voltage temperature coefficient near zero - approximately +0.02%/°C at its nominal 9.3 V point - as shown in Figure 2 of the Renesas datasheet. This near-zero crossing minimizes voltage drift over temperature, making the HZ9C2J-E especially valuable in applications like medical sensor biasing and precision data acquisition where reference stability across −25°C to +70°C is critical. The HZ9C2J-E achieves this via optimized doping and junction geometry.

What is the maximum power dissipation rating for the HZ9C2J-E, and how does it affect layout design?

The HZ9C2J-E has a maximum power dissipation (P_d) of 400 mW at T_a = 25°C, derating linearly above that ambient temperature per Figure 3 in the datasheet. Because it uses a DO-35 glass package with limited thermal mass, PCB layout must provide adequate copper area and airflow - especially if operating near rated power. The HZ9C2J-E should not be placed adjacent to heat-generating components, and its leads should remain ≥5 mm long to avoid thermal conduction into the board. Derating curves must be consulted for operation above 25°C.

How does the noise performance of the HZ9C2J-E compare to standard Zener diodes?

The HZ9C2J-E delivers approximately 1/3 to 1/10 the broadband voltage noise of conventional HZ-series Zeners, achieved through proprietary planar processing and reduced junction area. This low-noise characteristic is verified in Renesas' characterization and directly improves SNR in high-resolution analog circuits - for example, reducing reference-induced noise floor by >10 dB in 24-bit ADC front-ends. The HZ9C2J-E's noise advantage is most pronounced below 10 kHz and remains effective up to 100 kHz.

Is the HZ9C2J-E suitable for surface-mount assembly, and what is its package type?

No, the HZ9C2J-E is not suitable for surface-mount assembly. It uses the DO-35 axial-leaded glass package (JEITA code GRZZ0002ZB-A, Renesas SC-40), with orange body and navy blue cathode band. This through-hole package requires manual or wave soldering and cannot be reflowed. For SMT alternatives, consider the BZX84-C9V1 - but note its higher dynamic resistance and noise. The HZ9C2J-E's DO-35 form factor is intentional for thermal and noise performance trade-offs in precision through-hole designs.