Renesas HZ9C3LTD-E

Overview

HZ9C3LTD-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage reference and precision stabilization in analog signal chains and power supply feedback paths, with a nominal zener voltage of 9.3–9.7 V at 0.5 mA, dynamic resistance of 60 Ω, and maximum power dissipation of 400 mW in DO-35 package. It serves in high-stability reference circuits for instrumentation amplifiers, ADC voltage references, and regulated power supplies where noise performance is critical.

For engineers reviewing the HZ9C3LTD-E datasheet, HZ9C3LTD-E pinout, HZ9C3LTD-E application, or HZ9C3LTD-E equivalent, this part is selected for its 1/3–1/10 lower diode noise versus legacy HZ series, tight zener voltage tolerance, low leakage, and stable temperature coefficient - key criteria when designing low-drift analog front-ends, sensor excitation sources, and calibration-grade references.

Technical Context

The HZ9C3LTD-E operates as a two-terminal, DC-biased voltage reference device with a specified zener breakdown mechanism in the 9.3–9.7 V range. Its low dynamic resistance (60 Ω at I_Z = 0.5 mA) ensures minimal output impedance under varying load conditions, while its −55 to +175 °C storage temperature range supports industrial deployment.

Designed for low-noise applications, the HZ9C3LTD-E achieves reduced noise through optimized silicon planar junction processing - distinct from standard Zener or avalanche diodes - and exhibits a zener voltage temperature coefficient near zero crossing in the 9–10 V range, confirmed by Figure 2 in the official datasheet.

Key Specifications

Pinout & Package

Package: DO-35 glass axial-leaded package (Renesas JEITA code GRZZ0002ZB-A), 2.0 mm diameter × 26.0 mm length, 0.13 g typical mass, orange body with navy blue cathode band.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with MMBZ5240BLT1G and BZX55-C9V1, the HZ9C3LTD-E delivers uniquely low noise and tighter V_Z tolerance in through-hole DO-35 form, making it irreplaceable in high-fidelity analog reference designs despite higher unit cost.

Availability

HZ9C3LTD-E is available at Aetrix Electronics and suitable for instrumentation amplifier reference, ADC voltage reference, and regulated power supply feedback applications requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial and test equipment programs.

Supply support for HZ9C3LTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZ-L Series Zener diodes were developed by Renesas to address demand for ultra-low-noise, high-stability voltage references in precision analog systems - extending the legacy HZ series with improved noise performance and tighter parametric control.

FAQ

What is the zener voltage tolerance of HZ9C3LTD-E at 0.5 mA test current?

The HZ9C3LTD-E has a zener voltage range of 9.3 V minimum to 9.7 V maximum when tested at I_Z = 0.5 mA, yielding a ±0.2 V absolute tolerance around the nominal 9.5 V point. This tight spread reduces post-production calibration effort in precision reference designs and is confirmed in the "Electrical Characteristics" table on page 2 of Renesas document REJ03G0182-0300 Rev.3.00.

Does HZ9C3LTD-E have a specified temperature coefficient, and where is it documented?

Yes, the HZ9C3LTD-E exhibits a zener voltage temperature coefficient (γ_Z) near zero in the 9–10 V range, as shown in Figure 2 ("Temperature Coefficient vs. Zener voltage") on page 4 of the official Renesas datasheet REJ03G0182-0300 Rev.3.00. The curve confirms γ_Z crosses zero between 9.0 and 9.5 V, supporting stable reference performance across −40 to +85 °C ambient.

Can HZ9C3LTD-E replace standard HZ-series Zener diodes without circuit modification?

Yes, the HZ9C3LTD-E is a direct drop-in replacement for HZ9C3L in DO-35 package with identical pinout, voltage rating, and power dissipation. Its primary upgrade is ~70% lower noise - verified in Renesas' comparative testing - so no schematic or layout changes are needed to realize improved SNR in existing HZ-based reference designs.

What is the maximum reverse leakage current for HZ9C3LTD-E, and under what condition is it measured?

The maximum reverse leakage current for HZ9C3LTD-E is 1 μA, measured at V_R = 2.0 V (page 2, "Electrical Characteristics" table). This low leakage ensures minimal current draw in high-impedance reference divider networks and prevents measurable error in µA-level bias circuits used with op-amps or ADC reference inputs.

Is HZ9C3LTD-E compliant with RoHS and halogen-free requirements?

Yes, HZ9C3LTD-E complies with EU RoHS Directive 2011/65/EU and is halogen-free per Renesas' environmental policy. Compliance is confirmed in Renesas' product environmental reports and material declarations accessible via their website (www.renesas.com/en/environment), and the device carries the standard RoHS marking on packaging labels.