Renesas HZ9HB2-E

Overview

HZ9HB2-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 8.7 V (min 8.5 V, max 8.9 V), dynamic resistance of 60 Ω at 0.5 mA, maximum power dissipation of 400 mW, and junction temperature rating up to 175°C. It is used in stabilized power supplies and reference circuits where low noise and stable voltage output are critical.

For engineers reviewing the HZ9HB2-E datasheet, HZ9HB2-E pinout, HZ9HB2-E application, or HZ9HB2-E equivalent, this part delivers verified low-noise performance, DO-35 package compatibility, precise 8.5–8.9 V zener tolerance, and thermal stability across −55°C to +175°C operating range - key selection criteria for analog reference design and low-drift biasing.

Technical Context

This device operates as a two-terminal voltage reference using avalanche breakdown in a silicon planar structure, with noise level approximately 1/3–1/10 that of standard HZ-series Zeners. Its low leakage current (<1 μA at VR = 2.0 V) and low zener impedance support high-accuracy regulation in low-current bias networks.

The HZ9HB2-E is specified for DC test conditions only and exhibits a zener voltage temperature coefficient near zero (±0.02%/°C typical at ~8.7 V), confirmed by Figure 2 in REJ03G0182-0300. Its DO-35 package enables through-hole mounting on standard PCBs with 2.0 mm body diameter and 26.0 mm lead length.

Key Specifications

Pinout & Package

Package: DO-35 (JEITA code GRZZ0002ZB-A), glass axial package with orange body and navy blue cathode band; dimensions: φD = 2.0 mm, L = 26.0 mm, mass ≈ 0.13 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with 1N4737A and BZX55C8V2, the HZ9HB2-E provides uniquely low noise and tighter 8.5–8.9 V regulation at 400 mW - making it preferred for precision analog references where spectral purity and thermal stability outweigh raw power capacity.

Availability

HZ9HB2-E is available at Aetrix Electronics and suitable for stabilized power supply design, precision instrumentation reference circuits, and low-noise audio biasing requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for HZ9HB2-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog power devices, and timing solutions for industrial, automotive, and infrastructure markets.

The HZ-L Series Zener diodes were designed specifically for low-noise voltage reference applications in high-fidelity analog systems, emphasizing reduced noise, tight V_Z tolerance, and robust thermal performance over general-purpose regulation.

FAQ

What is the exact zener voltage range for HZ9HB2-E?

The HZ9HB2-E has a guaranteed zener voltage range of 8.5 V to 8.9 V when tested at I_Z = 0.5 mA, per REJ03G0182-0300 Rev.3.00. This 0.4 V span reflects its "B2" variant designation within the HZ9x family and enables precise voltage setting without post-assembly trimming. The HZ9HB2-E achieves this specification using Renesas' silicon planar process with controlled avalanche characteristics.

Is HZ9HB2-E compatible with standard DO-35 footprint layouts?

Yes, the HZ9HB2-E uses the JEITA-standard DO-35 package (code GRZZ0002ZB-A) with 2.0 mm body diameter and 26.0 mm lead length, matching industry-standard axial-leaded PCB footprints. Its orange body and navy blue cathode band provide visual polarity identification, and the HZ9HB2-E requires no layout adaptation when replacing other DO-35 Zeners with identical lead spacing.

How does the noise performance of HZ9HB2-E compare to generic Zener diodes?

The HZ9HB2-E exhibits approximately 1/3 to 1/10 the noise level of standard HZ-series Zeners, as confirmed in the "Features" section of REJ03G0182-0300. This reduction stems from optimized silicon planar construction and process controls - not external filtering - making the HZ9HB2-E suitable for direct use in low-noise op-amp references and audio bias networks without supplemental RC suppression.

What is the maximum allowable reverse current before breakdown for HZ9HB2-E?

The HZ9HB2-E specifies a maximum reverse current I_R of 1 μA at V_R = 2.0 V, measured at T_a = 25°C. This low leakage ensures minimal parasitic loading in high-impedance reference nodes and supports battery-powered applications where standby current must remain below 1 μA. The HZ9HB2-E maintains this spec across its full storage temperature range of −55°C to +175°C.

Can HZ9HB2-E be used in surface-mount designs?

No, the HZ9HB2-E is exclusively offered in the through-hole DO-35 axial package and lacks an SMD variant. Its 26.0 mm lead length and glass body require wave or hand soldering into plated-through holes. For surface-mount equivalents, engineers should evaluate Renesas' HZ-L Series SOD-123 variants (e.g., HZ9HB2F) - the HZ9HB2-E itself is not suitable for reflow or pick-and-place assembly.