Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas HZC12TRF-E

Part No.:
HZC12TRF-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixHZC12TRF-E.pdf
Description:
DIODE ZENER
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:74,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

HZC12TRF-E from Renesas Electronics is a silicon epitaxial planar Zener diode optimized for surge absorption in low-power signal and interface protection circuits, featuring a nominal Zener voltage of 12.0 V (min 11.42 V, max 12.60 V), 150 mW power dissipation, 35 Ω dynamic resistance at 5 mA, and ±30 kV ESD capability per IEC 61000-4-2 (C = 150 pF, R = 330 Ω). It is used in USB port transient suppression and microcontroller I/O rail clamping.

For engineers reviewing the HZC12TRF-E datasheet, HZC12TRF-E pinout, HZC12TRF-E application, or HZC12TRF-E equivalent, key selection criteria include Zener voltage tolerance, dynamic impedance at rated test current, ESD robustness, thermal derating behavior, and UFP package compatibility with high-density SMT layouts.

Technical Context

The HZC12TRF-E operates as a precision voltage reference and transient voltage suppressor in reverse-biased mode, with Zener breakdown engineered for stable regulation under low-current conditions (IZ = 5 mA). Its temperature coefficient is +0.07 %/°C (≈ +0.84 mV/°C) near 12 V, minimizing drift across −25°C to +85°C ambient ranges.

Designed for surface-mount surge absorb applications, it uses an ultra-small Flat Lead Package (UFP, JEITA code SC-79) with two terminals and no internal series resistance or integrated capacitor. The device exhibits no switching latency or recovery time specification, functioning purely as a passive clamping element.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 11.42–12.60 V at IZ = 5 mA - defines clamping threshold for overvoltage events on 12 V rails
Power Dissipation (Pd) 150 mW at Ta = 25°C - limits sustained energy absorption; derates linearly to zero at 150°C junction
Dynamic Resistance (rd) 35 Ω max at IZ = 5 mA - determines voltage rise under transient current surge (ΔV = Isurge × rd)
Reverse Current (IR) 0.5 µA max at VR = 9.0 V - ensures minimal leakage loading on protected signal lines
ESD Capability ±30 kV contact discharge (IEC 61000-4-2) - qualifies for direct integration into unshielded consumer I/O ports
Junction Temperature (Tj) −55°C to +150°C - supports operation in industrial ambient environments without external heatsinking

Pinout & Package

Package: Ultra Small Flat Lead (UFP), JEITA SC-79, Renesas code PWSF0002ZA-A, dimensions 1.70 × 1.20 × 0.60 mm (L × W × H), mass 0.0016 g.

Pin/Terminal Circuit Role Design Meaning
1 Cathode Connected to protected line (e.g., USB D+); conducts when voltage exceeds VZ
2 Anode Connected to ground or lower-potential rail; completes clamping path during transients

Key Features

Feature Design Value
Ultra-small UFP package Enables placement within 0.5 mm of high-speed signal traces without parasitic inductance penalty
Taped delivery Supports automated pick-and-place assembly at ≥10,000 units/hour throughput
High ESD immunity Withstands ≥30 kV contact discharge without parameter shift or catastrophic failure
Low leakage current Sub-µA reverse current preserves battery life in always-on sensor nodes and portable devices
Stable Zener voltage tolerance ±4.7% total variation (11.42–12.60 V) enables reliable margining against 12 V nominal rails

Applications

USB 2.0 Data Line Protection Microcontroller GPIO Clamping

Use Scenario: Protecting D+ and D− lines of embedded USB peripherals from ESD and cable-induced surges.

IC Role / Device Role / Timing Role: Passive bidirectional voltage clamp placed directly at connector footprint.

Use Value: Prevents latch-up or oxide damage in USB transceivers by limiting peak voltage to ≤12.6 V during 30 kV ESD events.

Use Scenario: Safeguarding 3.3 V or 5 V GPIO pins of ARM Cortex-M MCUs against accidental 12 V miswiring or inductive kickback.

IC Role / Device Role / Timing Role: Standoff Zener connected between I/O pin and ground to shunt fault current before MCU input structure fails.

Use Value: Enables robust field deployment without external series resistors or TVS arrays, reducing BOM count by one component per protected pin.

Industrial Sensor Signal Conditioning Automotive Body Control Module Inputs

Use Scenario: Stabilizing analog sensor outputs (e.g., thermistor bridges) referenced to 12 V supply in factory automation PLC modules.

IC Role / Device Role / Timing Role: Precision Zener reference providing local 12 V stabilization for op-amp bias networks.

Use Value: Maintains <±0.1% output stability over −25°C to +85°C due to predictable +0.07%/°C tempco and low rd.

Use Scenario: Suppressing load-dump transients on LIN bus slave node inputs in automotive door modules.

IC Role / Device Role / Timing Role: First-stage clamping device ahead of dedicated LIN transceiver ICs.

Use Value: Absorbs up to 150 mW pulse energy from ISO 7637-2 Pulse 5a events without degradation, extending system-level surge test margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode surge absorb applications.

Alternative Part Technical Difference Application Difference Selection Advice
BZX584-C12 (Nexperia) Same 12 V nominal Zener, but ±5% tolerance (11.4–12.7 V), 300 mW Pd, SOD-523 package (1.3 × 0.8 mm) Larger power handling allows longer surge duration; slightly larger footprint may impact ultra-dense layouts Prefer when higher single-pulse energy absorption is required and board space permits 0.5 mm larger length
MMBZ5242B (ON Semiconductor) 12.05 V nominal (11.4–12.7 V), 350 mW Pd, SOT-23 package (3.0 × 1.4 mm), 10 Ω rd Lower dynamic resistance improves clamping sharpness; SOT-23 requires more PCB area and has higher parasitic inductance Choose when tighter voltage regulation under varying current is critical and layout allows 2.2× larger footprint

Compared with HZC12TRF-E, BZX584-C12 offers higher power margin in same form factor while MMBZ5242B delivers superior regulation accuracy at the cost of significantly larger package size and reduced high-frequency transient response.

Availability

HZC12TRF-E is available at Aetrix Electronics and suitable for USB interface protection, microcontroller I/O clamping, and industrial sensor reference applications requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for HZC12TRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and advanced SoCs for industrial, automotive, and enterprise systems.

HZC12TRF-E belongs to the HZC Series of silicon epitaxial planar Zener diodes, designed specifically for compact, high-reliability surge absorption in space-constrained consumer and industrial electronics.

FAQ

What is the Zener voltage tolerance of HZC12TRF-E?

The HZC12TRF-E has a guaranteed Zener voltage range of 11.42 V to 12.60 V at 5 mA test current, representing a ±4.7% tolerance about the nominal 12.0 V rating. This tight spread ensures consistent clamping performance across production lots and supports robust design margining for 12 V system rails. The HZC12TRF-E datasheet specifies this range under standard test conditions (Ta = 25°C, pulse width = 40 ms).

Does HZC12TRF-E meet industrial temperature requirements?

Yes, HZC12TRF-E is rated for junction temperatures from −55°C to +150°C and storage temperatures from −55°C to +150°C. Its electrical characteristics-including Zener voltage, dynamic resistance, and leakage current-are specified at 25°C but remain stable across the full industrial range (−40°C to +85°C ambient), making HZC12TRF-E suitable for use in programmable logic controllers, motor drives, and outdoor sensor nodes.

Can HZC12TRF-E be used for bidirectional ESD protection?

No-HZC12TRF-E is a unidirectional Zener diode configured for cathode-to-anode conduction only. It provides effective clamping when the cathode is biased above the anode by ≥12 V, but offers no protection against negative-going transients on the anode side. For bidirectional protection, two HZC12TRF-E devices must be connected in series opposition, or a dedicated bidirectional TVS like the ESD9X3.3S should be selected instead.

What is the thermal derating behavior of HZC12TRF-E?

HZC12TRF-E's power dissipation derates linearly from 150 mW at 25°C ambient to 0 mW at 150°C junction temperature. The derating slope is −1.25 mW/°C above 25°C, calculated as 150 mW ÷ (150°C − 25°C). Designers must calculate actual junction temperature using θJA ≈ 800°C/W (typical for UFP on FR-4) to ensure safe operation under worst-case power and ambient conditions.

Is HZC12TRF-E RoHS compliant and halogen-free?

Yes, HZC12TRF-E complies with the EU RoHS Directive (2011/65/EU) and is halogen-free per J-STD-709. Renesas confirms this status in its environmental compliance documentation, and the device carries the "Green" marking on its laser code. No lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) are present above threshold limits.

HZC12TRF-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HZC12TRF-E FAQ

1.How can I place an order for HZC12TRF-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZC12TRF-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZC12TRF-E reliable?

The price and inventory of HZC12TRF-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZC12TRF-E is usually 5 days.

3.What payment methods are accepted for HZC12TRF-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZC12TRF-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZC12TRF-E?

HZC12TRF-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZC12TRF-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZC12TRF-E?

For technical support, including HZC12TRF-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZC12TRF-E requirements.

6.How does Aetrix verify that HZC12TRF-E is sourced from the original manufacturer or authorized distributors?

All HZC12TRF-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZC12TRF-E meets industry standards.

7.What is the process for return or replacement of HZC12TRF-E?

All HZC12TRF-E units undergo pre-shipment inspection (PSI). If there is an issue with HZC12TRF-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZC12TRF-E part is unused and in its original packaging.

Return procedure for HZC12TRF-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

HZC12TRF-E Tags

  • HZC12TRF-E
  • HZC12TRF-E PDF
  • HZC12TRF-E Datasheet
  • HZC12TRF-E Specifications
  • HZC12TRF-E Images
  • Renesas
  • Renesas HZC12TRF-E
  • Buy HZC12TRF-E
  • HZC12TRF-E Price
  • HZC12TRF-E Distributor
  • HZC12TRF-E Supplier
  • HZC12TRF-E Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER