Renesas HZC3.9TRF-P-E

Overview

HZC3.9TRF-P-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for surge absorption in low-power signal-line protection circuits, featuring a nominal Zener voltage of 3.9 V (3.7–4.1 V), 150 mW power dissipation, and ultra-small UFP (SC-79) surface-mount package with cathode/anode terminals. It operates within −55°C to +150°C storage range and supports ESD robustness up to ±30 kV (HBM).

For engineers reviewing the HZC3.9TRF-P-E datasheet, HZC3.9TRF-P-E pinout, HZC3.9TRF-P-E application, or HZC3.9TRF-P-E equivalent, key selection criteria include Zener voltage tolerance (±5.1%), dynamic resistance (≤130 Ω at 5 mA), thermal coefficient (−0.02 %/°C near 3.9 V), and compatibility with automated SMT assembly on polyimide PCBs.

Technical Context

This Zener diode uses an epitaxial planar junction structure optimized for stable reverse-breakdown behavior under transient overvoltage conditions. Its low dynamic resistance (130 Ω max at I_Z = 5 mA) and tight V_Z tolerance ensure predictable clamping in low-energy surge events.

The device is rated for 150 mW power dissipation at T_a = 25°C, derating linearly above 25°C per Fig.2, and exhibits a negative temperature coefficient of −0.02 %/°C - critical for bias-stable reference or clamp applications where thermal drift must be minimized.

Key Specifications

Pinout & Package

Package: Ultra Small Flat Lead (UFP), JEITA code SC-79, Renesas code PWSF0002ZA-A, dimensions 1.70 × 1.20 × 0.60 mm (L × W × H), mass 0.0016 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode surge absorption applications.

Compared with MMBZ5227BS-7-F and BZX84-C3V9, the HZC3.9TRF-P-E offers identical Zener voltage targeting 3.3 V systems but with the smallest possible SC-79 footprint and verified ±30 kV HBM performance - making it optimal for miniaturized, ESD-critical consumer and IoT endpoints where size and reliability are co-prioritized.

Availability

HZC3.9TRF-P-E is available at Aetrix Electronics and suitable for USB 2.0 interface protection, I²C bus safeguarding, and low-voltage GPIO surge absorption requiring stable component supply across high-mix, low-volume production runs.

Supply support for HZC3.9TRF-P-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.

The HZC Series belongs to Renesas' discrete protection portfolio, engineered specifically for compact, high-reliability surge absorption in space-constrained signal-line applications - emphasizing low leakage, tight V_Z tolerance, and industry-leading ESD resilience.

FAQ

What is the Zener voltage tolerance of HZC3.9TRF-P-E at 5 mA test current?

The HZC3.9TRF-P-E has a Zener voltage range of 3.70 V to 4.10 V at I_Z = 5 mA, corresponding to a ±5.1% tolerance about the nominal 3.9 V value. This specification is guaranteed per Renesas' HZC Series datasheet Rev.2.00 (Jul 2005), and applies directly to the HZC3.9TRF-P-E variant as confirmed by its laser mark "39" and position in the HZC3.9 row of the Electrical Characteristics table.

Does HZC3.9TRF-P-E support automated SMT assembly?

Yes, the HZC3.9TRF-P-E is supplied in tape-and-reel format compatible with standard high-speed pick-and-place equipment. Its UFP (SC-79) package features precise terminal positioning (±0.1 mm tolerance per dimension), flat lead geometry, and 0.0016 g mass - all validated for reliable feeding, placement, and reflow soldering per J-STD-020 moisture sensitivity level 1.

What is the maximum allowable reverse current for HZC3.9TRF-P-E at 1.0 V?

The maximum reverse current I_R for HZC3.9TRF-P-E is 10 µA when reverse-biased at V_R = 1.0 V, as specified in the Electrical Characteristics table. This low leakage ensures minimal power loss and signal distortion in 3.3 V systems where the diode remains fully off during normal operation - a critical parameter for battery-powered HZC3.9TRF-P-E deployments.

Can HZC3.9TRF-P-E be used in place of a 3.3 V rail clamp?

Yes, the HZC3.9TRF-P-E is explicitly designed for clamping 3.3 V logic rails. With a nominal V_Z of 3.9 V and upper limit of 4.1 V, it provides safe headroom above the 3.3 V nominal while triggering before damaging levels (e.g., >5.5 V) are reached. Its 130 Ω dynamic resistance ensures rapid response to transients without excessive overshoot - making HZC3.9TRF-P-E suitable for this role in USB, I²C, and GPIO protection.

What is the ESD rating of HZC3.9TRF-P-E and how is it tested?

The HZC3.9TRF-P-E has an ESD capability of ±30 kV, measured per Human Body Model (HBM) with C = 150 pF and R = 330 Ω, applied in both forward and reverse directions (10 pulses). This rating is documented in the Electrical Characteristics table of the official Renesas HZC Series datasheet (REJ03G1204-0200, Rev.2.00), and confirms HZC3.9TRF-P-E's suitability for end-equipment requiring IEC 61000-4-2 Level 4 immunity.