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Renesas HZK11CTR-S-E

Part No.:
HZK11CTR-S-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixHZK11CTR-S-E.pdf
Description:
DIODE ZENER 0.5W
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:75,000

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Product details

Overview

HZK11CTR-S-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage regulation in stabilized power supplies. It delivers a nominal zener voltage of 10.6 V (midpoint of 10.2–11.1 V range, Grade B), with dynamic resistance of 25 Ω at 5 mA test current, maximum power dissipation of 500 mW, and operates within –55°C to +175°C storage temperature range. It is used in low-power reference circuits for industrial instrumentation and embedded power monitoring.

For engineers reviewing the HZK11CTR-S-E datasheet, HZK11CTR-S-E pinout, HZK11CTR-S-E application, or HZK11CTR-S-E equivalent, key selection criteria include its 10.2–11.1 V zener voltage tolerance (Grade B), 25 Ω dynamic impedance at 5 mA, LLD surface-mount package compatibility, thermal stability up to 175°C junction temperature, and compliance with Renesas' Standard quality grade for industrial equipment.

Technical Context

The HZK11CTR-S-E employs a silicon epitaxial planar structure optimized for low leakage and stable zener breakdown characteristics. Its design targets DC voltage reference applications requiring tight regulation under low-current conditions (IZ = 5 mA) and minimal temperature-induced drift.

It exhibits a zener voltage temperature coefficient of approximately +5.5 mV/°C (typical for ~11 V devices per Fig.2), and maintains ≤1 µA reverse current at VR = 7.5 V - confirming sharp knee behavior and suitability for low-power biasing and sensing circuits.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ)10.2–11.1 V (Grade B, tested at IZ = 5 mA; defines regulation window for precision references)
Dynamic Resistance (rd)25 Ω max (at IZ = 5 mA; ensures minimal output voltage variation under load changes)
Power Dissipation (Pd)500 mW (with PCB; sets thermal limit for continuous operation in compact layouts)
Reverse Current (IR)≤1 µA at VR = 7.5 V (confirms low leakage for high-impedance reference nodes)
Junction Temperature (Tj)175°C max (enables reliable operation in thermally demanding industrial environments)
PackageLLD (leadless, surface-mount; 1.4 mm diameter, 0.027 g mass; supports high-density PCB assembly)

Pinout & Package

Package: LLD - leadless, cylindrical, glass-passivated silicon diode package with cathode band marking. Dimensions: φ1.4 ± 0.1 mm, height ≈ 0.35 mm (typ). Mass: 0.027 g.

Pin/Terminal Circuit Role Design Meaning
1 (Cathode Band)CathodeConnected to regulated output node; polarity-sensitive terminal where zener breakdown occurs
2AnodeConnected to ground or lower-potential rail; completes bias path for reverse conduction

Key Features

Feature Design Value
Low dynamic impedance25 Ω max at 5 mA enables stable regulation under varying load currents in feedback networks
Wide zener voltage spectrumPart of HZK Series covering 1.9–38 V; HZK11CTR-S-E provides 11 V-class reference without custom trimming
High-temperature capability175°C junction rating supports use in enclosed industrial enclosures or near heat-generating components
LLD surface-mount packageCompact 1.4 mm diameter enables high-density placement on space-constrained PCBs and automated high-speed assembly

Applications

Industrial Power Monitoring Embedded Sensor Biasing

Use Scenario: Monitoring 12 V supply rails in programmable logic controllers (PLCs) to detect undervoltage faults.

IC Role / Device Role / Timing Role: Zener diode providing fixed 10.6 V reference for comparator input against scaled rail voltage.

Use Value: Tight 10.2–11.1 V tolerance ensures accurate trip point detection across temperature; 25 Ω rd minimizes error from sensor-divider loading.

Use Scenario: Supplying stable bias voltage to analog front-end op-amps in environmental sensor modules.

IC Role / Device Role / Timing Role: Passive voltage reference establishing common-mode level for differential signal conditioning.

Use Value: ≤1 µA leakage preserves high-impedance node integrity; LLD package allows co-location with sensitive analog circuitry.

Low-Power Reference Circuits Overvoltage Protection Clamping

Use Scenario: Generating precise 10.6 V reference for ADC voltage reference inputs in battery-powered data loggers.

IC Role / Device Role / Timing Role: Primary DC reference source replacing higher-power IC references where quiescent current must be minimized.

Use Value: 500 mW Pd and low leakage enable microamp-level standby operation; Grade B tolerance meets 12-bit ADC accuracy requirements.

Use Scenario: Clamping transient spikes on 12 V communication lines (e.g., RS-485 stubs) to protect transceivers.

IC Role / Device Role / Timing Role: Fast-acting shunt clamp activated above 11.1 V to divert surge energy to ground.

Use Value: Sharp zener knee and 175°C Tj rating allow reliable clamping during repeated surges without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
BZX55C11 (ON Semiconductor)Same nominal VZ (11 V), but ±5% tolerance (10.45–11.55 V); 500 mW rating; DO-35 package (larger than LLD)Requires PCB footprint redesign; higher leakage (≤5 µA at 8.2 V) reduces suitability for ultra-low-power nodesSelect when DO-35 through-hole assembly is preferred or legacy board reuse is required
MMSZ5240B (Diodes Inc.)VZ = 10 V ±5% (9.5–10.5 V); SOD-123 package; 500 mW; rd = 30 Ω max at 20 mANarrower voltage range but higher test current; less suitable for low-current (<5 mA) reference use due to higher rd at low IZSelect for cost-sensitive designs where 10 V nominal suffices and SOD-123 footprint is already standardized

Compared with BZX55C11 and MMSZ5240B, the HZK11CTR-S-E offers tighter Grade B voltage tolerance (10.2–11.1 V), lower dynamic resistance at its specified 5 mA test current, and a smaller LLD package - making it optimal for space-constrained, low-current industrial reference designs requiring thermal robustness.

Availability

HZK11CTR-S-E is available at Aetrix Electronics and suitable for industrial power monitoring, embedded sensor biasing, and low-power reference circuits requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for HZK11CTR-S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The HZK Series was developed by Renesas Electronics as silicon epitaxial planar Zener diodes targeting stabilized power supply applications - emphasizing low leakage, consistent dynamic impedance, and high-temperature reliability for industrial-grade voltage references.

FAQ

What is the exact zener voltage range for HZK11CTR-S-E?

The HZK11CTR-S-E has a guaranteed zener voltage range of 10.2 V to 11.1 V at 5 mA test current, corresponding to Grade B specification per the Renesas HZK Series datasheet Rev.3.00. This range reflects manufacturing tolerance and ensures predictable regulation behavior in production circuits using the HZK11CTR-S-E.

Is HZK11CTR-S-E compatible with reflow soldering processes?

Yes, the HZK11CTR-S-E uses the LLD package, which is qualified for standard Pb-free reflow soldering profiles per J-STD-020. Its glass-passivated construction and 175°C maximum junction temperature support compatibility with typical peak reflow temperatures up to 260°C, making the HZK11CTR-S-E suitable for automated SMT assembly lines.

What is the maximum reverse current specification for HZK11CTR-S-E?

The HZK11CTR-S-E specifies a maximum reverse current (IR) of 1 µA when measured at VR = 7.5 V, per the Electrical Characteristics table on page 3 of the Renesas datasheet. This low leakage supports high-impedance reference node stability and is a confirmed parameter for the HZK11CTR-S-E.

Does HZK11CTR-S-E have a defined temperature coefficient?

While the HZK11CTR-S-E datasheet does not list a discrete temperature coefficient value for this specific variant, Figure 2 shows that 11 V-class HZK devices exhibit a typical zener voltage temperature coefficient of approximately +5.5 mV/°C. This behavior is inherent to the silicon epitaxial planar structure and applies directly to the HZK11CTR-S-E.

What quality grade is assigned to HZK11CTR-S-E?

The HZK11CTR-S-E is classified as a "Standard" quality grade device per Renesas Electronics' product grading system, as no alternate grade is specified in its datasheet. This qualifies the HZK11CTR-S-E for use in industrial robots, office equipment, communications gear, and other non-safety-critical applications outlined in the Renesas documentation.

HZK11CTR-S-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HZK11CTR-S-E FAQ

1.How can I place an order for HZK11CTR-S-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZK11CTR-S-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZK11CTR-S-E reliable?

The price and inventory of HZK11CTR-S-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZK11CTR-S-E is usually 5 days.

3.What payment methods are accepted for HZK11CTR-S-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZK11CTR-S-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZK11CTR-S-E?

HZK11CTR-S-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZK11CTR-S-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZK11CTR-S-E?

For technical support, including HZK11CTR-S-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZK11CTR-S-E requirements.

6.How does Aetrix verify that HZK11CTR-S-E is sourced from the original manufacturer or authorized distributors?

All HZK11CTR-S-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZK11CTR-S-E meets industry standards.

7.What is the process for return or replacement of HZK11CTR-S-E?

All HZK11CTR-S-E units undergo pre-shipment inspection (PSI). If there is an issue with HZK11CTR-S-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZK11CTR-S-E part is unused and in its original packaging.

Return procedure for HZK11CTR-S-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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