Renesas HZK16TR-S-E

Overview

HZK16TR-S-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for voltage regulation and stabilization in low-power supply circuits. It delivers a nominal zener voltage of 16 V (min 15.3 V, max 17.1 V), with dynamic resistance of 45 Ω at 5 mA, maximum power dissipation of 500 mW, and reverse leakage current ≤1 µA at 12 V - deployed in precision reference and overvoltage protection applications.

For engineers reviewing the HZK16TR-S-E datasheet, HZK16TR-S-E pinout, HZK16TR-S-E application, or HZK16TR-S-E equivalent, key selection criteria include verified zener voltage tolerance (±5.6% at 16 V), low-temperature coefficient (≈+8.5 mV/°C), LLD surface-mount package compatibility, and compliance with Renesas Standard-grade reliability for industrial and consumer power rails.

Technical Context

The HZK16TR-S-E operates as a two-terminal voltage reference device using silicon epitaxial planar junction technology. Its zener breakdown mechanism is optimized for stable DC regulation at 5 mA test current, with dynamic resistance measured under DC conditions and specified across the full operating temperature range (–55°C to +175°C).

Junction temperature is rated to 175°C, and thermal derating follows a linear 5.0 mW/°C reduction above 25°C ambient - confirmed by the power dissipation vs. ambient temperature curve in the official datasheet. The device exhibits positive temperature coefficient behavior typical of zeners above ~5 V, with γz ≈ +8.5 mV/°C near 16 V.

Key Specifications

Pinout & Package

Package: LLD (leadless diode package), circular ceramic body with cathode band marking; dimensions: φ1.4 ± 0.1 mm, height ≈ 0.35 mm (typical); mass: 0.027 g; JEDEC/JEITA unregistered.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar zener diode applications.

Compared with BZX55C16 and MMSZ5245B, the HZK16TR-S-E provides tighter voltage spread (±5.6% vs. ±5%), smallest PCB footprint (LLD φ1.4 mm), and Renesas Standard-grade qualification for office and industrial equipment - making it optimal where miniaturization and supply chain continuity are critical.

Availability

HZK16TR-S-E is available at Aetrix Electronics and suitable for industrial power monitoring, consumer audio DC reference, medical sensor signal conditioning, and office equipment power sequencing requiring stable component supply and long-term manufacturability.

Supply support for HZK16TR-S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and consumer markets.

The HZK Series was developed by Renesas as a family of precision silicon Zener diodes targeting stabilized DC power supply design - emphasizing low leakage, tight voltage tolerance, and high-reliability surface-mount packaging for cost-sensitive, high-volume applications.

FAQ

What is the exact zener voltage range for HZK16TR-S-E at 5 mA test current?

The HZK16TR-S-E has a guaranteed zener voltage range of 15.3 V to 17.1 V when tested at I_Z = 5 mA and T_a = 25°C, per the Renesas HZK Series datasheet Rev.3.00. This ±5.6% tolerance reflects the device's grade-specific specification and is validated during production testing. The HZK16TR-S-E does not carry an A/B/C suffix, indicating it meets the base HZK16 specification without further grading.

Is HZK16TR-S-E RoHS compliant and halogen-free?

Yes, HZK16TR-S-E complies with the EU RoHS Directive (2011/65/EU) and is halogen-free, as confirmed by Renesas' environmental compliance documentation. The LLD package uses lead-free terminations and glass-epoxy compatible materials. Renesas requires adherence to all applicable environmental regulations, and the HZK16TR-S-E is designated for Standard-grade applications including office equipment and consumer electronics.

What is the thermal derating behavior of HZK16TR-S-E above 25°C ambient?

The HZK16TR-S-E follows linear thermal derating: power dissipation decreases by 5.0 mW per °C above 25°C ambient, down to zero at 125°C case temperature. This is derived from the "Power Dissipation vs. Ambient Temperature" curve on page 5 of the datasheet. At 75°C ambient, the usable P_d is reduced to 250 mW - a critical constraint for enclosed or poorly ventilated HZK16TR-S-E deployments.

Does HZK16TR-S-E have a specified temperature coefficient, and how does it affect regulation accuracy?

Yes, the HZK16TR-S-E exhibits a positive temperature coefficient of approximately +8.5 mV/°C near its 16 V operating point, as shown in Figure 2 of the datasheet. This means its zener voltage increases by ~0.053% per °C rise - resulting in a +0.85 V shift over a 100°C range. Designers must account for this in precision references; the HZK16TR-S-E is best suited for applications where ±1% total voltage drift is acceptable.

Can HZK16TR-S-E be used in place of HZK16 without modification?

Yes, HZK16TR-S-E is a direct variant of the base HZK16 part, sharing identical electrical specifications, LLD package, and pinout. The "TR-S-E" suffix denotes tape-and-reel packaging (TR), standard-grade reliability (S), and RoHS-compliant processing (E). No circuit or layout changes are required when substituting HZK16TR-S-E for HZK16 in existing designs.