Renesas HZK22LTL-S-E

Overview

HZK22LTL-S-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for voltage regulation and stabilization in low-power DC supply rails. It delivers a nominal zener voltage of 22 V (min 20.9 V, max 23.3 V) at 2 mA test current, with dynamic resistance of 65 Ω, maximum power dissipation of 500 mW, and operates within −55°C to +175°C storage temperature range. It is used in precision reference circuits and feedback loops of linear regulators.

For engineers reviewing the HZK22LTL-S-E datasheet, HZK22LTL-S-E pinout, HZK22LTL-S-E application, or HZK22LTL-S-E equivalent, key selection criteria include zener voltage tolerance (±5.0% at 22 V), low leakage (<1 µA at VR = 17 V), thermal coefficient (≈+4.5 mV/°C), LLD surface-mount package compatibility, and compliance with Renesas Standard quality grade for industrial and consumer equipment.

Technical Context

The HZK22LTL-S-E employs a silicon epitaxial planar junction structure optimized for stable reverse-breakdown behavior under DC bias. Its zener voltage is specified at IZ = 2 mA, with dynamic resistance measured at the same current - critical for maintaining regulation accuracy under varying load conditions.

It exhibits a positive temperature coefficient (~+4.5 mV/°C) typical of higher-voltage Zener diodes (>10 V), enabling predictable drift compensation in reference designs. The device is rated for junction temperatures up to 175°C and requires no derating below 25°C ambient per its power dissipation curve.

Key Specifications

Pinout & Package

The HZK22LTL-S-E uses the LLD package: a compact, leadless, surface-mount diode package with two terminals. Dimensions are 1.4 mm diameter × 3.5 mm length (±0.1 mm), mass ≈ 0.027 g. Cathode is marked by a visible band.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with 1N4747A and BZX55C22, the HZK22LTL-S-E offers identical voltage specification and power rating but delivers superior manufacturability via its LLD surface-mount form factor, tighter process control for leakage performance, and Renesas Standard-grade qualification for industrial equipment.

Availability

HZK22LTL-S-E is available at Aetrix Electronics and suitable for industrial power monitoring, consumer audio reference design, automotive body control module protection, and medical diagnostic instrument supply requiring stable component supply and traceable sourcing.

Supply support for HZK22LTL-S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The HZK Series is part of Renesas' discrete Zener diode portfolio, engineered for stable voltage reference and shunt regulation in cost-sensitive, high-volume industrial and consumer applications.

FAQ

What is the zener voltage tolerance of HZK22LTL-S-E?

The HZK22LTL-S-E has a zener voltage range of 20.9 V to 23.3 V at I_Z = 2 mA, corresponding to a ±5.0% tolerance around the nominal 22 V rating. This tolerance is verified per Renesas' HZK Series datasheet Rev.3.00 and applies across the full operating temperature range of −55°C to +175°C. The HZK22LTL-S-E does not specify tighter binning grades beyond this standard tolerance.

Is HZK22LTL-S-E RoHS compliant?

Yes, the HZK22LTL-S-E complies with the EU RoHS Directive as confirmed by Renesas Electronics' environmental compliance documentation. It contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) above threshold limits. The LLD package uses lead-free terminations suitable for standard Pb-free reflow profiles.

What is the maximum reverse leakage current for HZK22LTL-S-E?

The maximum reverse leakage current (I_R) for HZK22LTL-S-E is less than 1 µA when tested at V_R = 17 V and T_a = 25°C. This low leakage ensures minimal parasitic current draw in high-impedance reference circuits and preserves accuracy in battery-powered applications. The HZK22LTL-S-E maintains this specification across its full storage temperature range.

Can HZK22LTL-S-E be used in place of HZK22B or HZK22C?

No - HZK22LTL-S-E is a distinct variant with LLD packaging and specific marking (Light Blue/Yellow/Pink bands), whereas HZK22B and HZK22C use different packages and band coding. While all share the same 22 V zener voltage range, the HZK22LTL-S-E is not a drop-in replacement due to mechanical and marking differences. Always verify package dimensions and assembly requirements before substitution.

What is the thermal resistance (R_θJA) of HZK22LTL-S-E?

Renesas does not publish a specific R_θJA value for the HZK22LTL-S-E in the HZK Series datasheet. Instead, the device provides a derating curve showing power dissipation vs. ambient temperature on page 5. At T_a = 25°C, P_d = 500 mW; it linearly reduces to zero at ~150°C. Designers must use the provided curve-not a fixed R_θJA-to calculate safe operating area for the HZK22LTL-S-E.